Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device contains two enhancement mode MESFETs connected in cascode to allow access to both gates for gain control or injection of LO signals. This device is well suited for low voltage, low current front–end applications such as paging, cellular, GSM, DECT, and other portable wireless systems. • Low Noise Figure: 1.5 dB @ 940 MHz, 1 mA • Built In ESD Protection • Does Not Require a Negative Supply Voltage • RF Power Gain 16 dB @ 940 MHz, 1 mA • High Third Order Intercept Point • Industry Standard SOT–143 Surface Mount Package • Order MRF9820T1 for Tape and Reel Packaging. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. SURFACE MOUNT LOW NOISE ENHANCEMENT MODE GaAs CASCODE CASE 318A–05, STYLE 11 (SOT–143) MAXIMUM RATINGS Rating Symbol Value Unit VDS 6 Vdc Gate 1–Source Voltage VG1S –4 Vdc Gate 2–Source Voltage Drain–Source Voltage VG2S –4 Vdc Drain Current — Continuous ID IDSS — Total Device Dissipation @ TC = 75°C Derate above 75°C PD 231 4.3 mW mW/°C Storage Temperature Range Tstg – 55 to +150 °C Operating Channel Temperature Tch 150 °C Symbol Max Unit Rθch–C 325 °C/W Symbol Value Unit Gate 1 Leakage Current (VDS = 2 V, VG1S = 0.425 V, VG2S = 1 V) IG1S 4 µA Gate 2 Leakage Current (VDS = 2 V, VG1S = 0.5 V, VG2S = 0.425 V) IG2S 4 µA Vth 275 (min) 425 (max) mV Gate 1–to–Source Cutoff Voltage (VDS = 2 V, VG2S = 1 V, ID = 200 µA) VG1S(off) 100 (min) 360 (max) mV Gate 2–to–Source Cutoff Voltage (VDS = 2 V, VG1S = 0.5 V, ID = 200 µA) VG2S(off) 10 (min) 370 (max) mV gm 9 (min) mS IDS(off) 2 (max) µA THERMAL CHARACTERISTICS Rating Thermal Resistance, Channel to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Threshold Voltage (VDS = 3 V, VG2S = 1 V, ID = 1 mA) Forward Transconductance (VDS = 2 V, VG2S = 1 V, ID = 1 mA) Drain–to–Source Leakage Current (VDS = 2 V, VG1S = 0 V, VG2S = 0 V) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF9820T1 1 PERFORMANCE CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Value Unit RF Power Gain (VDS = 3 V, VG2 = 1.7 V, ID = 1 mA, f = 940 MHz) Gps 14 (min) dB Noise Figure (VDS = 3 V, VG2 = 1.7 V, ID = 1 mA, f = 940 MHz) NF 1.5 (typ) 2.0 (max) dB Input Third Order Intercept Point IIP3 –3 (typ) –8 (min) dBm DRAIN GATE 1 SOURCE GATE 2 Figure 1. Electrical Schematic of GaAs AGC Amplifier MRF9820T1 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 10 VG2S = 1.0 V TA = 25°C 8 IDS , DRAIN CURRENT (mA) IDS , DRAIN CURRENT (mA) 10 VG1S = 0.6 V 6 0.5 V 4 0.4 V 2 VDS = 2.0 V TA = 25°C 8 VG2S = 1.0 V 0.8 V 6 0.6 V 4 2 0.4 V 0.3 V 0.2 V 0 0 2 1 0 5 0.2 0.4 0.8 0.6 VDS, DRAIN–SOURCE VOLTAGE (V) VG1S, GATE 1–SOURCE VOLTAGE (V) Figure 2. Drain Current versus VDS; Stepping VG1S Figure 3. Drain Current versus VG1S; Stepping VG2S VG1S = 0.5 V TA = 25°C 4 IDS , DRAIN CURRENT (mA) VG2S = 1.0 V 0.8 V 3 0.6 V 2 0.4 V 1 VDS = 2.0 V TA = 25°C 8 6 VG1S = 0.6 V 0.2 V 4 0.5 V 0.4 V 2 0.2 V 0 1.0 10 5 IDS , DRAIN CURRENT (mA) 0.2 V 0 4 3 0 1 2 3 0.3 V 4 5 0 0 0.2 0.4 0.8 0.6 VDS, DRAIN–SOURCE VOLTAGE (V) VG2S, GATE 2–SOURCE VOLTAGE (V) Figure 4. Drain Current versus VDS; Stepping VG2S Figure 5. Drain Current versus VG2S; Stepping VG1S MOTOROLA RF DEVICE DATA 1.0 MRF9820T1 3 PACKAGE DIMENSIONS A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. G 3 4 S B 1 2 F D H J C R K DIM A B C D F G H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 1.20 1.39 0.047 0.055 0.84 1.14 0.033 0.045 0.39 0.50 0.015 0.020 0.79 0.93 0.031 0.037 1.78 2.03 0.070 0.080 0.013 0.10 0.0005 0.004 0.08 0.15 0.003 0.006 0.46 0.60 0.018 0.024 0.445 0.60 0.0175 0.024 0.72 0.83 0.028 0.033 2.11 2.48 0.083 0.098 STYLE 11: PIN 1. SOURCE 2. GATE 1 3. GATE 2 4. DRAIN CASE 318A–05 ISSUE R Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF9820T1 4 ◊ MRF9820T1/D MOTOROLA RF DEVICE DATA