Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications. PINNING - SOT223 PIN BUK7880-55 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V PIN CONFIGURATION MAX. UNIT 55 7.5 1.8 150 80 V A W ˚C mΩ SYMBOL DESCRIPTION d 4 1 gate 2 drain 3 source 4 drain (tab) g 2 1 s 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDS VDGR ±VGS ID ID Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) ID Drain current (DC) IDM Ptot Ptot Drain current (pulse peak value) Total power dissipation Total power dissipation Tstg, Tj Storage & operating temperature RGS = 20 kΩ Tsp = 25 ˚C On PCB in Fig.2 Tamb = 25 ˚C On PCB in Fig.2 Tamb = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C On PCB in Fig.2 Tamb = 25 ˚C - MIN. MAX. UNIT - 55 55 16 7.5 3.5 V V V A A - 2.2 A - 40 8.3 1.8 A W W - 55 150 ˚C MIN. MAX. UNIT - 2 kV ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model (100 pF, 1.5 kΩ) April 1998 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-sp Rth j-amb From junction to solder point From junction to ambient Mounted on any PCB Mounted on PCB of Fig.18 TYP. MAX. UNIT 12 - 15 70 K/W K/W STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage Gate threshold voltage VGS = 0 V; ID = 0.25 mA VGS(TO) Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 150˚C Tj = -55˚C IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; IGSS Gate source leakage current VGS = ±10 V ±V(BR)GSS Gate-source breakdown voltage Drain-source on-state resistance IG = ±1 mA; RDS(ON) Tj = 150˚C Tj = 150˚C VGS = 10 V; ID = 5 A Tj = 150˚C MIN. TYP. MAX. UNIT 55 50 2 1.2 16 3 0.05 0.04 - 4 4.4 10 100 1 10 - V V V V µA µA µA µA V - 65 - 80 148 mΩ mΩ MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 5 A; Tj = 25˚C 1 4 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 365 110 60 500 135 85 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 7 A; VGS = 10 V; RG = 10 Ω; - 9 15 18 12 14 25 27 18 ns ns ns ns MIN. TYP. MAX. UNIT Tj = 25˚C REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = -55 to 175˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR Tsp = 25˚C - - 7.5 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Tsp = 25˚C IF = 5 A; VGS = 0 V - 0.85 40 1.1 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 5 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V - 38 0.2 - ns µC April 1998 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS WDSS Drain-source non-repetitive unclamped inductive turn-off energy ID = 2.5 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C Normalised Power Derating PD% 120 MIN. TYP. MAX. UNIT - - 30 mJ 100 ID/A 110 100 90 RDS(ON) = VDS/ID 80 tp = 1 us 10us 10 70 100 us 60 50 1 ms DC 40 1 30 10ms 20 10 100ms 0 0 20 40 60 80 100 Tmb / C 120 140 0.1 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tsp) 10 100 VDS/V Fig.3. Safe operating area. Tsp = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Normalised Current Derating ID% 120 1 100 Zth/ (K/W) 110 100 90 10 0.5 80 0.2 70 60 50 1 0.1 0.05 0.02 40 30 PD tp D= 0.1 20 10 tp T t T 0 0 20 40 60 80 Tmb / C 100 120 140 0.01 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V April 1998 1.0E-06 0.0001 t/s 0.01 1 100 Fig.4. Transient thermal impedance. Zth j-sp = f(t); parameter D = tp/T 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET 40 BUK7880-55 9 gfs/S 16 ID/A 12 9.5 10 9.0 30 8 8.5 7 8.0 6 7.5 20 7.0 5 6.5 4 6.0 10 5.5 0 0 2 4 VDS/V 6 8 10 3 5.0 4.5 4.0 2 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS 130 0 10 ID/A 15 20 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V RDS(ON)/mOhm 2.5 120 5 BUK98XX-55 a Rds(on) normalised to 25degC 6 2 110 6.5 7 100 8 90 1.5 9 10 80 1 70 60 0 5 10 ID/A 15 20 25 0.5 -100 30 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS -50 0 50 Tmb / degC 100 150 200 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V 20 5 VGS(TO) / V ID/A BUK78xx-55 max. 4 15 typ. 3 10 min. 2 5 1 0 0 1 25 150 Tj/C = 2 3 4 5 VGS/V 6 7 8 0 -100 9 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj April 1998 -50 0 50 Tj / C 100 150 200 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 40 Sub-Threshold Conduction 1E-01 IF/A 1E-02 30 2% 1E-03 typ Tj/V = 98% 25 150 20 1E-04 10 1E-05 1E-06 0 0 1 2 3 4 5 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 0.5 1 VSDS/V 1.5 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj 1 Thousands pF 0 .9 120 110 .8 100 WDSS% 90 .7 80 .6 70 60 .5 50 Ciss .4 40 .3 30 .2 20 10 .1 0 0.01 0.1 1 Coss Crss 100 10 VDS/V 0 20 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 40 60 80 100 Tmb / C 120 140 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tsp); conditions: ID = 2.5 A 12 VDS/V VDD + 10 L VDS = 14V 8 VDS - VDS = 44V VGS 6 -ID/100 0 4 RGS 2 0 T.U.T. 0 5 QG/nC 10 15 Fig.16. Avalanche energy test circuit. WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD ) Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 7 A; parameter VDS April 1998 R 01 shunt 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 + VDD RD VDS - VGS 0 RG T.U.T. Fig.17. Switching test circuit. April 1998 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 4.5 4.6 9 10 7 15 50 Fig.18. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). April 1998 7 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 MECHANICAL DATA Dimensions in mm 6.7 6.3 Net Mass: 0.11 g B 3.1 2.9 0.32 0.24 0.2 4 A A 0.10 0.02 16 max M 7.3 6.7 3.7 3.3 13 2 1 10 max 1.8 max 1.05 0.80 2.3 0.60 0.85 4.6 3 0.1 M B (4x) Fig.19. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". April 1998 8 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7880-55 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 9 Rev 1.100