星合电子 BAS21M3 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ◇ ◇ ◇ ◇ ◇ ◇ ◇ High Voltage Switching Diode / DATA SHEET General purpose diodes High Voltage / Fast switching devices SOD323F Thin SMD package (Fig-1) RoHS compliant / Green EMC Matte Tin (Sn) Lead finish Moisture Level Sensitivity 1 Cathode Band / Device marking S4 Device Marking Code BAS21M3 S4 0.65mm Typ Fig.-1 Package. height Absolute Maximum Ratings （Ta = 25 ℃） Symbol Value Units VRSM Non-Repetitive Peak Reverse Voltage 300 V VRRM Repetitive Peak Reverse Voltage 250 V IFRM Repetitive Peak Forward Current 625 mA IFSM *1 Parameter Non-Repetitive Peak Forward Current *1 4 A IO Continuous Forward Current 200 mA PD Power Dissipation 250 mW TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55 to +150 ℃ Pulse width = 1μs Electrical Characteristics （Ta = 25 ℃） Symbol BVR IR Parameter Conditions Breakdown Voltage IR = 100μA Reverse Current VR = 250V VR = 200V (Ta = 150℃) VF Forward Voltage IF = 100mA IF = 200mA C TRR Min Max 250 Units V 150 100 nA μA 1.0 1.25 V V Capacitance VR = 0V, f = 1MHz 5 pF Reverse Recovery Time IF = IR = 30mA, 50 ns IRR = 3mA, RL = 100Ω 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 BAS21M3 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ High Voltage Switching Diode / DATA SHEET Ordering Information Device Package Shipping BAS21M3 SOD323F Tape & Reel 3000pcs /7” Reel Tape wide Emboss pitch Tape specification 8 mm 4 mm Conductive Notes Package Dimensions ( U nit : m m ) ( U nit : m m ) 0.8 0.8 1.25 ± 0.10 0.30 + 0.10 - 0.05 3.0 to 3.2 2.50 ± 0.20 Lan d P attern R ecom m en dation 0.11 + 0.10 - 0.05 0.65 + 0.10 - 0.05 1.70 ± 0.10 S O D 323F * N otes: D im ensions of P O P P U LA (JED EC /JEIT A : S O D -323/S C -90) * (0.4) P ackage O utline 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７