ISA2166AU1 PRELIMINARY ※This datasheet is possibility of change. Because this device is developing now. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit：mm 1.5 ISA2166AU1 is a silicon PNP epitaxial type transistor Designed with high collector current, low VCE(sat). 0.32 0.35 ① ② 0.12 ③ 0～0.1 0.7 ●High collector current IC（MAX）=-500mA ●Low collector to emitter saturation voltage VCE（sat）<-0.4Vmax(IC=-150mA, IB=-15mA） 0.8 0.55 0.5 FEATURE 0.5 0.22 1.7 1.0 0.35 APPLICATION For switching application, small type motor drive application. TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR JEITA：SC-75A JEDEC： － MAXIMUM RATINGS（Ta=25℃） Symbol VCEO VCBO VEBO IC PC Tj Tstg Parameter Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -60 -5 -500 150 150 -55～150 Unit V V V mA mW ℃ ℃ MARKING Type Name A ・W ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE VCE（sat） VBE（sat） fT Cob Parameter Test condition C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage B to E saturation voltage Gain band width product Collector output capacitance IC=-1mA, IB=0 IC=-10uA, IE=0 IE=-10uA, IC=0 VCB=-50V, IE=0 VEB=-3V, IC=0 IC=-150mA, VCE=-10V IC=-150mA, IB=-15mA IC=-150mA, IB=-15mA IE=50mA, VCE=-20V,f=100MHz VCB=-10V, f=1MHz ISAHAYA ELECTRONICS CORPORATION Min -60 -60 -5 － － 100 － － 200 － Limits Typ － － － － － － － － － － Max － － － -0.1 -0.1 300 -0.4 -1.3 － 8 Unit V V V uA uA － V V MHz pF ISA2166AU1 PRELIMINARY ※This datasheet is possibility of change. Because this device is developing now. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE -100 COLLECTOR CURRENT IC(mA) IB=-500uA COLLECTOR DISSIPATION Pc(mW) Ta=25℃ COMMON EMITTER OUTPUT 200 150 100 50 IB=-400uA -80 IB=-300uA -60 IB=-200uA -40 IB=-100uA -20 IB=0uA -0 0 0 50 100 -0 150 -2 AMBIENT TEMPERATURE Ta(℃) -8 -10 500 10000 VCE=-10V 1000 GAIN BAND WIDTH PRODUCT fT(MHz) DC FORWARD CURRENT GAIN hFE(-) -6 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 85℃ 25℃ 100 -40℃ 10 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) Ta=25℃ VCE=-20V 400 300 200 100 0 -1000 1 VCE=-10V -400 85℃ 25℃ -200 -40℃ -100 -0 -0 -0.2 -0.4 -0.6 -0.8 -1 BASE TO EMITTER VOLTAGE VBE(V) -1.2 COLLECTOR OUTPUT CAPACITANCE Cob(pF) -500 -300 10 100 EMITTER CURRENT IE(mA) 1000 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE COMMON EMITTER TRANSFER COLLECTOR CURRENT IC(mA) -4 COLLECTOR TO EMITTER VOLTAGE VCE(V) 100 Ta=25℃ IE=0 f=1MHz 10 1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION -100 ISA2166AU1 PRELIMINARY ※This datasheet is possibility of change. Because this device is developing now. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) -1000 IC/IB=10 -100 85℃ -40℃ -10 25℃ -1 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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