NTE NTE5351

NTE5351
Silicon Controlled Rectifier (SCR)
for High Speed Switching
Features:
D Fast Turn–Off Time
D High di/dt and dv/dt Capabilities
D Shorted–Emitter Gate–Cathode Construction
D Center Gate Construction
Non–Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRSOM . . . . . . . . . . . . . . . . . . . . . 700V
Non–Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDSOM . . . . . . . . . . . . . . . . . . . . 700V
Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRROM . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDROM . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +60°C, 180° conduction angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 5.0A
Average On–State Current (TC = +60°C, 180° conduction angle), IT(AV) . . . . . . . . . . . . . . . . . . 3.2A
Peak Surge (Non–Repetitive) On–State Current, ITSM
(TC = +60°C, for one full cycle at applied voltage)
60Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
50Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A
Rate of Change of On–State Current (VD = 600V, IGT = 50mA, t = 1 to 8.3ms), di/dt . . . . . 200A/µs
Fusing Current (TJ = –40° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak Forward Gate Power Dissipation (10µs Max, Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Peak Reverse Gate Power Dissipation (10µs Max, Note 2), PRGM . . . . . . . . . . . . . . . . . . . . . . . . 3W
Average Gate Power Dissipation (10µs Max, Note 2), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Lead Temperature (During Soldering, 1/32” from seating plane, 10sec max), TL . . . . . . . . . +225°C
Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum
is permitted.
Electrical Characteristics: (At “Maximum Ratings” and TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Off–State Forward Current
IDOM
VD = 600V, TC = +100°C, Gate Open
–
0.5
3.0
mA
Peak Off–State Reverse Current
IROM
VD = 600V, TC = +100°C, Gate Open
–
0.3
1.5
mA
Instantaneous On–State Voltage
vT
iT = 30A Peak
–
2.2
3.0
V
Instantaneous Holding Current
iHO
Gate Open
–
20
50
mA
100
250
–
V/µs
Critical Rate of Rise of Off–State
Current
dv/dt
VD = 600V, exponential voltage rise,
TC = +80°C, Gate Open
DC Gate Trigger Current
IGT
VD = 12V, RL = 30Ω
–
15
40
mA
DC Gate Trigger Voltage
VGT
VD = 12V, RL = 30Ω
–
1.8
3.5
V
Gate Controlled Turn–On Time
tgt
VDX = 600V, IGT = 300mA, tr = 0.1µs,
IT = 2A peak
–
0.7
–
µs
Circuit Commutated Turn–Off
Time
tq
VCX = 600V, iT = 2A, pulse duration = 50µs,
dv/dt = 100V/µs, –di/dt = –10A/µs,
IGT = 100mA, VGT = 0V (at turn–off),
TC = +80°C
–
4
6
µs
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Gate
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Anode/Case
Cathode