GXELECTRONICS RB551M3-30

星合电子
RB551M3-30
XINGHE ELECTRONICS
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Schottky Barrier Diode / DATA SHEET
Low Forward Voltage Schottky Rectifier
SOD323F Thin SMD package (Fig-1)
RoHS compliant / Green EMC
Matte Tin (Sn) Lead finish
Moisture Level Sensitivity 1
Cathode Band / Device marking
C1
Device Marking Code
RB551M3-30
C1
0.65mm Typ
Fig.-1 Package SOD323F
Absolute Maximum Ratings (Ta = 25 ℃)
Symbol
Value
Units
Repetitive Peak Reverse Voltage
30
V
VR
DC Blocking Voltage
20
V
IO
Continuous Forward Current
500
mA
VRRM
*1
Parameter
*1
IFSM
Non-Repetitive Peak Forward Current
5
A
PD
Power Dissipation
200
mW
TJ
Junction Temperature
125
℃
TSTG
Storage Temperature
-55 to +125
℃
8.3 ms single half sine-wave
Electrical Characteristics (Ta = 25 ℃)
Symbol
BVR
Parameter
Conditions
Min
Max
30
Units
V
Breakdown Voltage
IR = 500μA
IR
Reverse Current
VR = 20V
100
μA
VF
Forward Voltage
IF = 100mA
0.36
0.47
V
V
IF = 500mA
1
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
星合电子
RB551M3-30
XINGHE ELECTRONICS
Schottky Barrier Diode / DATA SHEET
Ordering Information
Device
Package
Shipping
RB551M3-30
SOD323F
Tape & Reel
3000pcs /7” Reel
Tape
wide
Emboss
pitch
Tape
specification
8 mm
4 mm
Conductive
Notes
Package Dimensions
( U nit : m m )
( U nit : m m )
0.8
0.8
1.25 ± 0.10
0.30 + 0.10
- 0.05
3.0 to 3.2
2.50 ± 0.20
Lan d P attern R ecom m en dation
0.11 + 0.10
- 0.05
0.65 + 0.10
- 0.05
1.70 ± 0.10
S O D 323F
*
N otes:
D im ensions of P O P P U LA
(JED EC /JEIT A : S O D -323/S C -90)
*
(0.4)
P ackage O utline
2
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017