HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET (30V, 12A) 1 Description 2 3 D This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Internal Schematic Diagram G S Features • RDS(on)=45mΩ@VGS=4.5V, ID=5.2A; RDS(on)=35mΩ@VGS=10V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications Applications • Battery Protection • Load Switch • Power Management Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V 12 A ID IDM PD Drain Current (Continuous) Drain Current (Pulsed) *1 30 A o 2 W o 1.3 W -55 to +150 °C 62.5 °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75 C Tj, Tstg RθJA Operating and Storage Temperature Range Thermal Resistance Junction to Ambient *2 *1: Maximum DC current limited by the package 2 *2: 1-in 2oz Cu PCB board H3055MJ HSMC Product Specification HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 2/4 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=250uA 30 - - V VGS=4.5V, ID=5.2A - 34 45 VGS=10V, ID=6A - 25 35 0.6 - 1.5 V • Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance VGS(th) mΩ Gate Threshold Voltage VDS=VGS, ID=250uA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=10V, ID=6A 7 13 - S - 4.2 - - 1.2 - • Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.7 - Ciss Input Capacitance - 410 - Coss Output Capacitance - 73 - Crss Reverse Transfer Capacitance - 55 - td(on) Turn-on Delay Time - 3 - tr Turn-on Rise Time VDD=15V, ID=1A, VGEN=10V - 2 - td(off) Turn-off Delay Time RGEN=3Ω, RL=2.2Ω - 10 - - 3 - - - 4.3 A - - 1 V tf VDS=10V, ID=6A, VGS=6.9V VDS=10V, VGS=0V, f=1MHz Turn-off Fall Time nC pF ns • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Switching Test Circuit Switching Waveforms ton VDD td(on) tr toff td(off) tf 90% 90% RD VIN D VOUT 10% Output, VOUT 10% Inverted VGEN 90% RG 50% G 50% S Input, VIN H3055MJ 10% Pulse Width HSMC Product Specification HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 3/4 MICROELECTRONICS CORP. TO-252 Dimension DIM A C F G H L M N a1 a2 a5 Marking: M A a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 3 0 5 5 M F Date Code C Control Code Note: Green label is used for pb-free packing G 2 1 Pin Style: 1.Gate 2.Drain 3.Source N 3 H a5 • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 a2 L Material: Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Marking: A B C D a1 M F Pb Free Mark Pb-Free: " . " (Note) H Normal: None a1 y1 E J 3 0 5 5 M Date Code Control Code Note: Green label is used for pb-free packing GI y1 Pin Style: 1.Gate 2.Drain 3.Source y1 Material: H J N K L a2 a1 O a2 y2 • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H3055MJ HSMC Product Specification HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products o o 1. Storage environment: Temperature=10 C~35 C Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Sn-Pb Eutectic Assembly o Pb-Free Assembly o <3 C/sec <3 C/sec Preheat o 150 C 150 C o 200 C 60~120 sec 60~180 sec - Temperature Min (Tsmin) 100 C - Temperature Max (Tsmax) - Time (min to max) (ts) o o Tsmax to TL - Ramp-up Rate o o <3 C/sec <3 C/sec Time maintained above: - Temperature (TL) - Time (tL) o o 217 C 183 C 60~150 sec Peak Temperature (TP) o o 60~150 sec o o 240 C +0/-5 C 260 C +0/-5 C 10~30 sec 20~40 sec o Time within 5 C of actual Peak Temperature (tP) o o Ramp-down Rate <6 C/sec <6 C/sec o <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245 C ±5 C 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time 25 C to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products H3055MJ o o o o HSMC Product Specification