Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PINNING - SOT404 PIN PHB50N06T QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V PIN CONFIGURATION MAX. UNIT 55 50 125 175 24 V A W ˚C mΩ SYMBOL DESCRIPTION d mb 1 gate 2 drain 3 source mb drain g 2 1 s 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - - 55 55 55 20 50 35 200 125 175 V V V A A A W ˚C MIN. MAX. UNIT - 2 kV TYP. MAX. UNIT - 1.2 K/W 50 - K/W ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage, all pins Human body model (100 pF, 1.5 kΩ) THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient - Rth j-a November 1997 Minimum footprint, FR4 board 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N06T STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage VGS = 0 V; ID = 0.25 mA; VGS(TO) Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V IGSS Gate source leakage current ±V(BR)GSS RDS(ON) Gate source breakdown voltage IG = ±1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance Tj = 175˚C Tj = 175˚C Tj = 175˚C MIN. TYP. MAX. UNIT 55 50 2.0 1.0 16 - 3.0 0.05 0.02 19 - 4.0 4.4 10 500 1 20 24 50 V V V V µA µA µA µA V mΩ mΩ MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 25 A 4 11 - S Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 50 A; VDD = 44 V; VGS = 10 V - 30 6 12 - nC nC nC Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1100 280 130 1500 340 180 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Ω Resistive load - 12 19 25 18 18 35 35 25 ns ns ns ns Ld Internal drain inductance - 2.5 - nH Ls Internal source inductance Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT - - 50 A IF = 25 A; VGS = 0 V IF = 40 A; VGS = 0 V - 0.95 1.0 200 1.2 - A V IF = 40 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V - 40 0.07 - ns µC REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IDR IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge November 1997 CONDITIONS 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N06T AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 40 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C November 1997 3 MIN. TYP. MAX. UNIT - - 80 mJ Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET 120 PHB50N06T Normalised Power Derating PD% 10 Transient thermal impedance, Zth (K/W) 110 100 90 1 0.5 80 0.2 0.1 0.05 70 60 0.1 50 0.02 PD 40 30 tp D= tp T 0 0.01 20 t T 10 0 0 20 40 60 80 100 Tmb / C 120 140 160 0.001 180 10us Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 0.1s 10s Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% 1ms pulse width, tp (s) 100 110 9 10 16 12 ID/A VGS/V = 8.5 100 80 8.0 90 80 7.5 60 70 7.0 60 50 6.5 40 40 30 6.0 20 20 5.5 10 5.0 4.5 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V 1000 ID / A 0 2 4 6 8 10 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 7524-55 40 RDS(ON)/mOhm VGS/V = 6 6.5 35 RDS(ON) = VDS / ID 100 VSD/V 7 tp = 10 us 30 8 100 us 9 25 10 10 1 ms DC 10 ms 100 ms 1 1 10 100 20 15 1000 VDS / V Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp November 1997 0 10 20 30 40 ID/A 50 60 70 80 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N06T 100 VGS(TO) / V 5 BUK759-60 ID/A max. 80 4 typ. 60 3 40 2 min. 1 20 Tj/C = 175 0 0 2 4 25 6 VGS/V 8 10 0 -100 12 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj -50 0 50 Tj / C 100 150 200 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 25 Sub-Threshold Conduction 1E-01 gfs/S 20 1E-02 15 10 typ 98% 1E-04 5 0 2% 1E-03 1E-05 0 20 40 ID/A 60 80 1E-06 100 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V 2.5 BUK959-60 a 0 1 2 3 4 5 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 3 Rds(on) normlised to 25degC Thousands pF 2.5 2 1.5 2 1.5 1 1 5 0.5 -100 -50 0 50 Tmb / degC 100 150 0 0.01 200 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V November 1997 0.1 1 VDS/V 10 100 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N06T 12 120 VGS/V WDSS% 110 10 100 VDS = 14V 90 VDS = 44V 8 80 70 6 60 50 40 4 30 20 2 10 0 0 0 5 10 15 20 QG/nC 25 30 20 35 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS 40 60 80 100 120 Tmb / C 140 160 180 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A 100 VDD + IF/A 80 L VDS 60 - VGS -ID/100 40 Tj/C = 175 0 25 20 0 T.U.T. R 01 shunt RGS 0 0.5 VSDS/V 1 1.5 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj + VDD RD VDS - VGS 0 RG T.U.T. Fig.17. Switching test circuit. November 1997 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N06T MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.18. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". November 1997 7 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET PHB50N06T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1997 8 Rev 1.100