MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE CM75TL-24NF ¡IC ..................................................................... 75A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm L A B E L 11 120 106 ±0.5 7 40.78 17 2-φ5.5 MOUNTING HOLES 17 12 13.62 UP VP 1 1 CN 55 35 WP N 12 23 12 23 32 12 23 23.2 12 22 11.75 (13.5) 12 12 (SCREWING DEPTH) +1 W 10.75 (19.75) 22 –0.5 B V 16 8 U 3 1 6-M5 NUTS 1 P A B Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P B CN-7 CN-8 N NC NC NC UP-1 UP-2 VP-1 VP-2 CN-5 CN-6 WP-1 WP-2 W V U CN-3 CN-4 CN-1 CN-2 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 87°C*1 Pulse Ratings 1200 ±20 75 150 75 150 520 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 (Note 2) Pulse TC = 25°C (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Unit V V A A A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 6 7 8 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — 4.2 — 2.1 2.4 — — — 338 — — — — — 3 — — — 0.085 — 0.5 3.0 — 11.5 1.0 0.23 — 100 50 300 350 120 — 3.8 0.24 0.36 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance Tj = 25°C Tj = 125°C IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE = ±15V RG = 4.2Ω, Inductive load IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 External gate resistance — 63 mA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 100 11 50 10 9 0 2 4 6 8 4 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 10 0 50 100 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25°C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 15 13 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V 8 6 4 IC = 150A IC = 75A 2 IC = 30A 0 6 8 10 12 14 16 18 7 5 3 2 102 7 5 3 2 101 20 101 7 5 3 2 Cies 100 7 5 3 2 2 3 4 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 10–1 1 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 7 5 3 2 7 5 3 2 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 150 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Coes Cres VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) td(off) tf 102 7 5 3 2 td(on) Conditions: 101 VCC = 600V tr 7 5 VGE = ±15V R G = 4.2Ω 3 2 Tj = 125°C Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM75TL-24NF NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 102 7 5 Irr trr 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip 2 10–1 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.24K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.36K/W 10–3 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 7 SWITCHING LOSS (mJ/pulse) 102 7 5 3 2 Esw(off) 100 7 Conditions: VCC = 600V Esw(on) VGE = ±15V 3 RG = 4.2Ω Tj = 125°C 2 Inductive load C snubber at bus 5 2 3 5 7 101 2 3 Conditions: VCC = 600V VGE = ±15V 3 IC = 75A Tj = 125°C 2 Inductive load C snubber at bus 101 Esw(off) 7 5 5 3 100 0 10 5 7 102 Esw(on) 2 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 101 102 7 7 5 3 2 Err 100 Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 4.2Ω Tj = 125°C 2 Inductive load C snubber at bus 7 10–1 0 10 10–1 7 5 3 2 101 10–1 0 10 RECOVERY LOSS (mJ/pulse) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 4.2Ω 2 Tj = 25°C Inductive load RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 2 3 5 7 101 2 3 3 2 101 7 EMITTER CURRENT IE (A) Err 5 3 2 100 0 10 5 7 102 Conditions: VCC = 600V VGE = ±15V IE = 75A Tj = 125°C Inductive load C snubber at bus 5 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A VCC = 400V 16 VCC = 600V 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Feb. 2009 5