<SMALL-SIGNAL TRANSISTOR> INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：ｍｍ INA6006AP1 is a silicon PNP transistor. 4.6 MAX 1.6 It is designed with high voltage. 1.5 FEATURE C E 0.8 MIN ・Low voltage VCE(sat) = -0.5V(MAX) ・Complementary ： INC6006AP1 B 0.53 MAX 0.4 0.48 MAX 1.5 APPLICATION 2.5 ・High voltage VCEO = -150V 4.2 MAX ・Small package for easy mounting. 3.0 High voltage switching. マーキング MARKING TERMINAL CONNECTOR 電極接続 Ｅ: E：EMITTER エミッタ Ｃ: C：COLLECTOR コレクタ Ｂ: ベース B：BASE JEITA:SC-62 EIAJ : SC-62 JEDEC:SOT-89 JEDEC : JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING UNIT -160 V -5 V VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage -150 V CM Peak collector current -200 mA C Collector current -100 mA PC Collector dissipation(Ta=25℃) 500 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ I I MARKING Type Name B E W LOT № hFE ITEM ELECTRICAL CHARACTERISTICS（Ta=25℃） LIMITS TYP SYMBOL PARAMETER TEST CONDITIONS V(BR)CBO C to B break down voltage I C=-100μA，I E=0mA -160 - - V V(BR)EBO E to B break down voltage I E=-10μA，I C=0mA -5 - - V V(BR)CEO C to E break down voltage I C=-1mA，RBE=∞ -150 - - V ICBO Collector cut off current VCB=-120V，I E =0mA - - -100 nA IEBO Emitter cut off current VEB=-3V，I C=0mA - - -100 nA ｈＦＥ1 DC forward current gain1 VCE=-5V，I C=-1mA 45 - - - ｈＦＥ2 DC forward current gain2 VCE=-5V，I C=-10mA 90 - 270 - ｈＦＥ3 DC forward current gain3 VCE=-5V，I C=-50mA 45 - - - VCE(sat)1 C to E saturation voltage1 I C=-10mA，I B=-1mA - - -0.2 V VCE(sat)2 C to E saturation voltage2 I C=-50mA，I B=-5mA - - -0.5 V VBE(sat)1 B to E saturation voltage1 I C=-10mA，I B=-1mA - - -1.0 V VBE(sat)2 B to E saturation voltage2 I C=-50mA，I B=-5mA - - -1.0 V VBE(on) B to E on voltage VCE=-5V，I C=-10mA - - -0.77 V fT Gain bandwidth product VCE=-10V，I E=10mA 100 - 300 MHz Cob Collector output capacitance VCB=-10V，I E=0mA，f=1MHz - 2.8 6 pF ISAHAYA ELECTRONICS CORPORATION MIN MAX UNIT <SMALL-SIGNAL TRANSISTOR> INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICIAL CHARACTERISTICS Collector dissipation-AMBIENT TEMPERATURE DC forward current gain VS. Collector current 1000 -1000 800 DC forward current gain hFE Collector dissipation Pc (mW) 85℃ 600 400 200 0 0 25 50 75 100 125 -100 -40℃ -10 -0.01 150 -0.1 AMBIENT TEMPERATURE Ta (℃) 85℃ -1 25℃ -40℃ -0.1 -0.01 -0.4 -0.6 -0.8 -1 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （ｍV) Collector current IC(mA) VCE=-5V -0.2 IC/IB=10 85℃ 25℃ -0.1 -40℃ -0.01 -0.01 -1 -10 -100 COMMON EMITTER OUTPUT BASE TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT -70 COLLECTOR CURRENT IC (mA) COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （ｍV) -0.1 COLLECTOR CURRENT IC(mA) IC/IB=10 -40℃ -1 -100 -1 BASE TO EMITTER VOLTAGE VBE (V) -10 -10 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT -100 -0 -1 Collector current IC(mA) COMMON EMITTER TRANSFER -10 VCE=-5V 25℃ 25℃ 85℃ Ta=25℃ -60 IB=300uA -50 IB=250uA -40 IB=200uA -30 IB=150uA -20 IB=100uA IB=50uA -10 IB=0 -0.1 -0.01 -0 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) -100 -0 -5 -10 -15 COLLECTOR EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION -20 <SMALL-SIGNAL TRANSISTOR> INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE COLLECTOR OUTPUT CAPACITANCE Cob (pF) Ta=25℃ VCE=-10V 100 10 1 0.1 1 10 100 100 Ta=25℃ f=1MHz 10 1 -0.1 COLLECTOR CURRENT IC(A) COLLECTOR INPUT CAPACITANCE Cib (pF) Ta=25℃ f=1MHz 10 EMITTER TO BASE VOLTAGE VEB (V) -100 ASO -1 100 -1 -10 Ta=25℃ single pulse COLLECTOR INPUT CAPACITANCE VS. BASE TO EMITTER VOLTAGE 1 -0.1 -1 COLLECTOR TO BASE VOLTAGE VCB (V) EMITTER CURRENT IE (ｍA) -10 100msec ICMmax=-0.2A 10msec ICmax=-0.1A 1msec -0.1 1sec DC(0.5W) -0.01 -0.001 -0.01 -0.1 -1 VCEOmax=-150V GAIN BAND WIDTH PRODUCT ｆT (MHｚ) 1000 -10 -100 -1000 COLLECTOR TO EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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