HI-SINCERITY Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date :2010,03,04 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1MΩ)............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... ±20 V (1) Continuous Drain Current (TA=25°C) ............................................................................................................. 200 mA (1) Continuous Drain Current (TA=100°C) ........................................................................................................... 115 mA (2) Pulsed Drain Current (TA=25°C) .................................................................................................................... 800 mA Total Power Dissipation (TC=25°C).................................................................................................................. 200 mW Derate above 25°C .................................................................................................................................. 0.16 mW / °C Storage Temperature............................................................................................................................... -55 to 150 °C Operating Junction Temperature ............................................................................................................. -55 to 150 °C Lead Temperature, for 10 second Soldering ...................................................................................................... 260 °C Gate Source ESD Rating……………………………………………………………………………………………….… 2KV Thermal Characteristics Thermal Resistance, Junction-to-Ambient................................................................................................... 625 °C / W Electrical Characteristics (TA=25°C) Parameter Symbol Test Conditions Min Typ. Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0, ID=10uA 60 - - V Gate Threshold Voltage VGS(th) VDS=2.5V, ID=0.25mA 1 - 2.0 V Gate Source Leakage Current, Forward IGSS/F VGS=+20V, VDS=0 - - 10 uA Gate Source leakage Current, Reverse IGSS/R VGS=-20V, VDS=0 - - -10 uA Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0 - - 10 uA On-State Drain Current ID(ON) VDS>2VDS(ON), VGS=10V 500 - - mA ID=50mA, VGS=5V - - 0.375 V ID=500mA, VGS=10V - - 3.75 V Static Drain-Source On-State Voltage VDS(ON) Static Drain-Source On-State Resistance RDS(ON) Ω ID=75mA, VGS=4.5V ID=50mA, VGS=5V ID=500mA, VGS=10V Forward Transconductance GFS VDS>2VDS(ON), ID=200mA Turn-on Delay Time td(on) Turn-off Delay Time td(off) (VDD=50V, RD=250Ω, VGS=10V, RG=50Ω) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V, VGS=0, f=1MHz (1)The Power Dissipation of the package may result in a continuous drain current. (2)Pulse Width≤300us, Duty cycle≥2%. H2N7002K - - 5.0 Ω - - 5.0 Ω 80 - - mS - 20 - nS - 40 - nS - 50 pF - 25 pF - 5 pF HSMC Product Specification HI-SINCERITY Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date :2010,03,04 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve VGS=10V 2.0 VGS=6V ID-Drain Current 1.4 VGS=7V VGS=5V 1.2 1.0 1.6 Tj=25℃ 1.2 Tj=75℃ ID-Drain Current 1.6 VGS=4V 0.8 Tj=125℃ 0.8 0.6 VGS=3V 0.4 0.4 0.2 0.0 0.0 0 1 2 3 4 5 VDS-Drain-to-Source Voltage(V) Output Characteristics 0 6 1 2 3 VGS- Gate-to-Source Voltage(v) Transfer Characteristics 4 1.2 3.0 1.0 VGS(th) Varia n RDS(on)-OnResistance(Normali z VGS=4.5V at 200mA 2.5 ID=250uA 0.8 2.0 0.6 1.5 VGS=10V at 500mA 1.0 0.4 0.2 0.5 0.0 25 0.0 25 50 75 100 125 TJ-Junction Temperature(℃) On-Resistance VS.Junction Temperature 2.50 50 75 100 TJ-Junction Temperature(℃) Threshold Voltage Variance Over Temperature 125 Safe Operating Area RDS(on)-On-Resistance 10 2.00 1.75 ID=500mA 1.50 ID=200mA 1.25 Collector Current-IC (mA) 2.25 PT=1ms 1 PT=100ms PT=10ms 1.00 0 H2N7002K 2 4 6 8 10 VGS-Gate-to-Source Voltage(v) On-Resistance vs.Gate-Source Voltage 0.1 1 10 100 1000 Forward Biased Voltage-VCE (V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date :2010,03,04 Page No. : 3/5 MICROELECTRONICS CORP. Thermal Response 1 r(t) ,Transient Thermal Resistance (normalized) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pluse 0.01 0.1 1 10 100 1000 t ,Time(ms) H2N7002K HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date :2010,03,04 Page No. : 4/5 SOT-23 Dimension Marking: A L 3 B S 1 2 G V DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H K J Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office • Head Office (Hi-Sincerity Microelectronics Corp.): 5/F., Golden Harvest Building 15 Wang Chiu Road, Kowloon Bay, Hong Kong Tel: +852-2755-7162 Fax: +852-2755- 7795 AVANTICS : Shanghai Address: No.399, Cai Lum Rd. Zhangjiang Technology Industrial Park Pudong, Shanghai 201210, China Tel: +86(21) 61637118 Fax: +86(21)61637006 H2N7002K HSMC Product Specification HI-SINCERITY Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date :2010,03,04 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H2N7002K o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification