3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2771T GAIN vs. FREQUENCY AND TEMPERATURE • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical 24 • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz 22 • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE Gain, GS (dB) • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum TA = -40˚ C +85˚ C 20 TA = +25˚ C TA = +85˚ C 18 +25˚ C -40˚ C 16 DESCRIPTION VCC = 3.0 V The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt supply, this IC is ideally suited for hand-held, portable designs. 14 0.1 0.3 1.0 3.0 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, VCC = 3.0 V) SYMBOLS PART NUMBER UPC2771T PACKAGE OUTLINE T06 PARAMETERS AND CONDITIONS ICC Circuit Current (no signal) GS Small Signal Gain, fU UNITS MIN mA f = 900 MHz f = 1500 MHz dB dB 19 17 TYP 45 21 20 24 23 Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz) GHz 1.7 2.1 P1dB 1 dB Compressed Output Power, f = 900 MHz f = 1500 MHz dBm dBm +9 +7 +11.5 +9.5 PSAT Saturated Output Power, f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz dBm dBm dB dB Input Return Loss, f = 900 MHz f = 1500 MHz dB dB 10 10 14 14 RLOUT Output Return Loss, f = 900 MHz f = 1500 MHz dB dB 6.5 5.5 9.5 8.5 ISOL Isolation, f = 900 MHz f = 1500 MHz dB dB 25 25 30 30 OIP3 SSB OutputThird Order Intercept Point f = 900, 902 MHz f = 1500, 1502 MHz NF RLIN Noise Figure, dBm dBm MAX 36 +12.5 +11 6 6 7.5 7.5 +16 +13 California Eastern Laboratories UPC2771T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS UNITS RATINGS VCC ICC Supply Voltage Total Supply Current PARAMETERS V mA 3.6 77.7 PIN Input Power dBm +13 PT Total Power Dissipation2 mW 280 TOP Operating Temperature °C -40 to +85 TSTG Storage Temperature °C -55 to +150 TEST CIRCUIT VCC 1000 pF L* 6 50 Ω IN 1 50 Ω OUT 4 1000 pF Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 X 50 X 1.6 mm epoxy glass PWB (TA = 85°C). 1000 pF 2, 3, 5 RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX VCC Supply Voltage V 2.7 3 3.3 TOP Operating Temperature °C -40 +25 +85 * This device is tested using a bias tee with typical series inductance, L = 1000 nH. In circuit applications, L = 50 nH is satisfactory at 900 MHz, and L = 10 nH is satisfactory at 1500 MHz. TYPICAL PERFORMANCE CURVES (TA = 25°C) CIRCUIT CURRENT vs. TEMPERATURE 50 40 40 Circuit Current, ICC (mA) Circuit Current, ICC (mA) CIRCUIT CURRENT vs. VOLTAGE 50 30 20 10 30 20 10 0 0 0 1 2 3 -60 4 -40 -20 0 Supply Voltage, VCC (V) 20 40 60 80 100 Temperature (°C) INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE 0 24 VCC = 2.7V VCC = 3.3V VCC = 3.0V VCC = 3.0V 22 20 18 16 VCC = 2.7 V 14 7 VCC = 3.3 V VCC = 3.0 V 12 5 10 NF VCC = 2.7 V 8 3 6 0.1 0.3 1.0 Frequency, f (GHz) 3.0 Return Loss (dB) -10 VCC = 3.0 V Noise Figure, NF (dB) Gain, GS (dB) RLout GS VCC = 3.3V RLin -20 -30 -40 0.1 0.3 1.0 Frequency, f (GHz) 3.0 UPC2771T TYPICAL PERFORMANCE CURVES (TA = 25°) OUTPUT POWER vs. INPUT POWER AND VOLTAGE ISOLATION vs. FREQUENCY 0 15 VCC = 3.3 V VCC = 3.0V f = 900 MHz Output Power, POUT (dBm) -20 -30 -40 10 VCC = 2.7 V VCC = 3.0 V 5 0 -5 -50 0.1 0.3 1.0 -25 3.0 Frequency, f (GHz) -15 -10 -5 0 SATURATED OUTPUT POWER vs. FREQUENCY AND TEMPERATURE Pin = -3 dBm 15 VCC = 3.3 V 13 VCC = 3.0 V VCC = 2.7 V 9 7 5 Saturated Output Power, PO(SAT), (dBm) 17 11 -20 Input Power, PIN (dBm) SATURATED OUTPUT POWER vs. FREQUENCY AND VOLTAGE Saturated Output Power, PO(SAT), (dBm) Isolation, ISOL (dB) -10 17 Pin = -3 dBm 15 TA = +85˚C 13 TA = +25˚C 11 TA = -40˚C 9 7 5 0.1 0.3 1.0 Frequency, f (GHz) S11 vs. FREQUENCY (VCC = 3.0 V) 3.0 0.1 0.3 1.0 Frequency, f (GHz) S22 vs. FREQUENCY (VCC = 3.0 V) 0.9 GHz 0.1 1.5 GHz 1.9 GHz 1.9 GHz 0.1 GHz 0.9 GHz 1.5 GHz 3.0 UPC2771T OUTLINE DIMENSIONS LEAD CONNECTIONS (Units in mm) UPC2771T PACKAGE OUTLINE T06 (Top View) (Bottom View) +0.2 2.8 -0.3 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 C2H 3 2 1 +0.2 1.1 -0.1 4 3 5 5 2 6 6 1 -0.05 0.3 +0.10 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC 0.13±0.1 0.8 4 0 to 0.1 RECOMMENDED P.C.B. LAYOUT (Units in mm) EQUIVALENT CIRCUIT 3.10 VCC 3 4 2 0.95 5 1 OUT IN 6 0.5 MIN 1.0 MIN 1.0 MIN Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER QTY UPC2771T-E3 3K/Reel Note: Embossed Tape, 8 mm wide. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC DATA SUBJECT TO CHANGE WITHOUT NOTICE · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279 PRINTED IN USA ON RECYCLED PAPER 11/95