GXELECTRONICS LL60P

星合电子
LL60, LL60P
XINGHE ELECTRONICS
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction, majority carrier conduction
MiniMELF
High current capability, Low forward voltage drop
Extremely low reverse current I R
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
0.063(1.6)
0.055(1.4)
Satisfactory w ave detection efficiency
For use in recorder, TV ,radio and telephone as detectors
0.019(0.48)
0.011(0.28)
Super high speed switching cirits, small current rectifier
0.142(3.6)
0.134(3.4)
High temperature soldering guaranteed:260℃/10 seconds at terminals
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Parameters
Symblos
VRRM
IF
IFSM
TSTG/TJ
TL
LL60
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA=25 C
40
40
30
50
150
Peak Forward Surge Current(t=1s)
Units
LL60P
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
Volts
mA
mA
400
-55 to+125
C
260
C
ELECTRICAL CHARACTERISTICS
Value
Symblos
Parameters
Test Conditions
IF=1mA
VF
Forward Voltage
IR
Reverse Current
CJ
Junction Capacitance
h
Detection Efficiency(See diagram 4)
trr
Reverse Recovery time
RqJA
Junction Ambient Thermal Resistance
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
Min.
LL60
LL60P
LL60
LL60P
LL60
LL60P
LL60
LL60P
VI=3V f=30MHz CL=10pF RL=3.8kW
Typ.
0.35
0.26
0.70
0.70
1.0
5.0
4.0
Max.
0.5
0.5
1.0
1.0
5.0
10.0
mA
%
60
1
400
Volts
pF
10.0
IF=IR=1mA Irr=1mA Rc=100W
Units
ns
C/W
1
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
星合电子
LL60, LL60P
XINGHE ELECTRONICS
SMALL SIGNAL SCHOTTKY DIODES
FIG.1-FORWARD CURRENT VERSUS FORWARD
VOLTAGE (TYPICAL VALUES)
FIG.2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE
IR(uA)
IF(mA)
1.40
100
90
1.20
80
1.00
70
60
0.80
50
0.60
40
30
0.40
20
0.20
10
0.2
0
0.4
0.6
0.8
0
1.0 VF(V)
5
10
15
20
25
30
VR(V)
FIG.4-DETECTION EFFICIENCY MEASUREMENT
CIRCUIT
FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
CJ(pF)
4.0
output
3.5
D.U.T.
3.0
2.5
~
~
~
2.0
Input:3VRMS
CL
10pF
RL
3.8kW
1.5
1.0
0.5
0
1
2
3
4
5
6
VR(V)
2
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
星合电子
LL60, LL60P
XINGHE ELECTRONICS
SMALL SIGNAL SCHOTTKY DIODES
FIG.1-FORWARD CURRENT VERSUS FORWARD
VOLTAGE (TYPICAL VALUES)
FIG.2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE
IR(uA)
IF(mA)
0.70
500
450
0.60
400
0.50
350
300
0.40
250
0.30
200
150
0.20
100
0.10
50
0
0.2
0.4
0.6
0
1.0 VF(V)
0.8
5
10
15
20
25
30
VR(V)
FIG.4-DETECTION EFFICIENCY MEASUREMENT
CIRCUIT
FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
C(pF)
20
18
output
16
D.U.T.
14
12
~
~
~
10
Input:3VRMS
CL
10pF
RL
3.8kW
8
6
0
1
2
3
4
5
6
VR(V)
3
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017