June 1996 LMX2119 1.9 GHz Power Amplifier General Description Features The LMX2119 1.9 GHz Power Amplifier is a monolithic, integrated power amplifier suitable for use in the Digital European Cordless Telecommunications (DECT) system as well as other mobile telephony and wireless communications applications. It is fabricated using an advanced Gallium Arsenide technology that allows single supply ( a 3V) operation. The LMX2119 consists of two MESFETs cascaded to provide 24.5 dB of power gain. The output power at 3.6V is a 26.5 dBm with an input power level of a 2 dBm. The input VSWR of the power amplifier remains constant in the ON and OFF state. The LMX2119 is available in a 16-pin SOIC surface mount plastic package. Y Y Y Y Y Single a 3V supply operation Class A bias; l30% power added efficiency 24.5 dB power gain; a 26.5 dBm output power 50X input/output impedance 350 mA current consumption at a 3.6V Applications Y Y Y Y Digital European Cordless Telecommunications (DECT) Portable wireless communications (PCS/PCN, cordless) Wireless local area networks (WLANs) Other wireless communications systems Functional Block Diagram TL/W/12686 – 1 This data sheet contains the design specifications for product development. Specifications may change in any manner without notice. C1996 National Semiconductor Corporation TL/W/12686 RRD-B30M27/Printed in U. S. A. http://www.national.com LMX2119 1.9 GHz Power Amplifier PRELIMINARY LMX2119 Connection Diagram Small Outline Package (SOP) TL/W/12686 – 2 Top View Order Number LMX2119M See NS Package Number M16A Pin Description Pin No. Pin Name 1 N/C 2 a VDD1 3 GND Ground. 4 GND Ground. 5 RF In 6 GND Ground. 7 GND Ground. 8 N/C No Connect. 9 N/C No Connect. 10 GND Ground. 11 GND 12 RF Out 13 GND 14 GND 15 a VDD2 16 N/C http://www.national.com I/O Description No Connect. Positive supply voltage. VDD1 must equal VDD2. Decoupling capacitors should be placed as close to the pin as possible. I RF input to the power amplifier. Ground. O Power amplifier’s RF output. Ground. Ground. Positive supply voltage. VDD2 must equal VDD1. Decoupling capacitors should be placed as close to the pin as possible. No Connect. 2 Absolute Maximum Ratings Supply Voltage (VDD) RF Input Power (PIN) Storage Temperature (TSTG) ESD Rating (Note) Recommended Operating Conditions 5.5V 6 mW Supply Voltage, VDD1 e VDD2 Operating Temperature (TA) RF Input Power, PIN b 40§ C to a 150§ C k 2 keV Note: This device is a high performance RF integrated circuit with an ESD Rating k 2 keV, and is ESD sensitive. Handling and assembly of this device should only be done at ESD workstations. Min 3.0 b 25 0 Typ 3.6 a2 Max 4.6 a 65 a4 Units V §C dBm Electrical Characteristics (The following specifications are guaranteed for VDD1 e VDD2 e 3.6V, TA e 25§ C, 50X system unless otherwise specified.) Symbol Parameter Conditions Frequency Range POUT Value Typ 1880 Output Power PIN e 1.0 mW–2.5 mW Isolation PA off (VDD1 e VDD2 e 0V) 25.5 Max 1900 MHz 27.5 dBm 0.2 0.5 dB mA dB Current Consumption POUT e 450 mW, PIN e 1.6 mW 350 420 Input VSWR, PA On POUT e 450 mW, PIN e 1.6 mW 1.6:1 2.0:1 Input VSWR, PA Off VDD1 e VDD2 e 0V, PIN e 1.6 mW 1.4:1 2.0:1 Load Mismatch (Note 1) VDD1 e VDD2 e 4.6V, VSWR e 10:1, PIN e 6 mW Stability (Note 2) PIN e 0–3 mW, VDD1,2 e 0 – 4.6V, 0 mW k POUT k 450 mW, Load VSWR e 10:1 Unit 26.5 40 Frequency Dependency PIN e 1.0 mW–2.5 mW IDD Min No Degradation in Output Power All Non-Harmonically Related Outputs More Than 60 dB Below Desired Signal Note 1: The device is adjusted to provide maximum load power into a 50X load under stress conditions specified by adjusting VDD1. The device is switched off and a 10:1 load replaces the 50X load. The device is switched on and the phase of the 10:1 load is varied through 360 electrical degrees during a 60 second test period. The device is switched off and the load is restored to 50X. When the device is switched on, no change in load power is permitted. The pre and post load power measurements are recorded after a 5 minute stabilization period. This parameter is not tested in production but is guaranteed by design and characterization. Note 2: The device is adjusted to provide 400 mW of load power into a 50X load by changing and recording the value of the supply voltage. The device is switched off and a 10:1 load replaces the 50X load. The device is switched on and the phase of the 10:1 load is varied through 360 electrical degrees during a 60 second test period. The value of VDD1 e VDD2 is adjusted from the initial value to a lower value greater than 0V. The phase of the 10:1 load is varied through 360 electrical degrees during a 60 second test period. For any value of the supply voltage between 0V and the initial setting, the non-harmonically related output signals shall be as specified herein for any electrical phase. This parameter is not tested in production but is guaranteed by design and characterization. 3 http://www.national.com Typical Application Block Diagram TL/W/12686 – 3 Typical Performance Characteristics Output Power and Supply Current vs Input Power Output Power and Supply Current vs Frequency TL/W/12686 – 4 TL/W/12686 – 5 Power Ramping Characteristic (See Application Circuit) Input VSWR vs Frequency TL/W/12686 – 6 http://www.national.com TL/W/12686 – 7 4 Typical Performance Characteristics Output Power and Supply Current vs Supply Voltage (Continued) Power Amplifier Harmonics TL/W/12686 – 8 TL/W/12686 – 9 Output Power and Supply Current vs Frequency for TA e b40§ C Output Power and Supply Current vs Frequency for TA e a 75§ C TL/W/12686 – 10 TL/W/12686 – 11 Output Power and Supply Current vs Temperature Maximum Operating Temperature Chart (50% Duty Cycle) TL/W/12686 – 12 TL/W/12686 – 13 5 http://www.national.com LMX2119 1.9 GHz Power Amplifier Physical Dimensions inches (millimeters) unless otherwise noted JEDEC 16-Lead (0.150× Wide) Small Outline Molded Package (M) Order Number LMX2119M For Tape and Reel (2500 Units per Reel) Order Number LMX2119MX NS Package Number M16A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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