MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE CM100TU-24F ¡IC ................................................................... 100A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 ±0.25 23 12 4–φ5.5 MOUNTING HOLES CM G E 12 11 G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 0.5 G 48.5 11 14.4 21.7 E 3.75 G U 5–M5NUTS Tc measured point 2.8 11 21.7 E +1 29 –0.5 0.8 11 Tc measured point 8.1 7.1 4 LABEL 26 102 80 ±0.25 11 G 17 P N GuP EuP GvP EvP GwP EwP (4) 3.75 12 P G UP G VP RTC EUP U GUN RTC EUN GWP RTC E VP V GVN RTC E VN RTC E WP W G WN RTC E WN N CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 100 200 100 200 500 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Unit V V A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c’)Q RG Contact thermal resistance — — — — — — — — — — — — — — — — — — 3.1 — 1.8 1.9 — — — 1100 — — — — — 4.1 — — — 0.09 — — 20 2.4 — 39 1.7 1.0 — 100 50 400 300 150 — 3.2 0.25 0.35 — µA VCE(sat) VGE = VCES, VCE = 0V Tj = 25°C IC = 100A, VGE = 15V Tj = 125°C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 600V, I C = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips 0.18✽3 31 mA V nF nC ns ns µC V °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 140 120 9 100 8.5 80 60 40 8 20 0 0.5 1 1.5 2 2.5 3 3.5 3 VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 4 0 40 80 120 160 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 4 3 IC = 200A IC = 100A 2 IC = 40A 1 0 6 8 10 200 103 Tj = 25°C 12 14 16 18 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 15 11 10 160 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 180 0 CAPACITANCE Cies, Coes, Cres (nF) 9.5 Tj = 25°C 7 5 3 2 Tj = 25°C 102 7 5 3 2 101 7 5 3 2 100 0.5 20 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 7 5 3 2 Cies 3 2 101 7 5 3 2 100 Coes 7 5 3 2 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) 200 tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE 103 7 5 3 2 102 Irr trr 7 5 3 2 101 0 10 2 3 5 7 101 Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.25°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.35°C/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 100A 18 16 14 VCC = 400V 12 VCC = 600V 10 8 6 4 2 0 0 500 1000 1500 GATE CHARGE QG (nC) Aug. 1999