4 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface IS25LD040 FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V - 3.6 V • Memory Organization - IS25LD040: 512K x 8 (4 Mbit) • Cost Effective Sector/Block Architecture - 4Mb : Uniform 4KByte sectors / Eight uniform 64KByte blocks • Low standby current 1uA (Typ) • Serial Peripheral Interface (SPI) Compatible - Supports single- or dual-output - Supports SPI Modes 0 and 3 - Maximum 33 MHz clock rate for normal read - Maximum 100 MHz clock rate for fast read • Page Program (up to 256 Bytes) Operation - Typical 2 ms per page program • Sector, Block or Chip Erase Operation - Maximum 10ms sector, block or chip erase • Low Power Consumption - Typical 10 mA active read current - Typical 15 mA program/erase current • Hardware Write Protection - Protect and unprotect the device from write operation by Write Protect (WP#) Pin • Software Write Protection - The Block Protect (BP2, BP1, BP0) bits allow partial or entire memory to be configured as readonly • High Product Endurance - Guaranteed 200,000 program/erase cycles per single sector - Minimum 20 years data retention • Industrial Standard Pin-out and Package - 8-pin 150mil SOIC - 8-pin 208mil SOIC - 8-pin 300mil PDIP - 8-contact WSON - 8-pin 150mil VVSOP - Lead-free (Pb-free), package GENERAL DESCRIPTION The IS25LD040 are 4Mbit Serial Peripheral Interface (SPI) Flash memories, providing single- or dual-output. The devices are designed to support a 33 MHz clock rate in normal read mode, and 100 MHz in fast read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers. The IS25LD040 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (SlO), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. They comply with all recognized command codes and operations. The dual-output fast read operation provides and effective serial data rate of 200MHz. The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program operation. These devices are divided into uniform 4 KByte sectors or uniform 64 KByte blocks. The IS25LD040 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are offered in 8-pin SOIC 150mil, 8-contact WSON, 8-pin VVSOP 150mil, 8-pin 208mil SOIC and 8-pin 300mil PDIP. The devices operate at wide temperatures between -40°C to +105°C. Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 1 IS25LD040 CONNECTION DIAGRAMS CE# 1 8 SO 2 7 WP# GND Vcc HOLD# 3 6 SCK 4 5 SIO 8-Pin SOIC/VVSOP CE# 1 8 Vcc SO 2 7 HOLD# WP# 3 6 SCK GND 4 5 SIO 8-Contact WSON PIN DESCRIPTIONS SYMBOL TYPE DESCRIPTION CE# INPUT SCK SIO SO GND Vcc WP# INPUT INPUT/OUTPUT OUTPUT HOLD# INPUT Chip Enable: CE# low activates the devices internal circuitries for device operation. CE# high deselects the devices and switches into standby mode to reduce the power consumption. When a device is not selected, data will not be accepted via the serial input pin (Sl), and the serial output pin (SO) will remain in a high impedance state. Serial Data Clock Serial Data Input/Output Serial Data Output Ground Device Power Supply Write Protect: A hardware program/erase protection for all or part of a memory array. When the WP# pin is low, memory array write-protection depends on the setting of BP2, BP1 and BP0 bits in the Status Register. When the WP# is high, the devices are not write-protected. Hold: Pause serial communication by the master device without resetting the serial sequence. INPUT Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 2 IS25LD040 BLOCK DIAGRAM Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 3 IS25LD040 SPI MODES DESCRIPTION Multiple IS25LD040 devices can be connected on the SPI serial bus and controlled by a SPI Master, i.e. microcontroller, as shown in Figure 1. The devices support either of two SPI modes: Mode 0 (0, 0) Mode 3 (1, 1) The difference between these two modes is the clock polarity when the SPI master is in Stand-by mode: the serial clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer to Figure 2. For both modes, the input data is latched on the rising edge of Serial Clock (SCK), and the output data is available from the falling edge of SCK. Figure 1. Connection Diagram among SPI Master and SPI Slaves (Memory Devices) SDIO SPI Interface with (0,0) or (1,1) SDI SCK SCK SPI Master (i.e. Microcontroller) CS3 CS2 SO SIO SCK SPI Memory Device CS1 CE# WP# SIO SCK WP# CE# HOLD# SO SIO SPI Memory Device SPI Memory Device CE# HOLD# SO WP# HOLD# Note: 1. The Write Protect (WP#) and Hold (HOLD#) signals should be driven high or low as Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 4 IS25LD040 Figure 2. SPI Modes Supported SCK Mode 0 (0, 0) SCK Mode 3 (1, 1) SIO MSb Input mode SO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 MSb 5 IS25LD040 SYSTEM CONFIGURATION The IS25LD040 devices are designed to interface directly with the synchronous Serial Peripheral Interface (SPI) of the Motorola MC68HCxx series of microcontrollers or any SPI interface-equipped system controllers. The devices have two superset features that can be enabled through specific software instructions and the Configuration Register: Memory Density Block No. Block Size (KBytes) Block 0 64 Block 1 64 : Block 3 Block 4 : : Block 7 : 64 64 : : 64 4 Mbit Sector No. Sector 0 Sector 1 : Sector 15 Sector 16 Sector 17 : Sector 31 : : : : : : Sector Size (KBytes) 4 4 : 4 4 4 : 4 : 4 4 : : 4 Address Range 000000h - 000FFFh 001000h - 001FFFh : 00F000h - 00FFFFh 010000h - 010FFFh 011000h - 011FFFh : 01F000h - 01FFFFh : 030000h – 03FFFFh 040000h – 04FFFFh : : 070000h – 07FFFFh Table 1. Block/Sector Addresses of IS25LD040 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 6 IS25LD040 REGISTERS (CONTINUED) STATUS REGISTER Refer to Tables 5 and 6 for Status Register Format and are allowed. The WEL bit is set by a Write Enable (WREN) instruction. Each write register, program and Status Register Bit Definitions. erase instruction must be preceded by a WREN The BP0, BP1, BP2, and SRWD are volatile memory instruction. The WEL bit can be reset by a Write cells that can be written by a Write Status Register Disable (WRDI) instruction. It will automatically be the (WRSR) instruction. The default value of the BP2, BP1, reset after the completion of a write instruction. BP0 were set to “0” and SRWD bits was set to “0” at factory. Once a “0” or “1”is written, it will not be BP2, BP1, BP0 bits: The Block Protection (BP2, BP1, changed by device power-up or power-down, and can BP0) bits are used to define the portion of the memory only be altered by the next WRSR instruction. The area to be protected. Refer to Tables 7, 8 and 9 for the Status Register can be read by the Read Status Block Write Protection bit settings. When a defined Register (RDSR). Refer to Table 10 for Instruction Set. combination of BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any program The function of Status Register bits are described as or erase operation to that area will be inhibited. Note: follows: a Chip Erase (CHIP_ER) instruction is executed successfully only if all the Block Protection Bits are set WIP bit: The Write In Progress (WIP) bit is read-only, as “0”s. and can be used to detect the progress or completion of a program or erase operation. When the WIP bit is SRWD bit: The Status Register Write Disable (SRWD) “0”, the device is ready for a write status register, bit operates in conjunction with the Write Protection program or erase operation. When the WIP bit is “1”, (WP#) signal to provide a Hardware Protection Mode. the device is busy. When the SRWD is set to “0”, the Status Register is not write-protected. When the SRWD is set to “1” and WEL bit: The Write Enable Latch (WEL) bit indicates the WP# is pulled low (VIL), the volatile bits of Status the status of the internal write enable latch. When the Register (SRWD, BP2, BP1, BP0) become read-only, WEL is “0”, the write enable latch is disabled, and all and a WRSR instruction will be ignored. If the SRWD is write operations, including write status register, page set to “1” and WP# is pulled high (VIH), the Status program, sector erase, block and chip erase operations Register can be changed by a WRSR instruction. are inhibited. When the WEL bit is “1”, write operations Table 5. Status Register Format Default (flash bit) Bit 7 SRWD1 0 Bit 6 Bit 5 Reserved 0 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 Bit 4 BP2 0 Bit 3 BP1 0 Bit 2 BP0 0 Bit 1 WEL 0 Bit 0 WIP 0 7 IS25LD040 REGISTERS (CONTINUED) Table 6. Status Register Bit Definition Bit Name Bit 0 WIP Bit 1 WEL Bit 2 Bit 3 Bit 4 Bits 5 - 6 BP0 BP1 BP2 N/A Bit 7 SRWD Definition Write In Progress Bit: "0" indicates the device is ready "1" indicates a write cycle is in progress and the device is busy Write Enable Latch: "0" indicates the device is not write enabled "1" indicates the device is write enabled (default) Block Protection Bit: (See Table 7 and Table 8 for details) "0" indicates the specific blocks are not write-protected (default) "1" indicates the specific blocks are write-protected Reserved: Always "0"s Status Register Write Disable: (See Table 9 for details) "0" indicates the Status Register is not write-protected (default) "1" indicates the Status Register is write-protected Read/Write Non-Volatile bit R No R/W No R/W Yes N/A R/W Yes Table 8. Block Write Protect Bits for IS25LD040 Status Register Bits BP2 BP1 BP0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 Protected Memory Area 4 Mbit None Upper eight (block : 7): 070000h - 07FFFFh Upper quarter (two blocks :6 and 7): 060000h - 07FFFFh Upper half (four blocks :4 to 7): 040000h - 07FFFFh All Blocks (Block 0 to 7): 000000h - 07FFFFh 8 IS25LD040 REGISTERS (CONTINUED) PROTECTION MODE The IS25LD040 have two types of write-protection Table 9. Hardware Write Protection on Status mechanisms: hardware and software. These are used Register to prevent irrelevant operation in a possibly noisy environment and protect the data integrity. SRWD WP# Status Register 0 Low Writable HARDWARE WRITE-PROTECTION 1 Low Protected The devices provide two hardware write-protection 0 High Writable features: 1 High Writable a. When inputting a program, erase or write status register instruction, the number of clock pulse is checked to determine whether it is a multiple of eight before the executing. Any incomplete instruction command sequence will be ignored. b. The Write Protection (WP#) pin provides a hardware write protection method for BP2, BP1, BP0 and SRWD in the Status Register. Refer to the STATUS REGISTER description. c. Write inhibit is 1.8V, all write sequence will be ignored when Vcc drop to 1.8V and lower SOFTWARE WRITE PROTECTION The IS25LD040 also provides two software write protection features: a. Before the execution of any program, erase or write status register instruction, the Write Enable Latch (WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled first, the program, erase or write register instruction will be ignored. b. The Block Protection (BP2, BP1, BP0) bits allow part or the whole memory area to be write-protected. Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 9 IS25LD040 DEVICE OPERATION The IS25LD040 utilize an 8-bit instruction register. Refer to Table 10 Instruction Set for details of the Instructions and Instruction Codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on Serial Data Input (SIO). The input data on SIO is latched on the rising edge of Serial Clock (SCK) after Chip Enable (CE#) is driven low (VIL). Every instruction sequence starts with a one- byte instruction code and is followed by address bytes, data bytes, or both address bytes and data bytes, depending on the type of instruction. CE# must be driven high (VIH) after the last bit of the instruction sequence has been shifted in. The timing for each instruction is illustrated in the following operational descriptions. Table 10. Instruction Set Instruction Name Hex Code RDID JEDEC ID READ ABh 9Fh RDMDID WREN WRDI RDSR WRSR READ FAST_READ FRDO PAGE_ PROG 90h 06h 04h 05h 01h 03h 0Bh 3Bh 02h SECTOR_ER D7h/ 20h D8h C7h/ 60h BLOCK_ER CHIP_ER Operation Command Cycle Maximum Frequency Read Manufacturer and Product ID Read Manufacturer and Product ID by JEDEC ID Command Read Manufacturer and Device ID Write Enable Write Disable Read Status Register Write Status Register Read Data Bytes from Memory at Normal Read Mode Read Data Bytes from Memory at Fast Read Mode Fast Read Dual Output Page Program Data Bytes Into Memory 4 Bytes 1 Byte 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 33 MHz 100 MHz 100 MHz 100 MHz Sector Erase 4 Bytes 1 Byte 1 Byte 1 Byte 2 Bytes 4 Bytes 5 Bytes 5 Bytes 4 Bytes + 256B 4 Bytes Block Erase Chip Erase 4 Bytes 1 Byte 100 MHz 100 MHz 100 MHz HOLD OPERATION HOLD# is used in conjunction with CE# to select the IS25LD040. When the devices are selected and a serial sequence is underway, HOLD# can be used to pause the serial communication with the master device without resetting the serial sequence. Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 To pause, HOLD# is brought low while the SCK signal is low. To resume serial communication, HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs to Sl will be ignored while SO is in the high impedance state. 10 IS25LD040 DEVICE OPERATION (CONTINUED) RDID COMMAND (READ PRODUCT IDENTIFICATION) OPERATION manufacturer ID is shifted out, the manufacturer ID and device ID will be looping until the pulled high of CE# The Read Product Identification (RDID) instruction is signal. for reading out the old style of 8-bit Electronic Signature, whose values are shown as table of ID Definitions. This is not same as RDID or JEDEC ID Table 11. Product Identification instruction. It’s not recommended to use for new design. For new design, please use RDID or JEDEC ID instruction. Product Identification Data The RDID instruction code is followed by three dummy First Byte 9Dh bytes, each bit being latched-in on SIO during the Manufacturer ID Second Byte 7Fh rising edge of SCK. Then the first manufacturer ID Device ID: (9Dh) is shifted out on SO with the MSB first, followed by the device ID and the second manufacturer ID IS25LD040 7E (7Fh), each bit been shifted out during the falling edge of SCK. If the CE# stays low after the last bit of second Figure 3. Read Product Identification Sequence CE# 0 1 7 8 9 31 46 47 38 39 54 SCK INSTRUCTION SI SO 3 Dummy By tes 1010 1011b HIGH IMPEDANCE Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 Manuf acture ID1 Dev ice ID Manuf acture ID2 11 IS25LD040 DEVICE OPERATION (CONTINUED) JEDEC ID READ COMMAND (READ PRODUCT IDENTIFICATION BY JEDEC ID) OPERATION The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to Table 11 Product Identification for pFlash Manufacturer ID and Device ID. After the JEDEC ID READ command is input, the second Manufacturer ID (7Fh) is shifted out on SO with the MSB first, followed by the first Manufacturer ID (9Dh) and the Device ID, each bit shifted out during the falling edge of SCK. If CE# stays low after the last bit of the Device ID is shifted out, the Manufacturer ID and Device ID will loop until CE# is pulled high. Figure 4. Read Product Identification by JEDEC ID READ Sequence CE# 0 15 16 7 8 23 24 31 SCK INSTRUCTION SI SO 1001 1111b HIGH IMPEDANCE Manufacture ID2 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 Manufacture ID1 Device ID 12 IS25LD040 DEVICE OPERATION (CONTINUED) RDMDID COMMAND (READ DEVICE MANUFACTURER AND DEVICE ID) OPERATION The RDMDID instruction allows the user to read the manufacturer and product ID of devices. Refer to Table 11 Product Identification for pFlash Manufacturer ID and Device ID. The RDMDID command is input, followed by a 24-bit address pointing to an ID table. The table contains the first Manufacturer ID (9Dh) and the Device ID, and is shifted out on SO with the MSB first, each bit shifted out during the falling edge of SCK. If CE# stays low after the last bit of the Device ID is shifted out, the Manufacturer ID and Device ID will loop until CE# is pulled high. Figure 5. Read Product Identification by RDMDID READ Sequence Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 13 IS25LD040 Note : (1) ADDRESS A0 = 0, will output the 1st manufacture ID (9Dh) first -> device ID1 -> 2nd manufacture ID (7Fh) ADDRESS A0 = 1, will output the device ID1 -> 1st manufacture ID (9D) -> 2nd manufacture ID (7Fh) Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 14 IS25LD040 DEVICE OPERATION (CONTINUED) WRITE ENABLE OPERATION The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit of the IS25LD040 is reset to the write –protected state after power-up. The WEL bit must be write enabled before any write operation, including sector, block erase, chip erase, page program and write status register operations. The WEL bit will be reset to the writeprotect state automatically upon completion of a write operation. The WREN instruction is required before any above operation is executed. Figure 6. Write Enable Sequence SIO WRDI COMMAND (WRITE DISABLE) OPERATION The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction is not required after the execution of a write instruction, since the WEL bit is automatically reset. Figure 7. Write Disable Sequence SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 15 IS25LD040 DEVICE OPERATION (CONTINUED) RDSR COMMAND (READ STATUS REGISTER) OPERATION The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a program, erase or write status register operation, all other instructions will be ignored except the RDSR instruction, which can be used to check the progress or completion of an operation by reading the WIP bit of Status Register. Figure 8. Read Status Register Sequence SIO WRSR COMMAND (WRITE STATUS REGISTER) OPERATION The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and status register write protection features by writing “0”s or “1” s into the volatile BP2, BP1, BP0 and SRWD bits. Figure 9. Write Status Register Sequence SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 16 IS25LD040 DEVICE OPERATION (CONTINUED) READ COMMAND (READ DATA) OPERATION The Read Data (READ) instruction is used to read memory data of a IS25LD040 under normal mode running up to 33 MHz. The READ instruction code is transmitted via the Sl line, followed by three address bytes (A23 - A0) of the first memory location to be read. A total of 24 address bits are shifted in, but only AMS (most significant address) - A0 are decoded. The remaining bits (A23 – AMS) are ignored. The first byte addressed can be at any memory location. Upon completion, any data on the Sl will be ignored. Refer to Table 12 for the related Address Key. The first byte data (D7 - D0) addressed is then shifted out on the SO line, MSb first. A single byte of data, or up to the whole memory array, can be read out in one READ instruction. The address is automatically incremented after each byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after the data comes out. When the highest address of the devices is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read in one continuous READ instruction. Table 12. Address Key Address AN (AMS – A0) Don't Care Bits IS25LD040 A18 - A0 A23 – A19 Figure 12. Read Data Sequence SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 17 IS25LD040 DEVICE OPERATION (CONTINUED) FAST_READ COMMAND (FAST READ DATA) OPERATION The FAST_READ instruction is used to read memory data at up to a 100 MHz clock. The first byte addressed can be at any memory location. The address is automatically incremented The FAST_READ instruction code is followed by three after each byte of data is shifted out. When the highest address bytes (A23 - A0) and a dummy byte (8 clocks), address is reached, the address counter will roll over to transmitted via the SIO line, with each bit latched-in the 000000h address, allowing the entire memory to be during the rising edge of SCK. Then the first data byte read with a single FAST_READ instruction. The addressed is shifted out on the SO line, with each bit FAST_READ instruction is terminated by driving CE# shifted out at a maximum frequency fCT, during the high (VIH). falling edge of SCK. Figure 13. Fast Read Data Sequence SIO SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 18 IS25LD040 DEVICE OPERATION (CONTINUED) FRDO COMMAND (FAST READ DUAL OUTPUT) OPERATION The FRDO instruction is used to read memory data on two output pins each at up to a 100 MHz clock. is output on SO, while simultaneously the second bit is output on SIO. The FRDO instruction code is followed by three address bytes (A23 - A0) and a dummy byte (8 clocks), transmitted via the SIO line, with each bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the SO and SIO lines, with each pair of bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSb) The first byte addressed can be at any memory location. The address is automatically incremented after each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single FRDO instruction. FRDO instruction is terminated by driving CE# high (VIH). Figure 14. Fast Read Dual-Output Sequence CE# 0 1 2 3 4 5 6 7 8 9 10 11 SCK 28 30 31 2 1 0 29 ... 3 - BYTE ADDRESS SIO INSTRUCTION = 0011 1011b 23 22 21 ... 3 HIGH IMPEDANCE SO CE# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 6 4 2 0 6 4 2 0 6 1 7 SCK SIO DATA OUT 1 SO HIGH IMPEDANCE Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 7 5 3 DATA OUT 2 1 7 5 3 19 IS25LD040 DEVICE OPERATION (CONTINUED) PAGE_PROG COMMAND (PAGE PROGRAM) OPERATION The Page Program (PAGE_PROG) instruction allows up to 256 bytes data to be programmed into memory in a single operation. The destination of the memory to be programmed must be outside the protected memory area set by the Block Protection (BP2, BP1, BP0) bits. A PAGE_PROG instruction which attempts to program into a page that is write-protected will be ignored. Before the execution of PAGE_PROG instruction, the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction. The PAGE_PROG instruction code, three address bytes and program data (1 to 256 bytes) are input via the Sl line. Program operation will start immediately after the CE# is brought high, otherwise the PAGE_PROG instruction will not be executed. The internal control logic automatically handles the programming voltages and timing. During a program operation, all instructions will be ignored except the RDSR instruction. The progress or completion of the program operation can be determined by reading the WIP bit in Status Register via a RDSR instruction. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed. If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A byte cannot be reprogrammed without first erasing the whole sector or block. Figure 15. Page Program Sequence SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 20 IS25LD040 DEVICE OPERATION (CONTINUED) ERASE OPERATION The memory array of the IS25LD040 is organized into uniform 4 KByte sectors or 64 KByte uniform blocks (a block consists of sixteen adjacent sectors). Before a byte can be reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”). In order to erase the devices, there are three erase instructions available: Sector Erase (SECTOR_ER), Block Erase (BLOCK_ER) and Chip Erase (CHIP_ER). A sector erase operation allows any individual sector to be erased without affecting the data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole memory array of a device. A sector erase, block erase or chip erase operation can be executed prior to any programming operation. SECTOR_ER COMMAND (SECTOR ERASE) OPERATION operation can be determined by reading the WIP bit in the Status Register using a RDSR instruction. If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been completed. BLOCK_ER COMMAND (BLOCK ERASE) OPERATION A Block Erase (BLOCK_ER) instruction erases a 64 KByte block of the IS25LD040. Before the execution of a BLOCK_ER instruction, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the completion of a block erase operation. The BLOCK_ER instruction code and three address bytes are input via SIO. Erase operation will start immediately after the CE# is pulled high, otherwise the BLOCK_ER instruction will not be executed. The internal control logic automatically handles the erase voltage and timing. Refer to Figure 15 for Block Erase Sequence. A SECTOR_ER instruction erases a 4 KByte sector Before the execution of a SECTOR_ER instruction, the Write Enable Latch (WEL) must be set via a Write CHIP_ER COMMAND (CHIP ERASE) OPERATION Enable (WREN) instruction. The WEL bit is reset automatically after the completion of sector an erase A Chip Erase (CHIP_ER) instruction erases the entire operation. memory array of a IS25LD040. Before the execution of CHIP_ER instruction, the Write Enable Latch (WEL) A SECTOR_ER instruction is entered, after CE# is must be set via a Write Enable (WREN) instruction. pulled low to select the device and stays low during the The WEL is reset automatically after completion of a entire instruction sequence The SECTOR_ER chip erase operation. instruction code, and three address bytes are input via SIO. Erase operation will start immediately after CE# is The CHIP_ER instruction code is input via the SIO. pulled high. The internal control logic automatically Erase operation will start immediately after CE# is handles the erase voltage and timing. Refer to Figure pulled high, otherwise the CHIP_ER instruction will not 14 for Sector Erase Sequence. be executed. The internal control logic automatically handles the erase voltage and timing. Refer to Figure During an erase operation, all instruction will be 16 for Chip Erase Sequence. ignored except the Read Status Register (RDSR) instruction. The progress or completion of the erase Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 21 IS25LD040 DEVICE OPERATION (CONTINUED) Figure 16. Sector Erase Sequence SIO Figure 17. Block Erase Sequence SIO Figure 18. Chip Erase Sequence SIO Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 22 IS25LD040 ABSOLUTE MAXIMUM RATINGS (1) Temperature Under Bias Storage Temperature Standard Package Lead-free Package Input Voltage with Respect to Ground on All Pins (2) All Output Voltage with Respect to Ground VCC (2) Surface Mount Lead Soldering Temperature -65oC to +125oC -65oC to +125oC 240oC 3 Seconds 260oC 3 Seconds -0.5 V to VCC + 0.5 V -0.5 V to VCC + 0.5 V -0.5 V to +6.0 V Notes: 1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. The functional operation of the device conditions that exceed those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condition for extended periods may affect device reliability. 2. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot VCC by + 2.0 V for a period of time not to exceed 20 ns. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may undershoot GND by -2.0 V for a period of time not to exceed 20 ns. DC AND AC OPERATING RANGE Part Number Operating Temperature (Extended Grade) Operating Temperature (Industrial Grade) Operating Temperature (Automotive, A1 Grade) Operating Temperature (Automotive, A2 Grade) Operating Temperature (Automotive, A3 Grade) Vcc Power Supply IS25LD040 -40oC to 105oC -40oC to 85oC -40oC to 85oC -40oC to 105oC -40oC to 125oC 2.3 V – 3.6 V DC CHARACTERISTICS Applicable over recommended operating range from: VCC = 2.3 V to 3.6 V (unless otherwise noted). Typ Max Units ICC1 Symbol Vcc Active Read Current Parameter VCC = 3.6V at 33 MHz, SO = Open 10 15 mA ICC2 Vcc Program/Erase Current VCC = 3.6V at 33 MHz, SO = Open 15 30 mA ISB1 Vcc Standby Current CMOS VCC = 3.6V, CE# = VCC 10 A ISB2 Vcc Standby Current TTL VCC = 3.6V, CE# = VIH to VCC 3 mA ILI Input Leakage Current VIN = 0V to VCC 1 A 1 A -0.5 0.8 V 0.7VCC VCC + 0.3 V 0.45 V ILO Output Leakage Current VIL Input Low Voltage VIH Input HIgh Voltage VOL Output Low Voltage VOH Output High Voltage Condition Min o o VIN = 0V to VCC, TAC = 0 C to 85 C 2.3V < VCC < 3.6V Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 IOL = 2.1 mA IOH = -100 A VCC - 0.2 V 23 IS25LD040 AC CHARACTERISTICS Applicable over recommended operating range from VCC = 2.3 V to 3.6 V CL = 1 TTL Gate and 10 pF (unless otherwise noted). Symbol fCT fC tRI tFI tCKH tCKL tCEH tCS tCH tDS tDH tHS tHD tV tOH tLZ tHZ tDIS tEC tPP tVCS tw Parameter Clock Frequency for fast read mode Clock Frequency for read mode Input Rise Time Input Fall Time SCK High Time SCK Low Time CE# High Time CE# Setup Time CE# Hold Time Data In Setup Time Data in Hold Time Hold Setup Time Hold Time Output Valid Output Hold Time Normal Mode Hold to Output Low Z Hold to Output High Z Output Disable Time Secter/Block/Chip Erase Time Page Program Time VCC Set-up Time Write Status Register time (flash bit) Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 Min 0 0 Typ Max 100 33 8 8 200 200 100 10 5 Units MHz MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 10 s ms 4 4 25 10 5 2 2 15 15 8 0 2 50 24 IS25LD040 AC CHARACTERISTICS (CONTINUED) SERIAL INPUT/OUTPUT TIMING (1) SIO Note: 1. For SPI Mode 0 (0,0) Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 25 IS25LD040 AC CHARACTERISTICS (CONTINUED) HOLD TIMING PIN CAPACITANCE (f = 1 MHz, T = 25°C ) CIN COUT Typ 4 8 Max 6 12 Units pF pF Conditions VIN = 0 V VOUT = 0 V Note: These parameters are characterized but not 100% tested. OUTPUT TEST LOAD Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL 26 IS25LD040 POWER-UP AND POWER-DOWN At Power-up and Power-down, the device must not be selected (CE# must follow the voltage applied on Vcc) until Vcc reaches the correct value: - Vcc(min) at Power-up, and then for a further delay of tVCE - Vss at Power-down Usually a simple pull-up resistor on CE# can be used to insure safe and proper Power-up and Power-down. To avoid data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit is included. The logic inside the device is held reset while Vcc is less than the POR threshold value (Vwi) during power up, the device does not respond to any instruction until a time delay of tPUW has elapsed after the moment that Vcc rised above the VWI threshold. However, the correct operation of the device is not guaranteed if, by this time, Vcc is still below Vcc(min). No Write Status Register, Program or Erase instructions should be sent until the later of: - tPUW after Vcc passed the VWI threshold - tVCE after Vcc passed the Vcc(min) level At Power-up, the device is in the following state: - The device is in the Standby mode - The Write Enable Latch (WEL) bit is reset At Power-down, when Vcc drops from the operating voltage, to below the Vwi, all write operations are disabled and the device does not respond to any write instruction. Vcc Vcc(max) All Write Commands are Rejected Chip Selection Not Allowed Vcc(min) Reset State tVCE V (write inhibit) Read Access Allowed Device fully accessible tPUW Time Symbol Parameter Min. Max. Unit tVCE *1 Vcc(min) to CE# Low tPUW *1 Power-Up time delay to Write instruction 1 10 ms Write Inhibit Voltage 1.6 1.8 2.1 V *1 VWI 10 us Note : *1. These parameters are characterized only. Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 27 IS25LD040 PROGRAM/ERASE PERFORMANCE Parameter Sector Erase Time Block Erase Time Chip Erase Time Page Programming Time Unit ms ms ms ms Typ 2 Max 10 10 10 5 Remarks From writing erase command to erase completion From writing erase command to erase completion From writing erase command to erase completion From writing program command to program completion Note: These parameters are characterized and are not 100% tested. RELIABILITY CHARACTERISTICS Parameter Endurance Data Retention ESD - Human Body Model ESD - Machine Model Latch-Up Min 200,000 20 2,000 200 100 + ICC1 Typ Unit Cycles Years Volts Volts mA Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard A114 JEDEC Standard A115 JEDEC Standard 78 Note: These parameters are characterized and are not 100% tested. Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 28 IS25LD040 PACKAGE TYPE INFORMATION ` JN 8-Pin JEDEC 150mil Broad Small Outline Integrated Circuit (SOIC) Package (measure in millimeters) Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 29 IS25LD040 PACKAGE TYPE INFORMATION (CONTINUED) JP 8-Contact Ulta-Thin Small Outline No-Lead (WSON) Package (measure in millimeters) Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 30 IS25LD040 PACKAGE TYPE INFORMATION (CONTINUED) JB Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 31 IS25LD040 PACKAGE TYPE INFORMATION (CONTINUED) JA Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 32 IS25LD040 PACKAGE TYPE INFORMATION (CONTINUED) JV 8-pin VVSOP Package 150mil Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 33 IS25LD040 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 34 IS25LD040 PRODUCT ORDERING INFORMATION IS25LD*** - JN L E Temperature Range E = Extended Grade (-40°C to +105°C) I = Industrial Grade (-40°C to +85°C) A1 = Automotive, A1 Grade (-40°C to +85°C) A2 = Automotive, A2 Grade (-40°C to +105°C) A3 = Automotive, A3 Grade (-40°C to +125°C) Environmental Attribute L = Lead-free (Pb-free) package Package Type JN = 8-pin SOIC 150mil JB = 8-pin SOIC 208mil JA = 8-pin PDIP 300mil JP = 8-contact WSON JV= 8-PIN VVSOP 150mil Device Number IS25LD040 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 35 IS25LD040 ORDERING INFORMATION: Density 4M Frequency (MHz) 100 Order Part Number Package IS25LD040-JNLE IS25LD040-JBLE IS25LD040-JALE IS25LD040-JPLE IS25LD040-JVLE IS25LD040-JNLI IS25LD040-JBLI IS25LD040-JALI IS25LD040-JPLI IS25LD040-JVLI IS25LD040-JNLA1 IS25LD040-JBLA1 IS25LD040-JALA1 IS25LD040-JPLA1 IS25LD040-JVLA1 IS25LD040-JNLA2 IS25LD040-JBLA2 IS25LD040-JALA2 IS25LD040-JPLA2 IS25LD040-JVLA2 8-pin SOIC 150mil 8-pin SOIC 208-mil 8-pin PDIP 300mil 8-pin WSON 8-pin VVSOP 150-mil 8-pin SOIC 150mil 8-pin SOIC 208-mil 8-pin PDIP 300mil 8-pin WSON 8-pin VVSOP 150-mil 8-pin SOIC 150mil 8-pin SOIC 208-mil 8-pin PDIP 300mil 8-pin WSON 8-pin VVSOP 150-mil 8-pin SOIC 150mil 8-pin SOIC 208-mil 8-pin PDIP 300mil 8-pin WSON 8-pin VVSOP 150-mil Integrated Silicon Solution, Inc.- www.issi.com Rev. A 09/12/2012 36