NTE NTE5428

NTE5427 thru NTE5429
Silicon Controlled Rectifier (SCR)
7 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), VRRM
NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +110°C), VDRM
NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 7A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 80A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Peak Off–State Current
Symbol
IRRM
IDRM
Maximum On–State Voltage
DC Holding Current
VTM
Test Conditions
Min
Typ
Max
Unit
VRRM = Max, VDRM = Max,
TC = +110°C,
° RGK = 1kΩ
Ω
–
–
1
mA
–
–
1
mA
IT = 7A
–
–
2
V
–
–
50
mA
IHOLD
DC Gate–Trigger Current
IGT
VD = 6VDC, RL = 100Ω
–
–
25
mA
DC Gate–Trigger Voltage
VGT
VD = 6VDC, RL = 100Ω
–
–
1.5
V
Gate Controlled Turn–On Time
tgt
IG x 3GT
–
2
–
µs
I2t for Fusing Reference
I2t
For SCR Protection
–
–
2.6
A2sec
–
100
–
V/µs
Critical Rate of Off–State Voltage
dv/dt Gate Open, TC = +100°C
(critical)
.352 (8.95) Dia Max
.325 (8.13) Dia Max
.250
(6.35)
Max
1.500
(38.1)
Min
.019 (0.5)
Gate
Cathode
Anode
45°
.031 (.793)