ADPOW APTM10HM19FT3

APTM10HM19FT3
Q1
Q3
18
11
22
7
19
10
23
Q2
8
Q4
26
4
27
3
30
29
32
31
15
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
70
50
300
±30
20
208
75
30
1500
Unit
V
A
V
mΩ
W
A
May, 2005
13 14
VDSS = 100V
RDSon = 19mΩ typ @ Tj = 25°C
ID = 70A @ Tc = 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM10HM19FT3– Rev 0
Full - Bridge
MOSFET Power Module
APTM10HM19FT3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
VGS = 10V, ID = 35A
VGS = VDS, ID = 1mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Min
VGS = 10V
VBus = 100V
ID = 70A
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
92
35
70
125
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 70A, R G = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 70A, R G = 5Ω
Test Conditions
ns
95
276
µJ
302
304
µJ
320
trr
Reverse Recovery Time
IS = -70A
diS/dt = 100A/µs
Tj = 25°C
Max
70
50
1.3
5
200
Tj = 125°C
350
Qrr
Reverse Recovery Charge
IS = -70A
diS/dt = 100A/µs
Tj = 25°C
0.5
Tj = 125°C
1
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery Z
Typ
5100
1900
800
200
Max
250
1000
20
4
±100
40
Source - Drain diode ratings and characteristics
Symbol
IS
19
2
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 70A
R G = 5Ω
Rise Time
Typ
Tj = 25°C
Tj = 125°C
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 70A
Unit
A
V
V/ns
ns
µC
APT website – http://www.advancedpower.com
May, 2005
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 70A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
2-6
APTM10HM19FT3– Rev 0
Symbol
APTM10HM19FT3
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
1.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.6
150
125
100
4.7
110
Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
Min
R 25
Typ
50
3952
Max
Unit
°C/W
V
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

12
APT website – http://www.advancedpower.com
3-6
APTM10HM19FT3– Rev 0
28
17
1
May, 2005
Package outline (dimensions in mm)
APTM10HM19FT3
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
125
VGS=15V, 10V & 9V
250
200
ID, Drain Current (A)
8V
150
7V
100
6V
50
0
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
75
50
T J=25°C
25
T J=125°C
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
8
80
1.6
Normalized to
V GS=10V @ 35A
1.4
VGS=10V
1.2
VGS=20V
1
1
2
3
4
5
6
7
VGS , Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
ID, DC Drain Current (A)
0.8
70
60
50
40
30
20
10
0
0
50
100
150
200
ID, Drain Current (A)
250
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
May, 2005
RDS(on) Drain to Source ON Resistance
T J=-55°C
0
4-6
APTM10HM19FT3– Rev 0
ID, Drain Current (A)
300
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 35A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
0.6
1ms
limited by
RDSon
100
10ms
10
100ms
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=70A
T J=25°C
14
VDS=20V
12
VDS=50V
10
V DS =80V
8
6
4
2
0
0
40
80
120 160 200 240 280
Gate Charge (nC)
May, 2005
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
APT website – http://www.advancedpower.com
5-6
APTM10HM19FT3– Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10HM19FT3
APTM10HM19FT3
Delay Times vs Current
Rise and Fall times vs Current
160
120
80
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
120
100
80
tr
60
20
0
0
0
20
40
60
80
100
ID, Drain Current (A)
0
120
1.5
0.5
Switching Energy (mJ)
VDS=66V
RG=5Ω
TJ =125°C
L=100µH
20
40
60
80
100
ID, Drain Current (A)
120
Switching Energy vs Gate Resistance
Switching Energy vs Current
0.75
Eoff
E on
0.25
0
VDS=66V
ID=70A
TJ=125°C
L=100µH
1
Eoff
0.5
Eon
0
0
20
40
60
80
100
120
0
10
I D, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
200
150
100
VDS=66V
D=50%
R G=5Ω
TJ =125°C
TC =75°C
ZVS
Hard
switching
50
0
13
25
38
50
40
50
60
63
75
1000
TJ=150°C
100
T J=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTM10HM19FT3– Rev 0
May, 2005
I D, Drain Current (A)
30
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
250
20
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
40
20
Eon and Eoff (mJ)
VDS=66V
R G=5Ω
TJ =125°C
L=100µH
140
td(off)
tr and tf (ns)
td(on) and td(off) (ns)
100