HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 1 2 3 H03N60 Series Symbol: Features D G S • Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol Parameter Value Units ID Drain to Current (Continuous) 3 A IDM Drain to Current (Pulsed) 12 A VGS Gate-to-Source Voltage (Continue) ±30 V H03N60E (TO-220AB) 55 W H03N60F (TO-220FP) 28 o Total Power Dissipation (TC=25 C) PD Tj, Tstg Derate above 25°C H03N60E (TO-220AB) 0.4 H03N60F (TO-220FP) 0.33 Operating and Storage Temperature Range W/°C -55 to 150 °C EAS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) 35 mJ TL Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 260 °C H03N60E, H03N60F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 2/5 MICROELECTRONICS CORP. Thermal Characteristics Symbol Parameter Value RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Units TO-220AB 2 TO-220FP 3.3 °C/W °C/W 62.5 ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit 600 - - V Drain-Source Leakage Current (VDS=600V, VGS=0V) - - 1 uA Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C) - - 50 uA IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=1.5A)* - - 4 Ω gFS Forward Transconductance (VDS≥50V, ID=1.5A)* 1 - - mhos Ciss Input Capacitance - 465 - Coss Output Capacitance - 66 - Crss Reverse Transfer Capacitance - 13 - td(on) Turn-on Delay Time - 12 - - 21 - - 30 - Fall Time - 24 - Qg Total Gate Charge - 18 30 Qgs Gate-Source Charge - 5 - Qgd Gate-Drain Charge - 12 - LD Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) - 4.5 - nH LS Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) - 7.5 - nH Min. Typ. Max. Units - - 1.6 V - ** - ns - 340 - ns V(BR)DSS IDSS tr td(off) tf Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Rise Time Turn-off Delay Time VGS=0V, VDS=25V, f=1MHz (VDD=300V, ID=3A, RG=18Ω, VGS=10V)* (VDS=300V, ID=3A, VGS=10V)* pF ns nC *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Characteristic VSD Forward On Voltage(1) ton Forward Turn-On Time trr Reverse Recovery Time o IS=3A, VGS=0V, TJ=25 C IS=3A, VGS=0V, dIS/dt=100A/us **: Negligible, Dominated by circuit inductance H03N60E, H03N60F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic Capacitance Characteristics 1000 10 VGS=10V 8 800 VGS=8V 7 6 Capacitance (pF) ID, Drain-Source Current (A) 9 VGS=6V 5 VGS=5V 4 600 400 Ciss 3 2 200 1 Crss VGS=4V 0 Coss 0 0 2 4 6 8 10 0.1 1 VDS, Drain-Source Voltage (V) 10 100 VDS, Deain-Source Voltage (V) Typical On-Resistance & Drain Current Drain Current Variation with Gate Voltage and Temperature 6.0 o VDS=10 V 5.0 ID, Drain-Source Current (A) RDS(ON), Drain-Source On-Resistance... 6 5.5 VGS=10V 4.5 4.0 3.5 3.0 TC= 25 C 5 4 3 2 1 2.5 2.0 0 0 1 2 3 4 5 6 0.0 1.0 2.0 ID, Drain Current (A) 3.0 4.0 5.0 6.0 7.0 8.0 V GS, Gate-Source Voltage (V) Gate Charge Waveforms Maximum Safe Operating Area 12 10 10 ID, Drain Current (A) VDS=200V V GS (V) 8 6 4 1ms 10ms 1 100ms 2 0 0.1 0 1 2 3 Q, Gate Charge (nC) H03N60E, H03N60F 4 5 10 100 1000 V DS, Drain-Source Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 4/5 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D E 0 3N6 0 Date Code H K M I 3 G N 2 O P J L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Control Code Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H E O C D α3 α2 α5 Date Code G I J N 2 K 1 M L Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F F 0 3N6 0 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H03N60E, H03N60F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec 100oC 150oC Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) o 150 C 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products H03N60E, H03N60F o o HSMC Product Specification