HMC283 v03.1007 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC283 is ideal for: High Gain: 21 dB • Millimeterwave Point-to-Point Radios Psat Output Power: +21 dBm • VSAT Wideband Performance: 17 - 40 GHz • SATCOM ns g i s De Small Chip Size: 1.72 x 0.88 x 0.1 mm Functional Diagram ew N r foDescription d General e d enThe HMC283 chip is a four stage GaAs MMIC Medium m m o c Power Amplifier (MPA) which covers the frequency e R t range of 17 to 40 GHz. The chip can easily be inteNo grated into Multi-Chip Modules (MCMs) due to its small size. The chip utilizes a GaAs PHEMT process offering 21 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300 mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fixture connected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils). Electrical Specifi cations, TA = +25° C, Vdd= +3.5V*, ldd = 300 mA Parameter Min. Frequency Range Gain Typ. Max. 17 - 40 16 Gain Flatness (Any 1 GHz BW) Input Return Loss Output Return Loss GHz 21 dB ±0.8 dB 9 dB 6 dB Reverse Isolation 40 50 dB Output Power for 1 dB Compression (P1dB) 14 18 dBm Saturated Output Power (Psat) 17 21 dBm Output Third Order Intercept (IP3) 21 26 Noise Figure Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.) dBm 10 14 dB 300 400 mA *Vdd = Vdd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vgg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical. 3-2 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC283 v03.1007 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Broadband Gain & Return Loss 30 30 25 20 26 10 S11 S21 S22 5 0 -5 -10 22 wD e N or f d de n e mm o c Re t o N 18 14 -15 -20 +25C -55C +85C 10 -25 0 10 20 30 10 40 15 20 25 30 35 40 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature Input Return Loss vs. Temperature 0 0 -10 -4 RETURN LOSS (dB) ISOLATION (dB) 3 ns g i s e -20 -30 +85 C -55 C -40 -50 -8 -12 +25C -55C +85C -16 -60 +25 C -20 -70 10 15 20 25 30 35 10 40 15 Noise Figure vs. Temperature 25 30 35 40 Output Return Loss vs. Temperature 0 14 12 -4 RETURN LOSS (dB) NOISE FIGURE (dB) 20 FREQUENCY (GHz) FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - CHIP 15 GAIN (dB) RESPONSE (dB) Gain vs. Temperature 10 8 6 +25 C -55 C +85 C 4 -8 +25 C -55 C +85 C -12 -16 2 -20 0 10 15 20 25 30 FREQUENCY (GHz) 35 40 10 15 20 25 30 35 40 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-3 HMC283 v03.1007 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Power Compression @ 20 GHz Output P1dB vs. Temperature 23 +25 C -55 C +85 C 19 17 15 13 16 20 24 28 20 16 12 ew N r fo d e end m com e R Not 32 36 8 0 -10 40 ns g i s De +25 C -55 C +85 C 4 -8 -6 -4 FREQUENCY (GHz) -2 0 2 4 6 8 10 INPUT POWER (dBm) Power Compression @ 28 GHz Output Psat vs. Temperature 24 Pout (dBm), GAIN (dB), PAE (%) 25 23 Psat (dBm) 21 19 +25C -55C +85C 17 15 16 20 24 28 32 36 20 16 12 8 +25 C -55 C +85 C 4 0 -10 40 -8 -6 -4 FREQUENCY (GHz) 0 2 4 6 8 10 6 8 10 Power Compression @ 39 GHz Output IP3 vs. Temperature 24 Frequency (GHz) Temperature 20 28 38 -55 °C 25.6 25.4 28.6 +25 °C 27.5 25.9 27.1 +85 °C 27 24.4 25.7 All levels in dBm -2 INPUT POWER (dBm) Pout (dBm), GAIN (dB), PAE (%) LINEAR & POWER AMPLIFIERS - CHIP P1dB (dBm) 21 3 Pout (dBm), GAIN (dB), PAE (%) 24 22 20 18 16 14 +25 C -55 C +85 C 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) 3-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC283 v03.1007 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Absolute Maximum Ratings +5Vdc Drain Bias Current (Idd) 400 mA Gate Bias Voltage (Vgg1, Vgg2, Vgg3, Vgg4) -2 to +0.4Vdc Gate Bias Current (Igg) 4 mA RF Input Power (RFIN)(Vdd = +3.5 Vdc) Channel Temperature Continuous Pdiss (T = 85 °C) (derate 13.04 mW/°C above 85 °C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS wD e N or f d de n e mm o c Re t o N +8 dBm ns g i s e 175 °C 1.174 W 76.7 °C/W -65 to +150 °C -55 to +85 °C Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 LINEAR & POWER AMPLIFIERS - CHIP Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-5 HMC283 v03.1007 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Pin Descriptions Pin Number Function Pin Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. Vdd1 Power Supply Voltage for the amplifier. External bypass caps of 100pF and 0.1 μF are required. Vgg2 Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3, Vgg4) to achieve Idd = 300mA. External bypass caps of 100pF and 0.1 μF are required. 2 LINEAR & POWER AMPLIFIERS - CHIP 3 3-6 3, 10 4, 5 6 7 Vdd2, 3. 4 RFOUT VDET ew N r fo d e end m com e R Not Power Supply Voltage for the amplifier. External bypass caps of 100pF and 0.1 μF are required. Interface Schematic ns g i s De This pad is AC coupled and matched to 50 Ohms. Output power verification pad. Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3, Vgg4) to achieve Idd = 300mA. External bypass caps of 100pF and 0.1 μF are required. 8 Vgg4 9 Vgg3 Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3, Vgg4) to achieve Idd = 300mA. External bypass caps of 100pF and 0.1 μF are required. 11 Vgg1 Gate Control for amplifier. Adjust Vgg ( = Vgg1, Vgg2, Vgg3, Vgg4) to achieve Idd = 300mA. External bypass caps of 100pF and 0.1 μF are required. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC283 v03.1007 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) ns g i s e wD e N or f d de n e Microstrip substrates should brought as close to the m in m die as possible order to minimize bond wire length. Typical c die-to-substrate spacing is o 0.076mm to 0.152 mm (3 to 6 mils). Re t o RF bypass capacitors should beN used on the Vdd & Vgg inputs. 100pF 0.102mm (0.004”) Thick GaAs MMIC RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. single layer capacitors (mounted eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The photo in figure 3 shows a typical assembly for the HMC283 MMIC chip. Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Figure 3: Typical HMC283 Assembly Handling Precautions 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-7 HMC283 v03.1007 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). ns g i s De Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). ew N r fo d e end m Mounting com e The chip is back-metallized and can be dieR mounted with AuSn eutectic preforms or with electrically conductive epoxy. t The mounting surface should be clean and flat. o N RF bypass capacitors should be used on the Vdd & Vgg inputs. 100pF single layer capacitors (mounted eutectically or by conductive epoxy) placed no further than 0.762 mm (30 mils) from the chip are recommended. The photo in figure 3 shows a typical assembly for the HMC283 MMIC chip. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. -4 +10 dBm +15 dBm +18 dBm -7 Wire Bonding -10 Ball or wedge bond with 0.025mm (1 mil) diameter pure 10 15 20 25 30 35 40 gold wire (DC Bias) or ribbon bond (RF ports) 0.076mm x OUTPUT FREQUENCY (GHz) 0.013mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). HMC283 Alternate Applications: 2 1.4 1.8 DETECTED VOLTAGE INTO 10K RESISTOR (Volts) 1.6 1.2 1 0.8 0.6 0.4 +85 C 0.2 -55 C 1.6 18 GHz 28 GHz 22 GHz 38 GHz 1.4 1.2 1 0.8 0.6 0.4 0.2 +25 C 0 0 10 3-8 CONVERSION LOSS (dB) Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool 5 temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 2 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. -1 DETECTED VOLTAGE INTO 10K RESISTOR (Volts) LINEAR & POWER AMPLIFIERS - CHIP 3 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 12 14 16 18 20 22 10 12 14 16 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 20 22 HMC283 Notes: GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz D E U N I T N O T C C S U I D D O PR wD e N or f d de n e mm o c Re t o N ns g i s e For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP v03.1007 3-9