MOTOROLA T2500

MOTOROLA
Order this document
by T2500/D
SEMICONDUCTOR TECHNICAL DATA
T2500
Series
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
TRIACs
6 AMPERES RMS
200 thru 800 VOLTS
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open)
VDRM
T2500 B
D
M
N
On-State Current RMS
(Full Cycle Sine Wave 50 to 60 Hz)
(TC = +80°C)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Circuit Fusing Considerations
(t = 8.3 ms)
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width = 10 µs)
Operating Junction Temperature Range
Storage Temperature Range
Value
Unit
Volts
200
400
600
800
IT(RMS)
6
Amps
ITSM
60
Amps
I2t
15
A2s
PGM
16
Watts
PG(AV)
0.2
Watt
IGTM
4
Amps
TJ
–40 to +100
°C
Tstg
–40 to +150
°C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RθJC
2.7
°C/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(Rated VDRM, Gate Open,TJ = 100°C)
IDRM
—
—
2
mA
Maximum On-State Voltage (Either Direction)*
(IT = 30 A Peak)
VTM
—
—
2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 12 Ohms)
(VD = VDROM, RL = 125 Ohms, TC = 100°C)
VGT
mA
—
—
—
—
10
20
15
30
25
60
25
60
—
0.2
1.25
—
2.5
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA)
IH
—
15
30
mA
Gate Controlled Turn-On Time
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs)
tgt
—
1.6
—
µs
Critical Rate-of-Rise of Commutation Voltage
(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c)
—
10
—
V/µs
Critical Rate-of-Rise of Off-State Voltage
(Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
T2500B
T2500D,M,N
*Pulse Test: Pulse Width
dv/dt
V/µs
—
—
p 300 µs, Duty Cycle p 2%.
100
75
—
—
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
QUADRANT I
MT2(+), G(–)
MT2(+), G(+)
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
G(–)
G(+)
QUADRANT III
QUADRANT IV
MT2(–), G(–)
MT2(–), G(+)
MT2(–)
USAGE
General
PART NUMBER
MBS4991
MBS4992
VS
6.0 – 10 V
7.5 – 9.0 V
IS
350 µA Max
120 µA Max
VS1 – VS2
0.5 V Max
0.2 V Max
Temperature
Coefficient
0.02%/°C Typ
See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.
2
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
B
F
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
S
4
Q
A
1 2 3
STYLE 4:
PIN 1.
2.
3.
4.
U
H
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
K
Z
R
L
V
J
G
D
N
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.055
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A-04
(TO–220AB)
Motorola Thyristor Device Data
3
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Motorola Thyristor Device Data
*T2500/D*
T2500/D