HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET (25V, 50A) 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D Features Internal Schematic Diagram • RDS(on)=6mΩ@VGS=10V, ID=30A • RDS(on)=9mΩ@VGS=4.5V, ID=30A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM G S Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current *1 IDM 350 A 70 W TA=25oC Maximum Power Dissipation PD o TA=75 C Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.1mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted) *2 42 W o TJ,Tstg -55 to 150 EAS 300 RθJC 1.8 O C/W 40 O C/W RθJA C mJ *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board Switching Test Circuit Switching Waveforms VDD ton td(on) VIN D VGEN RG tr td(off) 90% VOUT Output, VOUT G toff 10% tf 90 % 10% Inverted 90% S H50N03J 50% Input, VIN 10% 50% Pulse Width HSMC Product Specification HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 2/5 MICROELECTRONICS CORP. ELectrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit V Static Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 25 - - Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=30A - 7.5 9 Drain-Source On-State Resistance RDS(on) VGS=10V, ID=30A - 4.5 6 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.3 1.9 3 V mΩ Zero Gate Voltage Drain Current IDSS VDS=25V, VGS=0V - - 1 uA Gate Body Leakage IGSS VGS=±20V, VDS=0V - - ±100 nA Gate Resistance Rg VDS=0V, VGS=1V at 1MHz - 3 - Ω Forward Transconductance gfs VDS=15V, ID=15A - 50 - S - 16.8 - - 6.08 - Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 4.93 - Turn-On Delay Time td(on) - 15.3 - Turn-On Rise Time tr VDD=15V, RL=15Ω, ID=1A - 4 - Turn-Off Delay Time td(off) VGEN=10V, RG=6Ω - 45.27 - VDS=15V, ID=20A, VGS=5V nC nS Turn-Off Fall Time tf - 7.6 - Input Capacitance Ciss - 2325.9 - Output Capacitance Coss - 330.55 - Reverse Transfer Capacitance Crss - 173.91 - IS - - 50 A - 0.85 1.3 V VDS=15V, VGS=0V, f=1MHz pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage VSD IS=20A, VGS=0V NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H50N03J HSMC Product Specification HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve Fig.1 Output Characteristric Fig.2 Transfer Characteristric 80 V GS= 4.0V, 4.5V, 5.0V, 6.0V, 10.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 80 60 3.5V 40 20 3.0V 2.5V VDS =10V 60 40 T J = 125oC 20 25oC 0 0 0 1 2 3 4 5 1 V DS - Drain-to-Source Voltage (V) RDS(ON) - On-Resistance (m ) RDS(ON) - On-Resistance (m Ξ ) 15 V GS = 4.5V V GS = 10V 5 2.5 3 3.5 4 4.5 30 ID =30A 25 20 15 10 125oC 5 TJ =25oC 0 0 0 20 40 60 80 2 100 4 Fig.5 On Resistance vs Junction Temperature 10 6000 1.1 C - Capacitance (pF) 1.2 5000 (Normalized) RDS(ON) - On-Resistance VGS =10 V ID =30A 1.3 1 0.9 f=1MHz VGS=0V Ciss 4000 3000 2000 1000 Coss, Crss 0.8 0 0.7 -50 8 Fig.6 Capacitance 1.5 1.4 6 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(on) - On - Resistance (Mormalized 2 Fig.4 On Resistance vs Gate to Source Voltage 20 10 1.5 V GS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current -25 0 25 50 75 100 o TJ - Junction Tem perature ( C) H50N03J - 55oC 125 150 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 4/5 MICROELECTRONICS CORP. TO-252 Dimension A DIM A C F G H L M N a1 a2 a5 Marking: M a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None F J 5 0 N 0 3 C Date Code Control Code Note: Green label is used for pb-free packing G Pin Style: 1.Gate 2.Drain 3.Source 2 1 N 3 H a5 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 a2 L Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J M F Pb Free Mark Pb-Free: " . " (Note) H Normal: None a1 y1 E y1 Pin Style: 1.Gate 2.Drain 3.Source y1 H N L a2 a1 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 O a2 y2 Control Code Note: Green label is used for pb-free packing GI J J 5 0 N 0 3 Date Code K DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Marking: A B C D a1 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H50N03J HSMC Product Specification HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H50N03J o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification