ISAHAYA 2SC5397_12

〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro(Frame type)
DESCRIPTION
2SC5397 is a silicon NPN epitaxial type transistor.
OUTLINE DRAWING
UNIT:mm
TERMINAL CONNECTOR
①:EMITTER
EIAJ: ②:COLLECTOR
JEDEC: ③:BASE
MAXIMUM RATINGS(Ta=25℃)
Ratings
Unit
VCBO
Collector to Base voltage
Parameter
30
V
VEBO
Emitter to Base voltage
4
V
VCEO
Symbol
Collector to Emitter voltage
25
V
IC
Collector current
30
mA
PC
Collector dissipation
450
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
397
□□B
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
ICBO
Collector cut off current
V
CB
IEBO
Emitter cut off current
V
EB= 4V , I C= 0mA
hFE
fT
Cob
Ccrb'b
NF
Typ
Max
-
-
1
μA
-
-
1
μA
= 30V , I E= 0mA
DC forward current gain ※
V
CE
Gain bandwidth product
V
CE= 6V , I E= -1mA
= 6V , IC= 1mA
Collector output capacitance
V
CB
Collector- base time constant
V
CB
Noise figure
V
CE= 6V , I E= -0.1mA,f=1kHz,RG=2kΩ
Unit
Min
35
-
300
-
150
200
-
MHz
= 6V , I E= 0mA,f=1MHz
-
2.0
2.7
pF
=6V, I E=-1mA, f=31.8MHz
-
20
60
pS
3.0
-
dB
※:It shows hFE classification at right table.
Item
B
C
D
E
hFE
35~70
55~110
90~180
150~300
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Feb.2012