ISAHAYA 2SC5482_12

〈transistor〉
2SC5482
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
DESCRIPTION
2SC5482 is a silicon NPN epitaxial designed for
relay drive or power supply application.
OUTLINE DRAWING
UNIT:mm
3.0
7.5MAX
4.0
14.0
1.0
13.0MIN
1.0
0.1
0.45
2.5
2.5
0.4
2.5
①
③
②
TERMINAL CONNECTOR
①:EMITTER
EIAJ: ②:COLLECTOR
JEDEC: ③:BASE
MAXIMUM RATINGS(Ta=25℃)
Parameter
Symbol
VCBO
Collector to Base voltage
Ratings
Unit
60
V
VEBO
Emitter to Base voltage
6
V
VCEO
Collector to Emitter voltage
60
V
ICM
Peak collector current
2
A
IC
Collector current
1
A
PC
Collector dissipation
600
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
482
□□C
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V(BR)CBO
C to B break down voltage
IC= 10μA , I E= 0mA
60
-
-
V
V(BR)EBO
E to B break down voltage
I E=10μA , IC= 0mA
6
-
-
V
V(BR)CEO
C to E break down voltage
IC=2mA , RBE= ∞
60
-
-
V
ICBO
Collector cut off current
V
CB
-
-
0.2
μA
IEBO
Emitter cut off current
V
EB= 4V , I C= 0mA
-
-
0.2
μA
CE
hFE
VCE(sat)
fT
Cob
= 50V , I E= 0mA
DC forward current gain ※
V
55
-
300
-
C to E Saturation voltage
IC =500mA , I B= 25mA
=4V , IC= 100mA
-
0.11
0.3
V
Gain bandwidth product
V
CE
= 2V , I E= -10mA
-
120
-
MHz
Collector output capacitance
V
CB
= 10V , I E= 0mA,f=1MHz
-
14
-
pF
※
Item
C
hFE
55~110
D
90~180
E
150~300
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5482
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5482
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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Apr.2012