APTM60H23FT1G VDSS = 600V RDSon = 190mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 10 NTC 12 Features • Power MOS 8™ FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • • • • • • • Pins 3/4 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 600 20 15 125 ±30 230 208 17 Unit V A January, 2010 ID Parameter Drain - Source Breakdown Voltage V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM60H23FT1G – Rev 0 Symbol VDSS APTM60H23FT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 600V VGS = 0V Tj = 125°C VGS = 10V, ID = 17A VGS = VDS, ID = 1mA VGS = ±30 V Min 3 Typ 190 4 Max 250 1000 230 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 165 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 17A Td(on) Turn-on Delay Time Resistive switching @ 25°C VGS = 15V VBus = 400V ID = 17A RG = 4.7Ω 37 Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 5316 610 56 pF nC 36 70 43 ns 115 34 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 20 15 1 30 200 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 17A IS = - 17A VR = 100V diS/dt = 100A/µs Tj = 25°C 0.76 Tj = 125°C 1.91 Unit A V V/ns ns µC www.microsemi.com 2–5 APTM60H23FT1G – Rev 0 January, 2010 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 17A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C APTM60H23FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.6 150 125 100 4.7 80 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTM60H23FT1G – Rev 0 January, 2010 SP1 Package outline (dimensions in mm) APTM60H23FT1G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 50 75 TJ=25°C ID, Drain Current (A) ID, Drain Current (A) VGS=10V 62.5 50 TJ=125°C 37.5 25 12.5 VGS=7 &8V 40 6V 30 20 5.5V 10 TJ=125°C 0 0 0 5 10 15 20 0 5 20 25 30 50 3 VGS=10V ID=17A 2 1.5 1 0.5 0 40 TJ=125°C VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 30 20 TJ=25°C 10 0 25 50 75 100 125 150 0 1 TJ, Junction Temperature (°C) 3 4 5 6 7 Capacitance vs Drain to Source Voltage 100000 12 C, Capacitance (pF) VDS=120V ID=17A TJ=25°C 10 2 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source VDS=300V 8 6 VDS=480V 4 2 0 Ciss 10000 1000 Coss 100 10 Crss 25 50 75 100 125 150 175 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4–5 January, 2010 1 0 APTM60H23FT1G – Rev 0 VGS, Gate to Source Voltage 15 Transfert Characteristics Normalized RDSon vs. Temperature 2.5 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) APTM60H23FT1G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 60 50 40 TJ=125°C 30 20 TJ=25°C 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.5 0.9 0.7 0.4 0.5 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM60H23FT1G – Rev 0 January, 2010 rectangular Pulse Duration (Seconds)