MICROSEMI APTM20AM05FT

APTM20AM05FT
VDSS = 200V
RDSon = 5mΩ
Ω max @ Tj = 25°C
ID = 333A @ Tc = 25°C
Phase leg
MOSFET Power Module
Application
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
•
•
•
•
VBUS
Benefits
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
200
333
249
700
±30
5
1250
333
30
1300
Unit
V
A
V
mΩ
W
A
June, 2003
0/VBUS
•
•
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTM20AM05FT – Rev 0
OUT
DK1
NC
G1
SK1
NC
SK2
G2
NC
DK2
NC
NTC1
NTC2
Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
- Symmetrical design
- M5 power connectors
Internal thermistor for temperature monitoring
High level of integration
APTM20AM05FT
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
VGS = 0V, ID = 1mA
Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 166.5A
VGS = VDS, ID = 8mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 333A
Td(on)
Turn-on Delay Time
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min
Typ
40.8
9.1
3.1
Unit
V
1000
2500
5
4
±250
mΩ
V
nA
Max
Unit
µA
nF
nC
376
600
15
Resistive Switching
VGS = 15V
VBus = 100V
ID = 333A
RG = 0.22 Ω
25
ns
50
10
Test Conditions
Min
Typ
Tj = 25°C
Max
333
249
1.3
8
240
Tj = 125°C
420
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 333A
IS = - 333A
VR = 100V
diS/dt = 800A/µs
IS = - 333A
VR = 100V
diS/dt = 800A/µs
Max
1184
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
Typ
VGS = 0V,VDS = 200V
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Tr
Min
200
Tj = 25°C
8
Tj = 125°C
16
Unit
A
V
V/ns
ns
µC
APT website – http://www.advancedpower.com
2-3
APTM20AM05FT – Rev 0
June, 2003
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 333A
di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APTM20AM05FT
Thermal and package characteristics
Symbol Characteristic
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case
VISOL
t =1 min, I isol<1mA, 50/60Hz
TJ
Operating junction temperature range
TSTG
Storage Temperature Range
TC
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
Min
To heatsink
For terminals
M5
M5
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
exp B 25 / 85
1
1
−
T25 T
Unit
°C/W
V
-40
-40
-40
2
2
Min
R 25
Max
0.1
2500
Temperature sensor NTC
RT =
Typ
150
125
100
3.5
3.5
550
Typ
68
4080
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature
RT: Thermistor value at T
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTM20AM05FT – Rev 0
June, 2003
Ra 3,2
Package outline