APTM120H65FT3G VDSS = 1200V RDSon = 650mΩ typ @ Tj = 25°C ID = 16A @ Tc = 25°C Full bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • • 28 27 26 25 23 22 • • • 20 19 18 29 16 30 15 14 31 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1200 16 12 105 ±30 780 390 14 Unit V A August, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM120H65FT3G – Rev 0 Symbol VDSS APTM120H65FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 650 4 Max 250 1000 780 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 14A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 7736 715 92 pF 300 nC 50 140 50 Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 14A RG = 2.2Ω 31 ns 170 48 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 14A IS = - 14A VR = 100V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 1.72 4.67 Max 16 12 1.1 25 335 640 Unit A V V/ns ns µC www.microsemi.com 2–5 APTM120H65FT3G – Rev 0 August, 2009 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 14A di/dt ≤ 1000A/µs VDD ≤ 800V Tj ≤ 125°C APTM120H65FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.32 150 125 100 4.7 110 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTM120H65FT3G – Rev 0 28 17 1 August, 2009 SP3 Package outline (dimensions in mm) APTM120H65FT3G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 25 40 TJ=125°C ID, Drain Current (A) 30 TJ=25°C 20 TJ=125°C 10 VGS=6, 7, 8 &9V 15 5V 10 5 4.5V 0 0 0 5 10 15 VDS, Drain to Source Voltage (V) 0 20 5 15 20 25 30 Transfert Characteristics Normalized RDS(on) vs. Temperature 20 3 VGS=10V ID=14A 2.5 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 15 TJ=125°C 10 TJ=25°C 5 0 25 50 75 100 125 150 0 1 3 4 5 6 Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 12 10000 ID=14A TJ=25°C VDS=240V Ciss VDS=600V 8 VDS=960V 6 4 2 C, Capacitance (pF) 10 2 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 0 1000 Coss 100 Crss 10 1 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 August, 2009 VGS, Gate to Source Voltage 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance 20 APTM120H65FT3G – Rev 0 ID, Drain Current (A) VGS=10V APTM120H65FT3G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 60 50 40 TJ=125°C 30 20 10 TJ=25°C 0 0 0.2 0.4 0.6 0.8 1 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM120H65FT3G – Rev 0 August, 2009 rectangular Pulse Duration (Seconds)