2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION 2SA2167 is a silicon PNP epitaxial type transistor. It is designed with high voltage, high Collector current, high Collector dissipation. Unit：mm 4.6MAX 0.53 MAX 1.5 0.48MAX 0.4 3.0 MARKING マーキング APPLICATION TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR Audiovisual apparatus, VTR, Relay drive MAXIMUM RATINGS（Ta=25℃） Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature B 0.8MIN ●High voltage VCEO=-60V ●High Collector current IC=-2A ●Low Collector to Emitter saturation voltage VCE（sat）＝0.5VMax （@IC=-1A/IB=-50mA） ●High Collector dissipation PC=500mW Symbol VCBO VEBO VCEO IC ICM PC Tj Tstg C E FEATURE 4.2MAX 1.5 2.5 1.6 Ratings -60 -6 -60 -2 -3 500 150 -55∼150 Unit V V V A A mW ℃ ℃ JEITA：SC-62 JEDEC：SOT-89 MARKING TYPE NAME A L D hFE ITEM Lot No. ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Parameter Test condition V（BR）CBO V（BR）EBO V（BR）CEO ICBO IEBO hFE VCE（sat） fT Cob Collector to Base brake down voltage Emitter to Base brake down voltage Collector to Emitter brake down voltage Collector cut off current Emitter cut off current DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance IC=-10uA、IE=0mA IE=-10uA、IC=0mA IC=-2mA、RBE=∞ VCB=-50V、IE=0mA VEB=-4V、IC=0mA VCE=-4V、IC=-100mA IC=-1A、IB=-50mA VCE=-2V、IE=10mA VCB=10V、IE=0mA、f=1MHz MARKING hFE C 55∼110 ISAHAYA ELECTRONICS CORPORATION Min -60 -6 -60 Limits Typ 55 -0.2 65 23 D 90∼180 Max -0.2 -0.2 300 -0.5 E 150∼300 Unit V V V μA μA − V MHz pF 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV] DC FORWARD CURRENT GAIN hFE Ta=25℃ VCE=-6V 100 10 Ta=25℃ IC/IB=20/1 -100 -10 1 -1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000 -1 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 100 COLLECTOR OUTPUT CAPACITANCE Cob[pF] Ta=25℃ VCE=-2V 100 10 1 Ta=25℃ IE=0A f=1MHz 10 1 1 10 EMITTER CURRENT IE[mA] 100 -1 -10 COLLECTOR TO BASE VOLTAGE VCB[V] COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 700 600 COLLECTOR DISSIPATION Pc[mW] -10000 COLLECTOR OUTPUT CAPATITANCE VS. COLLECTOR TO BASE VOLTAGE 1000 GAIN BAND WIDTH PRODUCT fT[MHz] -10 -100 -1000 COLLECTOR CURRENT IC[mA] 500 400 300 200 100 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta[℃] 150 ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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