RoHS LL60/LL60P D T ,. L Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications IC Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings R T Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage C E L Peak forward surge current Forward continuous current tp 1 s Ta=25℃ E O N Type Symbol Value Unit LL60 VRRM 40 V LL60P VRRM 45 V LL60 IFSM 150 mA LL60P IFSM 500 mA LL60 IF 30 mA LL60P IF 50 mA Tstg -65~+125 ℃ Storage temperature range J E C O Maximum Thermal Resistance Tj=25℃ Parameter W Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 250 K/W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS LL60/LL60P Electrical Characteristics D T ,. L Tj=25℃ Parameter Forward voltage Test Conditions IF=1mA Reverse current Junction capacitance Max Unit 0.32 0.5 V LL60P VF 0.24 0.5 V IF=30mA LL60 VF 0.65 1.0 V IF=200mA LL60P VF 0.65 1.0 V VR=15V LL60 IR 0.1 0.5 μA LL60P IR 0.5 1.0 μA VR=1V, f=1MHz LL60 CJ VR=10V, f=1MHz LL60P CJ Cathode identification R T W Typ VF IF=IR=1mA Irr=1mA RC=100 C E L E Min LL60 trr Dimensions in mm J E Symbol O IC C O 2.0 6.0 1.0 pF pF ns N Φ1.5±0.1 Reverse recovery time Type 0.3 3.5±0.2 Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]