HSMC H3055MJ

HI-SINCERITY
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 1/4
MICROELECTRONICS CORP.
H3055MJ
H3055MJ Pin Assignment
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Tab
N-Channel Enhancement-Mode MOSFET (30V, 12A)
1
Description
2
3
D
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Internal Schematic
Diagram
G
S
Features
• RDS(on)=45mΩ@VGS=4.5V, ID=5.2A; RDS(on)=35mΩ@VGS=10V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
12
A
ID
IDM
PD
Drain Current (Continuous)
Drain Current (Pulsed)
*1
30
A
o
2
W
o
1.3
W
-55 to +150
°C
62.5
°C/W
Total Power Dissipation @TA=25 C
Total Power Dissipation @TA=75 C
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
2
*2: 1-in 2oz Cu PCB board
H3055MJ
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 2/4
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=250uA
30
-
-
V
VGS=4.5V, ID=5.2A
-
34
45
VGS=10V, ID=6A
-
25
35
0.6
-
1.5
V
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Body Leakage Current
VGS=±20V, VDS=0V
-
-
±100
nA
gFS
Forward Transconductance
VDS=10V, ID=6A
7
13
-
S
-
4.2
-
-
1.2
-
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
-
1.7
-
Ciss
Input Capacitance
-
410
-
Coss
Output Capacitance
-
73
-
Crss
Reverse Transfer Capacitance
-
55
-
td(on)
Turn-on Delay Time
-
3
-
tr
Turn-on Rise Time
VDD=15V, ID=1A, VGEN=10V
-
2
-
td(off)
Turn-off Delay Time
RGEN=3Ω, RL=2.2Ω
-
10
-
-
3
-
-
-
4.3
A
-
-
1
V
tf
VDS=10V, ID=6A, VGS=6.9V
VDS=10V, VGS=0V, f=1MHz
Turn-off Fall Time
nC
pF
ns
• Drain-Source Diode Characteristics
IS
VSD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
VGS=0V, IS=1A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Switching
Test Circuit
Switching
Waveforms
ton
VDD
td(on)
tr
toff
td(off)
tf
90%
90%
RD
VIN
D
VOUT
10%
Output, VOUT
10%
Inverted
VGEN
90%
RG
50%
G
50%
S
Input, VIN
H3055MJ
10%
Pulse Width
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 3/4
MICROELECTRONICS CORP.
TO-252 Dimension
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
Marking:
M
A
a1
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
J
3 0 5 5 M
F
Date Code
C
Control Code
Note: Green label is used for pb-free packing
G
2
1
Pin Style: 1.Gate 2.Drain 3.Source
N
3
H
a5
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a1
a2
L
Material:
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
0.65
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Marking:
A
B
C
D
a1
M
F
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
a1
y1
E
J
3 0 5 5 M
Date Code
Control Code
Note: Green label is used for pb-free packing
GI
y1
Pin Style: 1.Gate 2.Drain 3.Source
y1
Material:
H
J
N
K
L
a2
a1
O
a2
y2
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
Min.
6.40
5.04
0.40
0.50
5.90
2.50
9.20
0.60
0.66
2.20
0.70
0.82
0.40
2.10
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5o
3o
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H3055MJ
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
o
o
1. Storage environment: Temperature=10 C~35 C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Sn-Pb Eutectic Assembly
o
Pb-Free Assembly
o
<3 C/sec
<3 C/sec
Preheat
o
150 C
150 C
o
200 C
60~120 sec
60~180 sec
- Temperature Min (Tsmin)
100 C
- Temperature Max (Tsmax)
- Time (min to max) (ts)
o
o
Tsmax to TL
- Ramp-up Rate
o
o
<3 C/sec
<3 C/sec
Time maintained above:
- Temperature (TL)
- Time (tL)
o
o
217 C
183 C
60~150 sec
Peak Temperature (TP)
o
o
60~150 sec
o
o
240 C +0/-5 C
260 C +0/-5 C
10~30 sec
20~40 sec
o
Time within 5 C of actual Peak
Temperature (tP)
o
o
Ramp-down Rate
<6 C/sec
<6 C/sec
o
<6 minutes
<8 minutes
Peak temperature
Dipping time
Pb devices.
245 C ±5 C
10sec ±1sec
Pb-Free devices.
260 C ±5 C
10sec ±1sec
Time 25 C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
H3055MJ
o
o
o
o
HSMC Product Specification