NEC UPC2771T-E3

3V, 2400 MHz
MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
UPC2771T
GAIN vs. FREQUENCY AND TEMPERATURE
• HIGH GAIN: 20 dB at 900 to 1500 MHz Typical
24
• HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz
+11 dBm at 1500 MHz
22
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
Gain, GS (dB)
• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum
TA = -40˚ C
+85˚ C
20
TA = +25˚ C
TA = +85˚ C
18
+25˚ C
-40˚ C
16
DESCRIPTION
VCC = 3.0 V
The UPC2771T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This amplifier was designed as a driver amplifier for digital
cellular applications. Operating on a 3 volt supply, this IC is
ideally suited for hand-held, portable designs.
14
0.1
0.3
1.0
3.0
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, VCC = 3.0 V)
SYMBOLS
PART NUMBER
UPC2771T
PACKAGE OUTLINE
T06
PARAMETERS AND CONDITIONS
ICC
Circuit Current (no signal)
GS
Small Signal Gain,
fU
UNITS
MIN
mA
f = 900 MHz
f = 1500 MHz
dB
dB
19
17
TYP
45
21
20
24
23
Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz)
GHz
1.7
2.1
P1dB
1 dB Compressed Output Power,
f = 900 MHz
f = 1500 MHz
dBm
dBm
+9
+7
+11.5
+9.5
PSAT
Saturated Output Power,
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
dBm
dBm
dB
dB
Input Return Loss,
f = 900 MHz
f = 1500 MHz
dB
dB
10
10
14
14
RLOUT
Output Return Loss,
f = 900 MHz
f = 1500 MHz
dB
dB
6.5
5.5
9.5
8.5
ISOL
Isolation,
f = 900 MHz
f = 1500 MHz
dB
dB
25
25
30
30
OIP3
SSB OutputThird Order Intercept Point
f = 900, 902 MHz
f = 1500, 1502 MHz
NF
RLIN
Noise Figure,
dBm
dBm
MAX
36
+12.5
+11
6
6
7.5
7.5
+16
+13
California Eastern Laboratories
UPC2771T
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
UNITS
RATINGS
VCC
ICC
Supply Voltage
Total Supply Current
PARAMETERS
V
mA
3.6
77.7
PIN
Input Power
dBm
+13
PT
Total Power Dissipation2
mW
280
TOP
Operating Temperature
°C
-40 to +85
TSTG
Storage Temperature
°C
-55 to +150
TEST CIRCUIT
VCC
1000 pF
L*
6
50 Ω
IN
1
50 Ω
OUT
4
1000 pF
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on a 50 X 50 X 1.6 mm epoxy glass PWB (TA = 85°C).
1000 pF
2, 3, 5
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
UNITS MIN
TYP MAX
VCC
Supply Voltage
V
2.7
3
3.3
TOP
Operating Temperature
°C
-40
+25
+85
* This device is tested using a bias tee with typical series inductance,
L = 1000 nH. In circuit applications, L = 50 nH is satisfactory at 900
MHz, and L = 10 nH is satisfactory at 1500 MHz.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. TEMPERATURE
50
40
40
Circuit Current, ICC (mA)
Circuit Current, ICC (mA)
CIRCUIT CURRENT vs. VOLTAGE
50
30
20
10
30
20
10
0
0
0
1
2
3
-60
4
-40
-20
0
Supply Voltage, VCC (V)
20
40
60
80
100
Temperature (°C)
INPUT RETURN LOSS AND
OUTPUT RETURN LOSS vs. FREQUENCY
GAIN AND NOISE FIGURE
vs. FREQUENCY AND VOLTAGE
0
24
VCC = 2.7V
VCC = 3.3V
VCC = 3.0V
VCC = 3.0V
22
20
18
16
VCC = 2.7 V
14
7
VCC = 3.3 V
VCC = 3.0 V
12
5
10
NF
VCC = 2.7 V
8
3
6
0.1
0.3
1.0
Frequency, f (GHz)
3.0
Return Loss (dB)
-10
VCC = 3.0 V
Noise Figure, NF (dB)
Gain, GS (dB)
RLout
GS
VCC = 3.3V
RLin
-20
-30
-40
0.1
0.3
1.0
Frequency, f (GHz)
3.0
UPC2771T
TYPICAL PERFORMANCE CURVES (TA = 25°)
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
ISOLATION vs. FREQUENCY
0
15
VCC = 3.3 V
VCC = 3.0V
f = 900 MHz
Output Power, POUT (dBm)
-20
-30
-40
10
VCC = 2.7 V
VCC = 3.0 V
5
0
-5
-50
0.1
0.3
1.0
-25
3.0
Frequency, f (GHz)
-15
-10
-5
0
SATURATED OUTPUT POWER vs.
FREQUENCY AND TEMPERATURE
Pin = -3 dBm
15
VCC = 3.3 V
13
VCC = 3.0 V
VCC = 2.7 V
9
7
5
Saturated Output Power, PO(SAT), (dBm)
17
11
-20
Input Power, PIN (dBm)
SATURATED OUTPUT POWER vs.
FREQUENCY AND VOLTAGE
Saturated Output Power, PO(SAT), (dBm)
Isolation, ISOL (dB)
-10
17
Pin = -3 dBm
15
TA = +85˚C
13
TA = +25˚C
11
TA = -40˚C
9
7
5
0.1
0.3
1.0
Frequency, f (GHz)
S11 vs. FREQUENCY
(VCC = 3.0 V)
3.0
0.1
0.3
1.0
Frequency, f (GHz)
S22 vs. FREQUENCY
(VCC = 3.0 V)
0.9 GHz
0.1
1.5 GHz
1.9 GHz
1.9 GHz
0.1 GHz
0.9 GHz
1.5 GHz
3.0
UPC2771T
OUTLINE DIMENSIONS
LEAD CONNECTIONS
(Units in mm)
UPC2771T
PACKAGE OUTLINE T06
(Top View)
(Bottom View)
+0.2
2.8 -0.3
+0.2
1.5 -0.1
3
0.95
4
1.9±0.2 2
0.95
5
1
6
2.9±0.2
C2H
3
2
1
+0.2
1.1 -0.1
4
3
5
5
2
6
6
1
-0.05
0.3 +0.10
1. INPUT
2. GND
3. GND
4. OUTPUT
5. GND
6. VCC
0.13±0.1
0.8
4
0 to 0.1
RECOMMENDED P.C.B. LAYOUT (Units in mm)
EQUIVALENT CIRCUIT
3.10
VCC
3
4
2
0.95
5
1
OUT
IN
6 0.5 MIN
1.0
MIN
1.0
MIN
Note:
All dimensions are typical unless otherwise specified.
ORDERING INFORMATION
PART NUMBER
QTY
UPC2771T-E3
3K/Reel
Note:
Embossed Tape, 8 mm wide.
EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
DATA SUBJECT TO CHANGE WITHOUT NOTICE
· Headquarters · 4590 Patrick Henry Drive ·
Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279
PRINTED IN USA ON RECYCLED PAPER 11/95