HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET (600V,10A) Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching 1 Features 2 3 1 2 • H10N60 is a High voltage NChannel enhancement mode power MOSFET 3-Lead TO-220FP) Plastic Package Package Code: F Pin 1: Gate Pin 2: Drain 3Pin 3: Source H10N60 Series Symbol D chip fabricated in advanced silicon epitaxial planar technology • Advanced termination scheme to provide enhanced voltageblocking capability • Avalanche Energy Specified • Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; • The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers G S Absolute Maximum Ratings Symbol VDSS Parameter Value Units 600 V 10 A 6.4 A Drain-Source Voltage o ID Continuous Drain Current (VGS@10V, TC=25 C) o Continuous Drain Current (VGS@10V, TC=100 C) *1 IDM Pulsed Drain Current 36 A VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25oC) PD Linear Derating Factor EAS IAR EAR TO-220AB 150 TO-220FP 50 TO-220AB 1.25 TO-220FP 0.4 Single Pulse Avalanche Energy*2 *1 Avalanche Current *1 Repetitive Avalanche Energy W W/°C 68 mJ 10 A 66 mJ TJ Operating Junction Temperature Range -55 to 150 °C Tstg Storage Temperature Range -55 to 150 °C Value Units *1: Repetitive rating; pulse width limited by max. junction temperature *2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A *3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case (Max.) RθJA Thermal Resistance Junction to Ambient (Max.) H10N60 Series TO-220AB 1.3 TO-220FP 3.5 62 °C/W °C/W HSMC Product Specification HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 2/5 MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS Characteristic Test Conditions Min. Typ. Max. Unit 600 - - V Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temp. Coefficient Reference to 25oC, ID=1mA - 0.58 - V/oC Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current VDS=400V, VGS=0V, Tj=125°C 60 uA IGSSF Gate-Source Forward Leakage Vgsf=30V, VDS=0V - - 100 nA IGSSR Gate-Source Reverse Leakage Vgsr=-30V, VDS=0V - - -100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V *4 - - 1.0 Ω 5 - S - 2780 - - 325 - ΔV(BR)DSS/ΔT J IDSS RDS(on) Static Drain-Source On-Resistance VGS=10V, ID=5.0A gFS Forward Transconductance VDS=40V, ID=5.0A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 8.8 - td(on) Turn-on Delay Time - 20 - - 26 - - 98 - - 45 - - 62 - 15 - 26 Min. Typ. tr td(off) tf Rise Time Turn-off Delay Time VDS=15V, VGS=0V, f=1MHz (VDD=320V, ID=10A, RG=10Ω, RD=32Ω)*4 Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (VDS=480V, ID=10A, VGS=10V) *4 pF ns nC Source-Drain Diode Symbol IS VSD Characteristic Max. Units Continuous Source Current (Body Diode) Page1 MOSFET symbol showing the integral reverse P-N junction diode. - - 10 A Diode Forward Voltage IS=10A, VGS=0V, TJ=25°C*4 - - 1.4 V *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% *5: COSS eff. Is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS H10N60 Series HSMC Product Specification HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve 10V 6V 12 10V 6V 5V 6 5 10 Ta=150℃ Ta=25℃ 8 ID,Drain current( ID,Drain current( 5V 6 4 4V 4 4V 3 2 1 2 0 0 0 2 4 6 8 10 12 VDS,Drain-to-sourceVoltage(V) 14 0 16 2 4 6 8 10 12 VDS,Drain-to-source Voltage(V) 16 Fig 2.Typical Output Characteristics Fig 1.Typical Output Characteristics 1 1.8 1.6 VGS=10V 0.9 ID=10A VGS=10V 1.4 Rds(on),Drain-Source On-Resistan 14 1.2 Normalized RDS(O 0.8 0.7 0.6 0.5 1 0.8 0.6 0.4 0.2 0 -50 0.4 0 2 4 6 ID Drain,Current(A) 8 10 12 0 50 Tj,Junction Temperature(℃) 100 150 Fig 4.Normalized On-Resistance v.s.Junction Fig 3.Typical On-Resistance & Drain Current 100 4 3.5 IS(A) VGS(th)(V Tj=150℃ 10 Tj=25℃ 1 3 2.5 2 0.1 1.5 1 -50 0.01 0 0.2 0.4 0.6 0.8 VSD,Source-to-Drain Voltage(V) Fig 5.Forward Characteristic of Reverse Diode H10N60 Series 1 1.2 0 50 100 150 Tj,Junction Temperature(℃) Fig 6.Gate Threshold Voltage v.s.junction HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 4/5 TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B E C D H K M I 3 G N 2 O P Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Note: Green label is used for pb-free packing J L Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 E O C D α3 α2 α5 Note: Green label is used for pb-free packing G Pin Style: 1.Gate 2.Drain 3.Source I J N 3 2 F K Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 M DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 L Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 o *5 Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 H10N60 Series HSMC Product Specification HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H10N60 Series o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification