APTM10HM19FT3 Q1 Q3 18 11 22 7 19 10 23 Q2 8 Q4 26 4 27 3 30 29 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 70 50 300 ±30 20 208 75 30 1500 Unit V A V mΩ W A May, 2005 13 14 VDSS = 100V RDSon = 19mΩ typ @ Tj = 25°C ID = 70A @ Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10HM19FT3– Rev 0 Full - Bridge MOSFET Power Module APTM10HM19FT3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min VGS = 10V, ID = 35A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Min VGS = 10V VBus = 100V ID = 70A Unit Max Unit µA mΩ V nA pF nC 92 35 70 125 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 70A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 70A, R G = 5Ω Test Conditions ns 95 276 µJ 302 304 µJ 320 trr Reverse Recovery Time IS = -70A diS/dt = 100A/µs Tj = 25°C Max 70 50 1.3 5 200 Tj = 125°C 350 Qrr Reverse Recovery Charge IS = -70A diS/dt = 100A/µs Tj = 25°C 0.5 Tj = 125°C 1 VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z Typ 5100 1900 800 200 Max 250 1000 20 4 ±100 40 Source - Drain diode ratings and characteristics Symbol IS 19 2 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 70A R G = 5Ω Rise Time Typ Tj = 25°C Tj = 125°C Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 70A Unit A V V/ns ns µC APT website – http://www.advancedpower.com May, 2005 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 70A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2-6 APTM10HM19FT3– Rev 0 Symbol APTM10HM19FT3 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 1.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.6 150 125 100 4.7 110 Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 12 APT website – http://www.advancedpower.com 3-6 APTM10HM19FT3– Rev 0 28 17 1 May, 2005 Package outline (dimensions in mm) APTM10HM19FT3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 125 VGS=15V, 10V & 9V 250 200 ID, Drain Current (A) 8V 150 7V 100 6V 50 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 75 50 T J=25°C 25 T J=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 8 80 1.6 Normalized to V GS=10V @ 35A 1.4 VGS=10V 1.2 VGS=20V 1 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current ID, DC Drain Current (A) 0.8 70 60 50 40 30 20 10 0 0 50 100 150 200 ID, Drain Current (A) 250 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com May, 2005 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4-6 APTM10HM19FT3– Rev 0 ID, Drain Current (A) 300 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 35A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 1ms limited by RDSon 100 10ms 10 100ms Single pulse TJ=150°C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=70A T J=25°C 14 VDS=20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC) May, 2005 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5-6 APTM10HM19FT3– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10HM19FT3 APTM10HM19FT3 Delay Times vs Current Rise and Fall times vs Current 160 120 80 VDS=66V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 120 100 80 tr 60 20 0 0 0 20 40 60 80 100 ID, Drain Current (A) 0 120 1.5 0.5 Switching Energy (mJ) VDS=66V RG=5Ω TJ =125°C L=100µH 20 40 60 80 100 ID, Drain Current (A) 120 Switching Energy vs Gate Resistance Switching Energy vs Current 0.75 Eoff E on 0.25 0 VDS=66V ID=70A TJ=125°C L=100µH 1 Eoff 0.5 Eon 0 0 20 40 60 80 100 120 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 200 150 100 VDS=66V D=50% R G=5Ω TJ =125°C TC =75°C ZVS Hard switching 50 0 13 25 38 50 40 50 60 63 75 1000 TJ=150°C 100 T J=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10HM19FT3– Rev 0 May, 2005 I D, Drain Current (A) 30 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 250 20 Gate Resistance (Ohms) 300 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) VDS=66V R G=5Ω TJ =125°C L=100µH 140 td(off) tr and tf (ns) td(on) and td(off) (ns) 100