MICROSEMI APTGT35H120T3G

APTGT35H120T3G
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
CR3
19
Q2
22
7
23
8
CR2
26
Q3
11
10
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Q4
CR4
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
55
35
70
±20
208
Tj = 125°C
70A@1150V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
July, 2006
CR1
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT35H120T3G – Rev 1
Q1
18
VCES = 1200V
IC = 35A @ Tc = 80°C
APTGT35H120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE = 15V
IC = 35A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
Tf
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Tf
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
VF
Min
Test Conditions
Min
1.7
2.0
5.8
Typ
2.5
0.15
90
30
420
Max
250
500
2.1
VR=1200V
IF = 30A
IF = 60A
IF = 30A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Er
Reverse Recovery Energy
IF = 30A
VR = 800V
µA
V
V
nA
Max
Unit
nF
ns
70
90
50
ns
520
90
3.5
mJ
4.1
Typ
Max
Unit
V
Tj = 25°C
Tj = 125°C
Tc = 70°C
Unit
6.5
400
1200
DC Forward Current
Diode Forward Voltage
5.0
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 35A
R G = 27Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 35A
R G = 27Ω
VGE = ±15V
VBus = 600V
Tj = 125°C
IC = 35A
R G = 27Ω
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VGE = 0V
VCE = 1200V
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Min
250
500
30
2.0
2.3
Tj = 125°C
1.8
Tj = 25°C
370
Tj = 125°C
Tj = 25°C
500
660
Tj = 125°C
3450
Tj = 125°C
1.6
µA
A
2.5
V
ns
July, 2006
ICES
Test Conditions
nC
mJ
di/dt =1000A/µs
www.microsemi.com
2-5
APTGT35H120T3G – Rev 1
Symbol Characteristic
APTGT35H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.6
1.2
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT35H120T3G – Rev 1
28
17
1
July, 2006
SP3 Package outline (dimensions in mm)
APTGT35H120T3G
Typical Performance Curve
Output Characteristics (V GE=15V)
80
70
T J = 125°C
60
T J=25°C
60
VGE =17V
50
50
T J=125°C
IC (A)
IC (A)
Output Characteristics
70
40
30
VGE =15V
40
30
VGE=9V
20
20
10
10
0
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
0
3.5
8
T J=25°C
60
6
T J=125°C
40
30
5
2
1
0
0
7
8
9
10
11
0
12
10
20
40
50
60
70
80
Reverse Bias Safe Operating Area
80
VCE = 600V
VGE =15V
IC = 35A
T J = 125°C
70
Eon
60
5
IC (A)
6
30
IC (A)
Switching Energy Losses vs Gate Resistance
7
Eoff
Eon
V GE (V)
8
4
3
10
6
3
4
20
5
2
V CE (V)
V CE = 600V
V GE = 15V
RG = 27Ω
T J = 125°C
7
E (mJ)
IC (A)
50
1
Energy losses vs Collector Current
Transfert Characteristics
70
E (mJ)
VGE=13V
Eoff
50
40
30
4
VGE=15V
T J=125°C
RG=27Ω
20
3
10
2
0
25
45
65
85
Gate Resistance (ohms)
105
0
400
800
V CE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.3
0.2
0.1
0.9
0.7
July, 2006
0.6
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
www.microsemi.com
1
10
4-5
APTGT35H120T3G – Rev 1
Thermal Impedance (°C/W)
0.7
APTGT35H120T3G
Forward Characteristic of diode
80
V CE=600V
D=50%
RG =27Ω
T J=125°C
T C=75°C
60
ZVS
ZCS
40
70
60
50
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
40
30
20
20
0
0
10
T J=125°C
TJ =25°C
10
hard
switching
0
20
30
IC (A)
40
50
0
60
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
1
0.8
0.6
0.4
0.2
Diode
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGT35H120T3G – Rev 1
July, 2006
rectangular Pulse Duration (Seconds)