星合电子 SD101A TH RU SD101C ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES DO-35 FEATURES For general purpose applications The SD101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast 1.083(27.5) MIN switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. 0.079(2.0) MAX DIA These diodes are also available in the MiniMELF case with the type designation LL101A to LL101C. 0.150(3.8) MAX High temperature soldering guaranteed:260℃/10 seconds at terminals MECHANICAL DATA 1.083(27.5) MIN Case: DO-35 glass case Polarity: Color band denotes cathode end 0.020(0.52) MAX DIA Weight: Approx. 0.05 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Peak Reverse Voltage VRRM VRRM VRRM Ptot IFSM TJ TSTG SD101A SD101B SD101C Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range Units 60 50 40 2.0 V V mW A 125 C -55 to+150 C 400 1) 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbols Reverse breakover voltage at IR=10mA Leakage current at VR=50V VR=40V VR=30V Forward voltage drop at IF=1mA IF=15mA Junction Capacitance at VR=0V ,f=1MHz SD101A SD101B SD101C SD101A SD101B SD101C VR VR VR IR IR IR SD101A SD101B SD101C SD101A SD101B SD101C VF VF VF VF VF VF SD101A SD101B SD101C CJ CJ CJ Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR Thermal resistance,junction to Ambient Min. Typ. Max. V V V 60 50 40 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 trr 300 1) RqJA Unis nA nA nA V V V V V V pF pF pF ns K/W 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 SD101A TH RU SD101C ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SMALL SIGNAL SCHOTTKY DIODES Figure 2. Typical forward conduction curve of combination Schottky barrier and PN junction guard ring Figure 1. Typical variation of fwd.current vs.fwd. Voltage for primary conduction through the schottky barrier mA mA 100 10 5 A B A B C 2 C 80 1 5 60 2 IF IF 40 0.1 5 20 2 0.01 0.5 0 1V 0.5 0 VF 1V VF Figure 4. Typical capacitance curve as a function of reverse voltage Figure 3.Typical variation of reverse current at various temperatures pF μA 100 2 150 C 5 125 C 2 100 C 10 5 75 C 2 IR B A 1 C 1 50 C CJ 5 2 0.1 25 C 5 2 0.01 0 10 20 30 40 50V 0 VR 10 20 30 40 50V VR 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７