FAIRCHILD RMWB11001

RMWB11001
11 GHz Buffer Amplifier MMIC
General Description
Features
The RMWB11001 is a 2-stage GaAs MMIC amplifier
designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild RF amplifiers, multipliers and mixers it forms part
of a complete 38 GHz transmit/receive chipset. The
RMWB11001 utilizes our 0.25µm power PHEMT process
and is sufficiently versatile to serve in a variety of medium
power amplifier applications.
•
•
•
•
•
4 mil substrate
Small-signal gain 21dB (typ.)
Saturated Power Out 19dBm (typ.)
Voltage Detector Included to Monitor Pout
Chip size 2.0mm x 1.3mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
RJC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
©2004 Fairchild Semiconductor Corporation
Ratings
+6
-2
8
104
+8
-30 to +85
-55 to +125
180
Units
V
V
V
mA
dBm
°C
°C
°C/W
RMWB11001 Rev. C
RMWB11001
June 2004
Parameter
Frequency Range
Gate Supply Voltage1 (Vg)
Gain Small Signal (Pin = -10dBm)
Gain Variation vs. Frequency
Power Output Saturated: (Pin = 2dBm)
Drain Current at Psat (Pin = 2dBm)
Power Added Efficiency (PAE): at Psat
Input Return Loss (Pin = -10dBm)
Output Return Loss (Pin = -10dBm)
Noise Figure
Detector Voltage (Pout = +18dBm)
Min
10.5
18
Typ
Max
11.7
-0.5
21
0.5
17
19
55
35
13
18
4
0.5
Units
GHz
V
dB
dB
dBm
mA
%
dB
dB
dB
V
Note:
1: Typical range of gate voltage is -0.8 to 0.2V to set typical Idq of 36mA.
Functional Block Diagram1
Drain Supply Drain Supply
Vd1
Vd2
MMIC Chip
RF IN
RF OUT
Ground
(Back of Chip)
Gate Supply
Vg
Output Power
Detector Voltage Vdet
Note:
1: Detector delivers approx. 0.5V DC into 3kΩ load resistor for > +18dBm output power. If output power level detection is not desired, do not make connection to
detector bond pad.
©2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C
RMWB11001
Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current (Idq) = 36mA
0.0 0.11
0.577
2.0
1.3
1.3
1.145
0.873
0.873
0.720
0.720
0.567
0.567
0.106
0.0
0.0
0.5
0.0
0.65
1.828
2.0
Chip Size is 2.0mm x 1.3mm X 100µm. Back of chip is RF and DC Ground.
Figure 2. Recommended Application Schematic Circuit Diagram
Drain Supply
Vd=+4 V
L = Bond Wire
Inductance
100pF
10,000pF
L
L 100pF
L
L
RF IN
RF OUT
MMIC Chip
L
L
100pF
Ground
(Back of Chip)
L
Gate
Supply
Vg
©2004 Fairchild Semiconductor Corporation
100pF
3 kΩ
10,000pF Output Power
Detector Voltage
Vdet
Note : Detector delivers approx.
0.5V DC into 3kΩ load resistor
for >+18 dBm output power. If
output power level detection is
not desired, do not make
connection to detector bond
pad.
RMWB11001 Rev. C
RMWB11001
Figure 1. Chip Layout and Bond Pad Locations
RMWB11001
Figure 3. Recommended Assembly Diagram
Vd
(Positive)
10,000pF
Die-Attach
80Au/20Sn
100pF
100pF
5 mil Thick
Alumina
50Ω
5mil Thick
Alumina
50Ω
RF
Input
RF
Output
100pF
2 mil Gap
100pF
10,000pF
L< 0.015”
(4 Places)
3KΩ
Vg (Negative)
Vdet (Positive)
Notes:
Use 0.003" by 0.0005" Gold Ribbon for bonding.RF input and output bonds should be less than 0.015" long with stress relief. Detector delivers approx. 0.5V DC into
3 kΩ load resistor for >+18 dBm output power. If output power level detection is not desired do not make connection to detector bond pad.
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs
compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper
tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of
withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy
solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated
and is used as RF and DC ground.
These GaAs devices should be handled with care and
stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and
should be handled with appropriate precaution including the
use of wrist grounding straps. All die attach and wire/ribbon
bond equipment must be well grounded to prevent static
discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil
thick gold ribbon with lengths as short as practical allowing
for appropriate stress relief. The RF input and output bonds
should be typically 0.012" long corresponding to a typical 2
mil gap between the chip and the substrate material.
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias
supply voltage of -1.5V to Vg.
©2004 Fairchild Semiconductor Corporation
Step 3: Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 36mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
RMWB11001 Rev. C
RMWB11001
Performance Data
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Chip Bonded into 50Ω Test Fixture
RMWB11001, 11GHz Buffer Amplifier, Typical Performance
On-wafer Measurements, Vd=4V, Idq=36mA
0
25
30
10
20
15
-10
S11
-15
10
0
0
-10
-5
S11
-20
S22
-30
S22
-10
-40
-20
5
5
S21
10
S11, S22 (dB)
-5
S21 (dB)
20
S11, S22 (dB)
S21 (dB)
S21
-15
-50
0
9.5
10
10.5
11
Frequency (GHz)
11.5
-25
12
-60
0
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Chip Bonded into 50Ω Test Fixture
15
20
25
Frequency (GHz)
30
35
-20
40
1
Detector DC Voltage (V)
0.9
20
15
Pout @ 10.5GHz
Gain @ 10.5GHz
Pout @ 11.1GHz
Gain @ 11.1GHz
Pout @ 11.7GHz
Gain @ 11.7GHz
10
5
-16
-12
-8
-4
Input Power (dBm)
0
20
19
18
17
16
11
11.25
11.5
Frequency (GHz)
©2004 Fairchild Semiconductor Corporation
11.75
0.7
0.6
0.5
0.4
0.3
0.2
0
10.5
4
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq=36mA, Chip Bonded into 50Ω Test Fixture
21
15
10.75
0.8
0.1
12
Output Power at 3dB Compression (dBm)
Output Power (dBm), Gain (dB)
10
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Detector Voltage into 3kΩ load at Pout=+18dBm
25
Gain at 3dB Compression (dB)
5
10.7
10.9
11.1
11.3
Frequency (GHz)
11.5
11.7
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq=36mA, Chip Bonded into 50Ω Test Fixture
19
18
17
16
15
10.75
11
11.25
11.5
Frequency (GHz)
11.75
12
RMWB11001 Rev. C
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11