HMC952 v00.0312 Amplifiers - Linear & Power - Chip GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Typical Applications Features The HMC952 is ideal for: Saturated Output Power: +35 dBm @ 28% PAE • Point-to-Point Radios High Output IP3: +42 dBm • Point-to-Multi-Point Radios High Gain: 36 dB • SATCOM DC Supply: +6V @ 1400 mA • Military & Space No External Matching Required Die Size: 3.46 x 1.73 x 0.1 mm Functional Diagram General Description The HMC952 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier with Power Detector which operates between 9 and 14 GHz. The HMC952 provides 36 dB of gain, +35 dBm of saturated output power, and 28% PAE from a +6V power supply. The HMC952 exhibits excellent linearity and is optimized for high capacity Point-to-Point and Point-to-MultiPoint Radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4, Vdd5= +6V, Idd = 1400 mA [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 9 - 10 34 Units GHz 36 dB 0.04 dB/ °C Input Return Loss 12 16 dB Output Return Loss 8 12 dB Output Power for 1 dB Compression (P1dB) 34.5 dBm Saturated Output Power (Psat) 35 35 dBm Output Third Order Intercept (IP3)[2] 41 42.5 dBm 1400 1400 mA Total Supply Current (Idd) 31 34 33 Max. 0.04 Gain Variation Over Temperature 37 Typ. 10 - 14 31.5 [1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical. [2] Measurement taken at Pout / Tone = +20 dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz 45 30 40 20 35 S21 S11 S22 10 0 +25C +85C -55C 25 -10 20 -20 -30 15 8 9 10 11 12 13 FREQUENCY (GHz) 14 15 16 9 10 12 13 14 Output Return Loss vs. Temperature 0 0 -5 +25C +85C -55C -5 RETURN LOSS (dB) -10 -15 -20 -25 -10 -15 +25C +85C -55C -20 -25 -30 -35 -30 9 10 11 12 13 14 9 10 FREQUENCY (GHz) 12 13 14 13 14 P1dB vs. Supply Voltage [1] 38 36 36 34 34 P1dB (dBm) 38 +25C +85C -55C 32 11 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 11 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 30 Amplifiers - Linear & Power - Chip Gain vs. Temperature 40 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss vs. Frequency 32 30 30 28 28 26 5V 6V 7V 26 9 10 11 12 13 14 FREQUENCY (GHz) 9 10 11 12 FREQUENCY (GHz) [1] 7V plot taken at Idd= 1200 mA, 5V and 6V plots taken Idd= 1400mA. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz 38 38 36 36 34 34 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage [1] +25C +85C -55C 32 32 30 30 28 28 26 5V 6V 7V 26 9 10 11 12 13 14 9 10 FREQUENCY (GHz) 36 36 34 34 Psat(dBm) 38 32 1000 mA 1100 mA 1200 mA 1300 mA 1400 mA 13 14 13 14 1000 mA 1100 mA 1200mA 1300mA 1400mA 32 30 28 28 26 26 9 10 11 12 13 14 9 10 FREQUENCY (GHz) 12 Output IP3 vs. Supply Current, Pout/Tone = +20 dBm 46 44 44 42 42 40 40 IP3 (dBm) 46 38 +25C +85C -55C 36 11 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +20 dBm IP3 (dBm) 12 Psat vs. Supply Current (Idd) 38 30 11 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) P1dB (dBm) Amplifiers - Linear & Power - Chip Psat vs. Temperature 38 34 34 32 32 30 1000 mA 1100 mA 1200 mA 1300 mA 1400 mA 36 30 9 10 11 12 13 14 FREQUENCY (GHz) 9 10 11 12 13 14 FREQUENCY (GHz) [1] 7V plot taken at Idd= 1200 mA, 5V and 6V plots taken Idd= 1400mA. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz 80 44 70 42 60 40 50 38 36 5V 6V 7V 34 40 9.5 GHz 10.5 GHz 11.5 GHz 12.5 GHz 13.5 GHz 30 20 32 10 30 0 9 10 11 12 13 14 10 12 14 FREQUENCY (GHz) 70 70 60 60 50 50 IM3 (dBc) IM3 (dBc) 80 9.5 GHz 10.5 GHz 11.5 GHz 12.5 GHz 13.5 GHz 30 20 18 20 22 24 20 22 24 Output IM3 @ Vdd = +7V [2] 80 40 16 Pout/TONE (dBm) Output IM3 @ Vdd = +6V 40 9.5 GHz 10.5 GHz 11.5 GHz 12.5 GHz 13.5 GHz 30 20 10 10 0 0 10 12 14 16 18 20 22 24 10 12 14 Pout/TONE (dBm) 18 Power Compression @ 9.5 GHz 10 6 4 2 40 3200 35 2800 30 2400 25 2000 20 1600 1200 15 Idd 10 800 Pout Gain PAE 5 400 0 0 0 9 10 11 12 13 14 FREQUENCY (GHz) -20 Idd (mA) Pout (dBm), Gain (dB), PAE (%) +25C +85C -55C 8 16 Pout/TONE (dBm) Noise Figure vs Temperature NOISE FIGURE (dB) Amplifiers - Linear & Power - Chip Output IM3 @ Vdd = +5V 46 IM3 (dBc) IP3 (dBm) Output IP3 vs. Supply Voltage, Pout/Tone = +20 dBm [1] -15 -10 -5 0 5 INPUT POWER (dBm) [1] 7V plot taken at Idd= 1200 mA, 5V and 6V plots taken Idd= 1400mA. [2] 7V plot taken at Idd= 1200 mA. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Power Compression @ 13.5 GHz 40 3200 2800 35 2800 30 2400 30 2400 25 2000 25 2000 20 1600 20 1600 1200 15 Idd 10 800 Pout Gain PAE 5 400 Pout (dBm), Gain (dB), PAE (%) Pout (dBm), Gain (dB), PAE (%) 3200 35 0 0 -20 -15 -10 -5 0 Idd 10 5 -15 -10 -5 0 -10 +25C +85C -55C -20 ISOLATION (dB) 1 Vref-Vdet (V) 5 Reverse Isolation vs. Temperature 10 0.1 10 GHz +25C 10 GHz +85C 10 GHz -40C 12 GHz +25C 12 GHz +85C 12 GHz -40C 0.01 -6 -2 2 6 10 14 18 22 26 30 -30 -40 -50 -60 -70 -80 -90 34 11 OUTPUT POWER (dBm) 12 13 14 15 16 17 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 11.5 GHz 40 40 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 0 INPUT POWER (dBm) Detector Voltage vs. Frequency & Temperature 36 32 GAIN P1dB Psat 28 24 20 1000 400 0 -20 INPUT POWER (dBm) 0.001 -10 800 Pout Gain PAE 0 5 Gain & Power vs. Supply Current @ 11.5 GHz 36 32 GAIN P1dB Psat 28 24 20 1050 1100 1150 1200 Idd (mA) 5 1200 15 1250 1300 1350 1400 5 5.2 5.4 5.6 5.8 6 Vdd (V) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 40 Idd (mA) Amplifiers - Linear & Power - Chip Power Compression @ 11.5 GHz HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Power Dissipation 10 8 6 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 14 GHz 4 2 0 -15 -12 -9 -6 -3 0 3 6 INPUT POWER (dBm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -3 ~ 0 Vdc +5.0 1400 RF Input Power (RFIN) +24 dBm +6.0 1400 Channel Temperature 150 °C +7.0 1200 Continuous Pdiss (T= 85 °C) (derate 133 mW/°C above 85 °C) 8.6 W Thermal Resistance (channel to die bottom) 7.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD sensitivity (HBM) Class 0, Passed 150V Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1400 mA at +6V. Vgg adjusted to achieve Idd = 1200 mA at +7V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip POWER DISSIPATION (W) 12 6 HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Amplifiers - Linear & Power - Chip Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Pad Descriptions Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. 2 - 5, 9 Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 Drain bias voltage for amplifier. External bypas capacitors of 100pF, 10nF, and 4.7uF are required. 6 RFOUT This pad is DC coupled and matched to 50 Ohms. 7 Vdet DC voltage representing RF output power rectified by diode which is biased through an external resistor. See application circuit. 8 Vref DC bias of diode biased through external resistor, used for temperature compensation of Vdet. See application circuit 10 - 12 Vgg3, Vgg2, Vgg1 Gate control for amplifier. External bypass capacitors of 100pF and 100nF are required Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip Pad Number 8 HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz Amplifiers - Linear & Power - Chip Application Circuit 9 Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC952 v00.0312 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Amplifiers - Linear & Power - Chip Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10