星合电子 SD103AM3 / SD103BM3 / SD103CM3 Schottky Barrier Diode / DATA SHEET ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ◇ ◇ ◇ ◇ ◇ ◇ Low Forward Voltage Schottky Rectifier SOD323F Thin SMD package (Fig-1) RoHS compliant / Green EMC Matte Tin (Sn) Lead finish Moisture Level Sensitivity 1 Cathode Band / Device marking Device Marking Code SD103AM3 CA SD103BM3 CB SD103CM3 CC 0.65mm Typ Fig.-1 Package SOD323F Absolute Maximum Ratings （Ta = 25 ℃） Symbol VRRM VR IO *1 Parameter Value Units SD103AM3 SD103BM3 SD103CM3 Repetitive Peak Reverse Voltage 40 30 20 V Reverse Voltage 28 21 14 V Continuous Forward Current 350 mA 1.5 A Power Dissipation 200 mW TJ Junction Temperature 125 ℃ TSTG Storage Temperature -55 to +125 ℃ IFSM Non-Repetitive Peak Forward Current PD *1 8.3 ms single half sine-wave Electrical Characteristics （Ta = 25 ℃） Symbol BVR IR Parameter Conditions Breakdown Voltage SD103AM3 SD103BM3 SD103CM3 IR = 10μA IR = 10μA IR = 10μA Reverse Current SD103AM3 SD103BM3 SD103CM3 VR = 30V VR = 20V VR = 10V VF Forward Voltage IF = 20mA IF = 200mA C Capacitance VR = 0V, f = 1MHz Min Typ Max 40 30 20 Units V 50 5 μA 0.37 0.60 V V pF 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 星合电子 SD103AM3 / SD103BM3 / SD103CM3 Schottky Barrier Diode / DATA SHEET ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Ordering Information Device Package Shipping SD103AM3 SD103BM3 SD103CM3 SOD323F Tape & Reel 3000pcs /7” Reel Tape wide Emboss pitch Tape specification 8 mm 4 mm Conductive Notes Package Dimensions ( U nit : m m ) ( U nit : m m ) 0.8 0.8 1.25 ± 0.10 0.30 + 0.10 - 0.05 3.0 to 3.2 2.50 ± 0.20 Lan d P attern R ecom m en dation 0.11 + 0.10 - 0.05 0.65 + 0.10 - 0.05 1.70 ± 0.10 S O D 323F * N otes: D im ensions of P O P P U LA (JED EC /JEIT A : S O D -323/S C -90) * (0.4) P ackage O utline 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７