NTE2668 Silicon NPN Transistor High Current Switching Features: D Adoption of FBET, MBIT process D Large Current Capacitance D Low Collector-To-Emitter Saturation Voltage D High Speed Switching D High Allowable Power Dissipation Applications: D DC-DC Converter D Relay Drivers D Lamp Drivers D Motor Drivers D Strobes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temprature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 - - 0.1 μA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 0.1 μA VCE = 2V, IC = 500mA 200 - 560 VCE = 10V, IC = 500mA - 330 - MHz h FE DC Current Gain f T Gain-Bandwidth Product Output Capacitance Cob VCB = 10V, f = 1MHz - 28 - pF Collector-to-Emitter Saturation Voltage VCE IC = 3.5A, IB = 175mA - 160 240 mV IC = 2A , IB = 40mA - 110 170 mV IC = 2A , IB = 40mA - 0.83 1.2 V Base-to-Emitter Saturation Voltage VBE Collector-to-Base Breakdown Voltage VCBO IC = 10μA, IE = 0 80 - - V Collector-to-Emitter Breakdown Voltage VCES IC = 100μA, RBE = ∞ 80 - - V Collector-to-Emitter Breakdown Voltage VCEO IC = 1mA, RBE = ∞ 50 - - V Emitter-to-Base Breakdown Voltage VEBO IC = 10μA, IC = 0 6 - - V Pulse Width = 20μs, Duty Cycle ≤ 1%, 20IB1 = -20IB2 = IC = 2.5A, VCC = 25V - 30 - ns - 420 - ns - 25 - ns Turn-On Time ton Storage Time tstg Fall Time tf .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) C .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3)