APTGT30H170T3G Full - Bridge Trench + Field Stop IGBT® Power Module VCES = 1700V IC = 30A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3 11 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring 10 Q4 CR4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 45 30 70 ±20 210 Tj = 125°C 60A@1600V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 CR3 CR1 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT30H170T3G – Rev 1 Q1 18 APTGT30H170T3G Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 30A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Cres Td(on) Tr Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 30A R G = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 30A R G = 18Ω Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=1700V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =800A/µs 5.2 Min Typ 2.0 2.4 5.8 Typ 2500 90 100 70 Typ Tj = 25°C Tj = 125°C TC=80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C µA 6.4 600 V nA Max Unit 50 1.8 1.9 385 490 14 Tj = 125°C Tj = 25°C Tj = 125°C 23 6 12 Typ 50 3952 V pF ns ns mJ Max 250 500 Min R 25 250 2.4 80 100 70 750 100 17 15 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). RT = Unit 650 Min 1700 Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max Unit V µA A 2.2 V ns µC mJ Max July, 2006 Symbol Characteristic Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T www.microsemi.com 2-5 APTGT30H170T3G – Rev 1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGT30H170T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 3500 -40 -40 -40 2.5 Max 0.6 0.7 Unit °C/W V 150 125 100 4.7 110 °C N.m g SP3 Package outline (dimensions in mm) 28 17 1 12 www.microsemi.com 3-5 APTGT30H170T3G – Rev 1 July, 2006 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGT30H170T3G Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 60 60 T J = 125°C 50 T J=25°C VGE =19V 40 40 IC (A) T J=125°C 30 VGE =15V 30 VGE =13V 20 20 10 10 0 VGE =9V 0 0 0.5 1 1.5 2 2.5 V CE (V) 3 3.5 4 0 VCE = 900V VGE = 15V RG = 18 Ω TJ = 125°C 35 TJ=25°C 30 30 E (mJ) IC (A) 40 T J=125°C 20 4 5 25 Eon Eoff 20 15 Er 10 10 TJ=125°C 5 0 0 5 6 7 8 9 10 0 11 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 80 70 VCE = 900V VGE =15V IC = 30A TJ = 125°C 60 Eon 50 IC (A) 60 E (mJ) 3 V CE (V) 40 50 40 Eoff 40 30 VGE =15V TJ=125°C RG=18 Ω 20 20 Er 10 0 0 20 40 60 80 100 Gate Resistance (ohms) 0.5 400 800 1200 1600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0 120 IGBT 0.9 0.7 July, 2006 0 Thermal Impedance (°C/W) 2 Energy losses vs Collector Current Transfert Characteristics 60 1 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT30H170T3G – Rev 1 IC (A) 50 APTGT30H170T3G Forward Characteristic of diode 100 40 VCE=900V D=50% R G=18 Ω T J=125°C T C=75°C ZVS 35 30 25 20 ZCS 15 hard switching 10 TJ=25°C 80 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 45 60 TJ=125°C 40 20 T J=125°C 5 0 0 0 10 20 30 IC (A) 40 50 0 60 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.9 0.8 0.7 0.6 0.7 0.5 0.4 0.5 0.3 0.2 Diode 0.9 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT30H170T3G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)