〈SMALL-SIGNAL TRANSISTOR〉 TENTATIVE INA5001AC1 This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type) Some parameters are subject to change. DESCRIPTION OUTLINE DRAWING Unit：ｍｍ INA5001AC1 is a super mini package resin sealed silicon PNP epitaxial transistor, 2.5 It is designed for relay draive or Power supply application. 1.5 0.95 ●Super mini package for easy mounting ① 0.95 2.9 1.90 FEATURE ② 0.5 0.4 0.5 . ③ ● Low VCE(sat) VCE(sat)=-0.5 V max(@IC=-500mA/IB=-50mA) ● High collector current 0.8 0.16 VCEO=-50V 1.1 ● High voltage IC=-1A 0～0.1 APPLICATION Relay drive, Power supply for audio equipment, VTR , etc MAXIMUM RATINGS（Ta=25℃） Symbol Parameter Ratings Unit VCBO Collector to Base voltage -50 V VEBO Emitter to Base voltage -5 V VCEO Collector to Emitter voltage -50 V IC Collector current -1 A ICM Peak collector current -2 A PC Collector dissipation 200 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ JEITA：SC-59 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol Test conditions Limits Min Typ Max Unit C to B break down voltage V(BR)CBO I C=-10μA , I E=0 -50 - - V E to B break down voltage V(BR)EBO I E=-10μA , I C=0 -5 - - V C to E break down voltage V(BR)CEO I C=-1mA ,R -50 - - V BE =∞ Collector cut off current ICBO V CB Emitter cut off current IEBO V EB=-5V, I C=0mA hFE V CE DC forward current gain C to E Saturation Voltage Gain bandwidth product Collector output capacitance =-50V, I E=0mA - - -0.1 uA - - -0.1 uA =-4V, I C=-0.1A 160 - 380 I C=-500mA ,IB=-50mA - - -0.5 V fT V CE =-2V, I E=500mA - 120 - MHz Cob V CB =-10V, I E=0mA,f=1MHz - 12 - pF VCE(sat) ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 TENTATIVE INA5001AC1 This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type) Some parameters are subject to change. COMMON EMITTER OUTPUT Collector dissipation-AMBIENT TEMPERATURE -0.6 400 Collector current IC (A) Collector dissipation Pc (mW) 500 300 200 100 0 -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA PcMAX=0.2W Ta=25℃ -2.5mA -0.4 -2.0mA -1.5mA -1mA -0.2 IB=-0.5mA -0 0 40 80 120 160 200 -0 AMBIENT TEMPERATURE Ta (℃) -1 -2 DC forward current gain VS. Collector current COMMON EMITTER TRANSFER -100 1000 VCE=-4V DC forward current gain hFE Collector current IC(mA) VCE=-4V -10 Ta=85℃ 25℃ -40℃ -1 Ta=85℃ 25℃ -0 -0.2 -0.4 -0.6 -0.8 -1 -40℃ 100 10 -0.1 -0.1 -1.2 COLLECTOR TO EMITTER SATURATION VOLTAGE VS. BASE CURRENT -1.6 -0.3A -0.4A -0.5A -0.6A -0.2A IC=-0.1A -1.2 -0.6 -0.4 -0.2 -0 -0.1 -100 -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1 -10 BASE CURRENT IB (mA) -100 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) （ｍV) -1.4 -0.8 -10 -1000 Ta=25℃ -1 -1 Collector current IC(mA) BASE TO EMITTER VOLTAGE VBE (V) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE (V) -3 COLLECTOR TO EMITTER VOLTAGE VCE (V) IC/IB=10 -100 Ta=85℃ 25℃ -10 -0.1 -40℃ -1 -10 -100 COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION -1000 〈SMALL-SIGNAL TRANSISTOR〉 TENTATIVE INA5001AC1 This is not a final specification. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type) Some parameters are subject to change. GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 Ta=25℃ VCE=-2V COLLECTOR OUTPUT CAPACITANCE Cob (pF) GAIN BAND WIDTH PRODUCT ｆT (MHｚ) 1000 100 10 1 0.1 1 10 100 1000 EMITTER CURRENT IE (ｍA) Ta=25℃ single pulse Ta=25℃ IE=0 ｆ=1MHz 10 1 -0.1 -1 ASO -10 ICmax=-1A PW=1msec 10msec -0.1 DC (200mW) 100msec 1sec -0.01 VCEmax=-50V Collector current IC (A) ICMmax=-2A(less than 100msec） -1 -10 COLLECTOR TO BASE VOLTAGE VCB (V) -0.001 -0.01 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Feb.2009