星合电子 1N5712 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES DO-35 FEATURES Metal-on-silicon junction High breakdown voltage Low turn-on voltage 1.083(27.5) MIN Ultrafast switching speed Primarily intended for high level UHF/VHF detectionand pulse applications 0.079(2.0) MAX DIA with broad dynamic range The diode is also available in the MiniMELF case with type designation LL5712. 0.150(3.8) MAX High temperature soldering guaranteed:260℃/10 seconds at terminals MECHANICAL DATA 1.083(27.5) MIN 0.020(0.52) MAX DIA Case: DO-35 glass case Polarity: color band denotes cathode end Dimensions in inches and (millimeters) Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Peak Reverse Voltage Value VRRM 20 V 430 35 mW mA -55 to+150 C 230 C Ptot IF TJ/TSTG TL Power Dissipation (infinite Heat Sink) Forward Continuous Current Junction and Storage temperature range Maximum Lead Temperature for Soldering during 10S at 4mm from Case Units Symbols ELECTRICAL CHARACTERISTICS Symbols Reverse breakover voltage at IR=10mA Min. VR Typ. Max. 20 Unis V Leakage current at VR=15V IR 100 nA Forward voltage drop at IF=1mA Test pulse: tp ≤ 300ms d ＜ 2% IF=35mA VF VF 0.55 1.0 V V CJ 1.2 PF RqJA 400 K/W Junction Capacitance at VR=0V ,f=1MHz Thermal resistance 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 1N5712 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES Figure 1. forward current versus forward voltage at different temperatures(typical values) Figure 2. forward current versus forward voltage (typical values) IF(mA) 10 IF(mA) 2 30 Tamb= 25 C 25 10 20 15 1 Tamb=150 C Tamb= 25 C Tamb= -55 C 10 10 -1 5 10 -2 0 0.2 0.4 0.6 0.8 1 0 1.2 VF(V) 0.2 0.4 0.6 0.8 1 VF(V) Figure 3.Reverse current versus ambient temperature IR(mA) 10 2 90% confidence VR=15V 10 max. typ. 1 10 -1 10 -2 10 -3 0 25 50 75 100 125 150 Tamb=( C) 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 1N5712 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES Figure 4.Reverse current versus continuous Reverse voltage(typical values) IR(mA) 10 2 150 C 10 125 C 100 C 1 75 C 10 -1 10 -2 10 -3 50 C 25 C 0 25 50 75 100 125 150 VR(V) Figure 5.Capacitance C versus revers applied voltage VR (typical values) CJ(pF) 1.5 1.25 Tamb= 25 C 1 0.75 0.5 0.25 0 5 15 10 20 VR(V) 3 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７