WF5027 series Crystal Oscillator Module ICs OVERVIEW The WF5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with existing devices, and significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators. FEATURES ■ ■ ■ ■ ■ Wide range of operating supply voltage: 1.60 to 3.63V Regulated voltage drive oscillator circuit for reduced power consumption and crystal drive current Optimized low crystal drive current oscillation for miniature crystal units 3 pad layout options for mounting • 5027A×, M×, Q× series: for Flip Chip Bonding • 5027B×, N×, R× series: for Wire Bonding (type I) • 5027C×, P×, S× series: for Wire Bonding (type II) Recommended oscillation frequency range For fundamental oscillator • Low frequency version: 20MHz to 60MHz • High frequency version: 60MHz to 100MHz For 3rd overtone oscillator • Low frequency version: 40MHz to 110MHz • High frequency version*1: 110MHz to 180MHz ■ ■ ■ ■ ■ ■ ■ ■ Multi-stage frequency divider for low-frequency output support: 0.9MHz (min) Frequency divider built-in (for fundamental oscillator) • Selectable by version: fO, fO/2, fO/4, fO/8, fO/16, fO/32, fO/64 −40 to 85°C operating temperature range Standby function • High impedance in standby mode, oscillator stops CMOS output duty level (1/2VDD) 50 ± 5% output duty 15pF output drive capability Wafer form (WF5027××) Chip form (CF5027××) *1: under development APPLICATIONS ■ 3.2 × 2.5, 2.5 × 2.0, 2.0 × 1.6 size miniature crystal oscillator modules ORDERING INFORMATION Device Package WF5027××–4 Wafer form CF5027××–4 Chip form SEIKO NPC CORPORATION —1 WF5027 series SERIES CONFIGURATION For Fundamental Oscillator Operating Output drive supply capability voltage range [mA] [V] PAD layout Flip Chip Bonding 1.60 to 3.63 ±4 Wire Bonding Type I Wire Bonding Type II Version*2 Recommended oscillation frequency range*1 [MHz] fO output fO/2 output fO/4 output fO/8 output fO/16 output fO/32 output fO/64 output 20 to 60 5027A1 5027A2 5027A3 5027A4 5027A5 5027A6 5027A7 60 to 100 5027AP 5027AQ 5027AR 5027AS 5027AT 5027AV 5027AW 20 to 60 5027B1 5027B2 5027B3 5027B4 5027B5 5027B6 5027B7 60 to 100 5027BP 5027BQ 5027BR 5027BS 5027BT 5027BV 5027BW 20 to 60 5027C1 5027C2 5027C3 5027C4 5027C5 5027C6 5027C7 60 to 100 5027CP 5027CQ 5027CR 5027CS 5027CT 5027CV 5027CW *1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××. For 3rd Overtone Oscillator Operating Output drive supply capability voltage range [mA] [V] 1.60 to 3.63 ±8 Recommended oscillation frequency range*1 [MHz] and version*2 PAD layout 40 to 50 50 to 65 65 to 85 85 to 110 110 to 145 145 to 180 Flip Chip Bonding 5027MA 5027MB 5027MC 5027MD (5027QE) (5027QF) Wire Bonding Type I 5027NA 5027NB 5027NC 5027ND (5027RE) (5027RF) Wire Bonding Type II 5027PA 5027PB 5027PC 5027PD (5027SE) (5027SF) *1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××. Versions in parentheses ( ) are under development. VERSION NAME Device Package WF5027××–4 Wafer form Version name WF5027 Form WF: Wafer form CF: Chip (Die) form CF5027××–4 Chip form −4 Oscillation frequency range, frequency divider function Pad layout type A, M, Q: for Flip Chip Bonding B, N, R: for Wire Bonding (type I) C, P, S: for Wire Bonding (type II) SEIKO NPC CORPORATION —2 WF5027 series PAD LAYOUT (Unit: µm) ■ 5027A×, M×, Q× (for Flip Chip Bonding) ■ 5027B×, N×, R× (for Wire Bonding (type I)) (750,690) VSS 5 4 Q Y INHN 6 3 VDD (0,0) 1 2 XT XTN ■ 5027C×, P×, S× (for Wire Bonding (type II)) (750,690) Y Q 5 4 VSS VDD 6 3 INHN (0,0) 1 2 XTN XT (750,690) VDD 5 4 Q Y INHN 6 3 VSS (0,0) 1 2 XT XTN X X X Chip size: 0.75 × 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: VSS level Chip size: 0.75 × 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: VSS level Chip size: 0.75 × 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: VSS level PAD DIMENSIONS PIN DESCRIPTION Pad dimensions [µm] Pad No. Pad No. 5027A× 5027B× 5027C× 5027M× 5027N× 5027P× 5027Q× 5027R× 5027S× Pin Name Description X Y 1 229 114 1 2 1 XT Amplifier input 2 520 114 2 1 2 XTN Amplifier output Crystal connection pins. Crystal is connected between XT and XTN. 3 636 304 3 6 5 VDD (+) supply voltage – 4 636 531 4 5 4 Q Output Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32, fO/64 5 114 531 5 4 3 VSS (–) ground – 6 114 304 6 3 6 INHN Output state control input High impedance when LOW (oscillator stops). Power-saving pull-up resistor built-in. BLOCK DIAGRAM VDD VSS INHN VRG RF DIVIDER CMOS Q XT RD CG CD XTN SEIKO NPC CORPORATION —3 WF5027 series VERSION DISCRIMINATION INTERNAL COMPONENTS The WF5027 series device version is not determined solely by the mask pattern, but can also be determined by the trimming of internal trimming fuses. ■ Version determined by laser trimming: These chips are produced from a common device by the laser trimming of fuses corresponding to the ordered version, shown in table 1. These devices are shipped for electrical characteristics testing. Laser-trimmed versions are identified externally by the combination of the version name marking (1) and the locations of trimmed fuses (2). ■ Version determined by mask pattern: These chips are fabricated using the mask corresponding to the ordered version, and do not require trimming. Mask-fabricated versions are identified externally by the version name marking (1) only. Since the WF5027 series devices are manufactured using 2 methods, there are 2 types of IC chip available (identified externally) for the same version name. The identification markings for all WF5027 series device versions is shown in table 2. (750,690) 5027 (1) Version code on die NPC (2) Trimming fuses F1 F2 F3 F4 F5 F6 F7 F8 F9 SEIKO NPC CORPORATION —4 WF5027 series Table 1. Version and trimming fuses (for fundamental oscillator) ■ 5027×1 trimming fuses (untrimmed) ■ 5027×2 trimming fuses (F1 link trimmed) ■ 5027×3 trimming fuses (F2 link trimmed) ■ 5027×4 trimming fuses (F1 and F2 links trimmed) Trimming fuse number*1 Version F1 F2 F3 F4 F5 5027×1 – – – – – 5027×2 × – – – – 5027×3 – × – – – 5027×4 × × – – – 5027×5 – – × – – 5027×6 × – × – – 5027×7 – × × – – 5027×P – – – × × 5027×Q × – – × × 5027×R – × – × × 5027×S × × – × × 5027×T – – × × × 5027×V × – × × × 5027×W – × × × × *1. –: untrimmed, ×: trimmed, F6 to F9 not used : trimmed device Table 2. Version and trimming fuses (for 3rd overtone oscillator) Trimming fuse number*2 Recommended oscillation frequency range*1 [MHz] F1 F2 F3 F4 F5 F6 F7 F8 F9 5027×A 40 to 50 – – – – – – × × × 5027×B 50 to 65 – × – – – – – × × 5027×C 65 to 85 × × – – × – × – × 5027×D 85 to 110 – × × × × – × – × 5027×E (110 to 145) 5027×F (145 to 180) Version TBD *1. Values in parentheses ( ) are provisional only. *2. –: untrimmed, ×: trimmed SEIKO NPC CORPORATION —5 WF5027 series Table 3. Version identification by version name and chip markings (for fundamental oscillator) Version set by trimming fuses Version name Version code on chip Version set by mask pattern Trimming fuses*1 F6 F7 F8 F9 Version code on chip F1 F2 F3 F4 F5 5027A1 AX − − − − − AX 5027A2 AX × − − − − A2 5027A3 AX − × − − − A3 5027A4 AX × × − − − A4 5027A5 AX − − × − − A5 5027A6 AX × − × − − A6 5027A7 AX − × × − − A7 5027AP AX − − − × × AP 5027AQ AX × − − × × AQ 5027AR AX − × − × × AR 5027AS AX × × − × × AS 5027AT AX − − × × × AT 5027AV AX × − × × × AV 5027AW AX − × × × × AW 5027B1 BX − − − − − BX 5027B2 BX × − − − − B2 5027B3 BX − × − − − B3 5027B4 BX × × − − − B4 5027B5 BX − − × − − B5 5027B6 BX × − × − − B6 5027B7 BX − × × − − 5027BP BX − − − × × 5027BQ BX × − − × × BQ 5027BR BX − × − × × BR 5027BS BX × × − × × BS Untrimmed B7 BP 5027BT BX − − × × × BT 5027BV BX × − × × × BV 5027BW BX − × × × × BW 5027C1 CX − − − − − CX 5027C2 CX × − − − − C2 5027C3 CX − × − − − C3 5027C4 CX × × − − − C4 5027C5 CX − − × − − C5 5027C6 CX × − × − − C6 5027C7 CX − × × − − C7 5027CP CX − − − × × CP 5027CQ CX × − − × × CQ 5027CR CX − × − × × CR 5027CS CX × × − × × CS 5027CT CX − − × × × CT 5027CV CX × − × × × CV 5027CW CX − × × × × CW Trimming fuses F1 to F9 Untrimmed *1. −: untrimmed, ×: trimmed SEIKO NPC CORPORATION —6 WF5027 series Table 4. Version identification by version name and chip markings (for 3rd overtone oscillator) Version set by trimming fuses Version name Version set by mask pattern Trimming fuses*1 Version code on chip Version code on chip F1 F2 F3 F4 F5 F6 F7 F8 F9 Trimming fuses F1 to F9 5027MA MX − − − − − − × × × MA 5027MB MX − × − − − − − × × MB 5027MC MX × × − − × − × − × MC 5027MD MX − × × × × − × − × MD 5027NA NX − − − − − − × × × NA 5027NB NX − × − − − − − × × NB 5027NC NX × × − − × − × − × NC 5027ND NX − × × × × − × − × ND 5027PA PX − − − − − − × × × PA 5027PB PX − × − − − − − × × PB 5027PC PX × × − − × − × − × PC 5027PD PX − × × × × − × − × PD Untrimmed (5027QE) (5027QF) (5027RE) (5027RF) TBD (5027SE) (5027SF) *1. −: untrimmed, ×: trimmed SEIKO NPC CORPORATION —7 WF5027 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Parameter Symbol Condition Rating Unit −0.5 to +4.0 V Supply voltage range VDD Between VDD and VSS Input voltage range VIN Input pins −0.5 to VDD + 0.5 V Output voltage range VOUT Output pins −0.5 to VDD + 0.5 V Storage temperature range TSTG Wafer form −65 to +150 °C Output current IOUT Q pin ± 20 mA Recommended Operating Conditions For Fundamental Oscillator VSS = 0V Rating Parameter Symbol Condition Unit min typ max Operating supply voltage VDD CL ≤ 15pF 1.60 – 3.63 V Input voltage VIN Input pins VSS – VDD V −40 – +85 °C 5027×1 to 5027×7 20 – 60 MHz 5027×P to 5027×W 60 – 100 MHz 5027×1 to 5027×7 0.9 – 60 MHz 5027×P to 5027×W 0.9 – 100 MHz Operating temperature TOPR Oscillation frequency*1 fO Output frequency fOUT CL ≤ 15pF *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. For 3rd Overtone Oscillator VSS = 0V Rating Parameter Symbol Condition Unit min typ max Operating supply voltage VDD CL ≤ 15pF 1.60 – 3.63 V Input voltage VIN Input pins VSS – VDD V −40 – +85 °C 5027×A 40 – 50 MHz 5027×B 50 – 65 MHz 5027×C 65 – 85 MHz 5027×D 85 – 110 MHz Operating temperature Oscillation frequency*1 TOPR fO *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. SEIKO NPC CORPORATION —8 WF5027 series Electrical Characteristics DC Characteristics For Fundamental Oscillator: Low frequency version (5027×1 to 5027×7) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max VDD – 0.4 – – V – – 0.4 V HIGH-level output voltage VOH Q: Measurement cct 3, IOH = – 4mA LOW-level output voltage VOL Q: Measurement cct 3, IOL = 4mA HIGH-level input voltage VIH INHN, Measurement cct 4 0.7VDD – – V LOW-level input voltage VIL INHN, Measurement cct 4 – – 0.3VDD V VOH = VDD – 10 µA IZ Q: Measurement cct 5, INHN = LOW – Output leakage current VOL = VSS – 10 – – µA VDD = 3.3V – 1.6 2.4 mA VDD = 2.5V – 1.3 2.0 mA VDD = 1.8V – 1.0 1.5 mA VDD = 3.3V – 1.5 2.3 mA VDD = 2.5V – 1.2 1.8 mA VDD = 1.8V – 0.9 1.4 mA VDD = 3.3V – 1.3 2.0 mA VDD = 2.5V – 1.0 1.5 mA VDD = 1.8V – 0.8 1.2 mA VDD = 3.3V – 1.1 1.7 mA VDD = 2.5V – 0.9 1.4 mA VDD = 1.8V – 0.75 1.15 mA VDD = 3.3V – 1.05 1.6 mA VDD = 2.5V – 0.85 1.3 mA VDD = 1.8V – 0.7 1.1 mA VDD = 3.3V – 1.0 1.5 mA VDD = 2.5V – 0.85 1.3 mA VDD = 1.8V – 0.7 1.1 mA VDD = 3.3V – 1.0 1.5 mA VDD = 2.5V – 0.85 1.3 mA VDD = 1.8V – 0.7 1.1 mA – – 10 µA 0.4 1.5 8 MΩ RUP2 30 70 150 kΩ Rf 50 100 200 kΩ 4.8 6 7.2 pF 8 10 12 pF 5027×1 (fO), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 48MHz 5027×2 (fO/2), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 24MHz 5027×3 (fO/4), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 12MHz Current consumption*1 IDD 5027×4 (fO/8), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 6MHz 5027×5 (fO/16), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 3MHz 5027×6 (fO/32), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 1.5MHz 5027×7 (fO/64), Measurement cct 1, no load, INHN = open, fO = 60MHz, fOUT = 0.94MHz Standby current INHN pull-up resistance Oscillator feedback resistance Oscillator capacitance IST RUP1 CG CD Measurement cct 1, INHN = LOW Measurement cct 6 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. *1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3 SEIKO NPC CORPORATION —9 WF5027 series For Fundamental Oscillator: High frequency version (5027×P to 5027×W) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter Symbol Condition Unit min typ max VDD – 0.4 – – V – – 0.4 V HIGH-level output voltage VOH Q: Measurement cct 3, IOH = – 4mA LOW-level output voltage VOL Q: Measurement cct 3, IOL = 4mA HIGH-level input voltage VIH INHN, Measurement cct 4 0.7VDD – – V LOW-level input voltage VIL INHN, Measurement cct 4 – – 0.3VDD V VOH = VDD – 10 µA IZ Q: Measurement cct 5, INHN = LOW – Output leakage current VOL = VSS – 10 – – µA VDD = 3.3V – 2.5 3.8 mA VDD = 2.5V – 2.0 3.0 mA VDD = 1.8V – 1.6 2.4 mA VDD = 3.3V – 2.4 3.6 mA VDD = 2.5V – 1.9 2.9 mA VDD = 1.8V – 1.5 2.3 mA VDD = 3.3V – 1.8 2.7 mA VDD = 2.5V – 1.5 2.3 mA VDD = 1.8V – 1.2 1.6 mA VDD = 3.3V – 1.7 2.6 mA VDD = 2.5V – 1.4 2.1 mA VDD = 1.8V – 1.1 1.7 mA VDD = 3.3V – 1.6 2.4 mA VDD = 2.5V – 1.3 2.0 mA VDD = 1.8V – 1.0 1.5 mA VDD = 3.3V – 1.5 2.3 mA VDD = 2.5V – 1.2 1.8 mA VDD = 1.8V – 1.0 1.5 mA VDD = 3.3V – 1.5 2.3 mA VDD = 2.5V – 1.2 1.8 mA VDD = 1.8V – 1.0 1.5 mA – – 10 µA 0.4 1.5 8 MΩ RUP2 30 70 150 kΩ Rf 50 100 200 kΩ 1.6 2 2.4 pF 3.2 4 4.8 pF 5027×P (fO), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 80MHz 5027×Q (fO/2), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 40MHz 5027×R (fO/4), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 20MHz Current consumption*1 IDD 5027×S (fO/8), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 10MHz 5027×T (fO/16), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 5MHz 5027×V (fO/32), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 2.5MHz 5027×W (fO/64), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 1.25MHz Standby current INHN pull-up resistance Oscillator feedback resistance Oscillator capacitance IST RUP1 CG CD Measurement cct 1, INHN = LOW Measurement cct 6 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. *1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3 SEIKO NPC CORPORATION —10 WF5027 series For 3rd Overtone Oscillator (5027×A to 5027×D) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Rating Parameter HIGH-level output voltage LOW-level output voltage Symbol VOH VOL Condition Unit min typ max Q: Measurement cct 3, IOH = – 8mA, VDD = 2.25 to 3.63V VDD – 0.4 – – V Q: Measurement cct 3, IOH = – 4mA, VDD = 1.60 to 2.25V VDD – 0.4 – – V Q: Measurement cct 3, IOL = 8mA, VDD = 2.25 to 3.63V – – 0.4 V Q: Measurement cct 3, IOL = 4mA, VDD = 1.60 to 2.25V – – 0.4 V HIGH-level input voltage VIH INHN, Measurement cct 4 0.7VDD – – V LOW-level input voltage VIL INHN, Measurement cct 4 – – 0.3VDD V VOH = VDD – 10 µA IZ Q: Measurement cct 5, INHN = LOW – Output leakage current VOL = VSS – 10 – – µA VDD = 3.3V – 3.6 5.4 mA VDD = 2.5V – 3.0 4.5 mA VDD = 1.8V – 2.6 3.9 mA VDD = 3.3V – 3.8 5.7 mA VDD = 2.5V – 3.2 4.8 mA VDD = 1.8V – 2.8 4.2 mA VDD = 3.3V – 4.8 7.2 mA VDD = 2.5V – 4.0 6.0 mA 5027×A, Measurement cct 1, no load, INHN = open, fO = 48MHz 5027×B, Measurement cct 1, no load, INHN = open, fO = 54MHz Current consumption*1 IDD 5027×C, Measurement cct 1, no load, INHN = open, fO = 85MHz 5027×D, Measurement cct 1, no load, INHN = open, fO = 100MHz Standby current INHN pull-up resistance IST RUP1 VDD = 1.8V – 3.4 5.1 mA VDD = 3.3V – 5.3 8.0 mA VDD = 2.5V – 4.4 6.6 mA VDD = 1.8V – 3.6 5.4 mA Measurement cct 1, INHN = LOW – – 10 µA 0.4 1.5 8 MΩ 30 70 150 kΩ 5027×A 2.6 3.8 5.0 kΩ 5027×B 2.2 3.2 4.2 kΩ 5027×C 1.9 2.8 3.7 kΩ 5027×D 1.9 2.8 3.7 kΩ 9.6 12 14.4 pF Measurement cct 6 RUP2 Oscillator feedback resistance Rf 5027×A CG Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 5027×B 6.4 8 9.6 pF 5027×C 4.8 6 7.2 pF 5027×D 1.6 2 2.4 pF 5027×A 9.6 12 14.4 pF Oscillator capacitance CD Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 5027×B 9.6 12 14.4 pF 5027×C 6.4 8 9.6 pF 5027×D 4.8 6 7.2 pF *1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3 SEIKO NPC CORPORATION —11 WF5027 series AC Characteristics For Fundamental Oscillator (5027×1 to 5027×7, 5027×P to 5027×W) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter Symbol tr1 Output rise time tr2 tf1 Output fall time Rating Condition tf2 min typ max Unit Measurement cct 1, CL = 15pF, 0.1VDD to 0.9VDD VDD = 2.25 to 3.36V – 2.0 4.5 ns VDD = 1.60 to 2.25V – 3.0 5.0 ns Measurement cct 1, CL = 15pF, 0.9VDD to 0.1VDD VDD = 2.25 to 3.36V – 2.0 4.5 ns – 3.0 5.0 ns Output duty cycle Duty Measurement cct 1, Ta = 25°C, CL = 15pF VDD = 1.60 to 2.25V 45 50 55 % Output disable delay time tOD Measurement cct 2, Ta = 25°C, CL ≤ 15pF – – 50 µs For 3rd Overtone Oscillator (5027×A to 5027×D) VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted. Parameter Symbol tr1 Output rise time tr2 tf1 Output fall time Rating Condition tf2 min typ max Unit Measurement cct 1, CL = 15pF, 0.1VDD to 0.9VDD VDD = 2.25 to 3.36V – 1.2 3.0 ns VDD = 1.60 to 2.25V – 1.6 4.0 ns Measurement cct 1, CL = 15pF, 0.9VDD to 0.1VDD VDD = 2.25 to 3.36V – 1.2 3.0 ns – 1.6 4.0 ns Output duty cycle Duty Measurement cct 1, Ta = 25°C, CL = 15pF VDD = 1.60 to 2.25V 45 50 55 % Output disable delay time tOD Measurement cct 2, Ta = 25°C, CL ≤ 15pF – – 50 µs Timing chart 0.9VDD Q 0.9VDD TW 0.1VDD DUTY measurement voltage (0.5V DD ) 0.1VDD DUTY= TW/ T T tr 100 (%) tf Figure 1. Output switching waveform INHN VIH VIL tOD tSTR 0.1V Q Normal operation Output stopped Hi-Z* Normal operation When INHN goes HIGH to LOW, the Q output goes HIGH once and then becomes high impedance. When INHN goes LOW to HIGH, the Q output goes from high impedance to normal output operation when the oscillation starts (oscillation is detected). *) The high-impedance interval in the figure is shown as a LOW level due to the 1kΩ pull-down resistor connected to the Q pin (see "Measurement circuit 2" in the "Measurement Circuits" section). Figure 2. Output disable and oscillation start timing chart SEIKO NPC CORPORATION —12 WF5027 series FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the Q output becomes high impedance. INHN Q Oscillator HIGH (or open) Frequency output Normal operation LOW High impedance Stopped Power-saving Pull-up Resistor The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level (HIGH or LOW). When INHN is tied LOW level, the pull-up resistance is large (RUP1), reducing the current consumed by the resistance. When INHN is left open circuit, the pull-up resistance is small (RUP2), which increases the input susceptibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output. Oscillation Detector Function The WF5027 series also feature an oscillation detector circuit. This circuit functions to disable the outputs until the oscillator circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when power is applied or when INHN is switched. SEIKO NPC CORPORATION —13 WF5027 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 Measurement parameter: IDD, IST, Duty, tr , tf Measurement parameter: VIH, VIL IDD IST A VDD VDD XT XT X'tal IDD: Open X'tal XTN XTN INHN VSS INHN VSS CL = 15pF (Including probe capacitance) IDD: Open IST: Short Note: The AC characteristics are observed using an oscilloscope on pin Q. VIH V VIL VIH: Voltage in VSS to VDD transition that changes the output state. VIL: Voltage in VDD to VSS transition that changes the output state. INHN has an oscillation stop function. Measurement cct 2 Measurement cct 5 Measurement parameter: tOD Measurement parameter: IZ VDD VDD 0.1µF VDD 0.1µF Q C1 Signal Generator 0.1µF Q Q 0.1µF A Q or VSS XTN CL INHN VSS RL IZ INHN VSS R1 VDD or VSS XTN input signal: 1Vp-p, sine wave C1: 0.001µF CL: 15pF R1: 50Ω RL: 1kΩ Measurement cct 6 Measurement parameter: RUP1, RUP2 Measurement cct 3 Measurement parameter: VOH, VOL VDD 0.1µF 0.1µF VDD INHN VSS 50Ω Signal Generator Q 0.001µF XTN VOH V VOL VSS 50Ω ∆V VOH VS VS adjusted such that ∆V = 50 × IOH. VS VOL VIN V 0.1µF VS A IUP RUP1 = VDD IUP (VIN = 0V) RUP2 = VDD 0.7V DD (VIN = 0.7V DD) IUP ∆V VS adjusted such that ∆V = 50 × IOL. XTN input signal: 1Vp-p, sine wave SEIKO NPC CORPORATION —14 WF5027 series TYPICAL PERFORMANCE (for fundamental oscillator) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. ■ Crystal used for measurement ■ Parameter fO = 48MHz fO = 80MHz C0 [pF] 1.6 2.1 R1 [Ω] 12 10 Crystal parameters C1 L1 R1 C0 10 10 8 8 Current consumption [mA] Current consumption [mA] Current Consumption 6 4 CL = 15pF 2 6 CL = 15pF 4 2 CL = 0pF CL = 0pF 0 0 1.5 2 3 2.5 3.5 1.5 4 2 3 2.5 3.5 4 VDD [V] VDD [V] 5027A1, fOUT = 48MHz, Ta = 25°C 5027AP, fOUT = 80MHz, Ta = 25°C Negative Resistance Frequency [MHz] 10 0 20 30 40 Frequency [MHz] 50 60 0 60 70 80 90 100 –200 Negative resistance [Ω] Negative resistance [Ω] –200 50 –400 –600 –800 –400 C0 = 2pF –600 C0 = 1pF –800 C0 = 2pF C0 = 0pF C0 = 0pF –1000 C0 = 1pF 5027×1 to ×7, VDD = 3.3V, Ta = 25°C –1000 5027×P to ×W, VDD = 3.3V, Ta = 25°C Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig and measurement conditions. SEIKO NPC CORPORATION —15 WF5027 series 1 1 0.5 0.5 ∆f/f [ppm] ∆f/f [ppm] Frequency Deviation by Supply Voltage Change 0 0 –0.5 –0.5 –1 1.6 –1 1.6 2.1 2.6 VDD [V] 3.1 3.6 2.1 2.6 VDD [V] 3.1 3.6 5027×P to ×W, fOUT = 80MHz, 3.3V standard, Ta = 25°C 5027×1 to ×7, fOUT = 48MHz, 3.3V standard, Ta = 25°C 50 50 40 40 Drive level [µW] Drive level [µW] Drive Level 30 20 30 20 10 10 0 0 1.5 2 3 2.5 3.5 4 1.5 2 3 2.5 VDD [V] 3.5 4 VDD [V] 5027×1 to ×7, fOUT = 48MHz, Ta = 25°C 5027×P to ×W, fOUT = 80MHz, Ta = 25°C Phase Noise –40 –40 –60 –60 Phase noise [dBc/Hz] Phase noise [dBc/Hz] Measurement equipment: Agilent E5052 Signal Source Analyzer –80 –100 –120 –100 –120 –140 –140 –160 –80 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset frequency [Hz] 5027A1, VDD = 3.3V, fOSC = fOUT = 48MHz, Ta = 25°C –160 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset frequency [Hz] 5027AP, VDD = 3.3V, fOSC = fOUT = 80MHz, Ta = 25°C SEIKO NPC CORPORATION —16 WF5027 series Output Waveform Measurement equipment: Agilent 54855A Oscilloscope 5027A1, VDD = 3.3V, fOUT = 48MHz, CL = 15pF, Ta = 25°C 5027AP, VDD = 3.3V, fOUT = 80MHz, CL = 15pF, Ta = 25°C SEIKO NPC CORPORATION —17 WF5027 series TYPICAL PERFORMANCE (for 3rd overtone oscillator) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. ■ Crystal used for measurement ■ Parameter fO = 85MHz fO = 100MHz C0 [pF] 0.9 1.2 R1 [Ω] 56 45 Crystal parameters L1 C1 R1 C0 12 12 10 10 Current consumption [mA] Current consumption [mA] Current Consumption 8 CL = 15pF 6 4 CL = 0pF 8 CL = 15pF 6 4 CL = 0pF 2 2 0 1.6 2.2 3.4 2.8 VDD [V] 0 1.6 4 5027×D, fOUT = 85MHz, Ta = 25°C 2.2 2.8 VDD [V] 3.4 4 5027AP, fOUT = 100MHz, Ta = 25°C Negative Resistance 0 0 40 Frequency [MHz] 80 120 160 200 Negative resistance [Ω] C0 = 2pF –200 –400 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V C0 = 1pF C0 = 0pF –600 –800 –1000 1.8V 2.5V 3.3V 5027×D, Ta = 25°C, recommended operating frequency range: 85MHz to 110MHz Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig and measurement conditions. SEIKO NPC CORPORATION —18 WF5027 series 1 1 0.5 0.5 ∆f/f [ppm] ∆f/f [ppm] Frequency Deviation by Supply Voltage Change 0 0 –0.5 –0.5 –1 –1 1.6 2.1 2.6 VDD [V] 3.1 1.6 3.6 5027×D, fOUT = 85MHz, 3.3V standard, Ta = 25°C 2.6 VDD [V] 2.1 3.1 3.6 5027×D, fOUT = 100MHz, 3.3V standard, Ta = 25°C 200 200 150 150 Drive level [µW] Drive level [µW] Drive Level 100 50 0 100 50 1.5 2 3 2.5 3.5 0 4 1.5 2 3 2.5 3.5 4 VDD [V] VDD [V] 5027×D, fOUT = 85MHz, Ta = 25°C 5027×D, fOUT = 100MHz, Ta = 25°C Phase Noise –40 –40 –60 –60 Phase noise [dBc/Hz] Phase noise [dBc/Hz] Measurement equipment: Agilent E5052 Signal Source Analyzer –80 –100 –120 –100 –120 –140 –140 –160 –80 –160 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset frequency [Hz] 5027×D, VDD = 3.3V, fOSC = fOUT = 85MHz, Ta = 25°C 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Offset frequency [Hz] 5027×D, VDD = 3.3V, fOSC = fOUT = 100MHz, Ta = 25°C SEIKO NPC CORPORATION —19 WF5027 series Output Waveform Measurement equipment: Agilent 54855A Oscilloscope 5027×D, VDD = 3.3V, fOUT = 85MHz, CL = 15pF, Ta = 25°C 5027×D, VDD = 3.3V, fOUT = 100MHz, CL = 15pF, Ta = 25°C SEIKO NPC CORPORATION —20 WF5027 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: [email protected] NC0505CE 2007.03 SEIKO NPC CORPORATION —21