Preliminary Technical Information VCES IC110 VCE(sat) tfi(typ) IXGH40N120C3D1 GenX3TM C3-Class IGBT w/Diode High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 75 40 25 180 A A A A IA EAS TC = 25°C TC = 25°C 30 500 A mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 3Ω Clamped inductive load ICM = 80 @VCE <1200 A V PC TC = 25°C 380 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13 / 10 Nm/lb.in. 300 260 °C °C 6 g TJ TJM Tstg Md Mounting Torque TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight G VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE= 0V 3.0 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.7 TAB E C = Collector TAB = Collector Features z z z z z Optimized for Low Conduction Losses Square RBSOA Avalanche Rated Anti-Parallel Ultra Fast Diode International Standard Package Advantages z Characteristic Values Min. Typ. Max. C G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) 1200V 40A 4.4V 57ns TO-247 1200 1200 = 25°C (Limited by Leads) = 110°C = 110°C = 25°C, 1ms = = ≤ = High Power Density Low Gate Drive Requirement Applications 5.0 V 100 3 μA mA ±100 nA 4.4 V V • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • DC Choppers • AC Motor Drives • DC Servo and Robot Drives DS100115(02/09) IXGH40N120C3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. 30 S 2930 240 93 pF pF pF 142 nC 19 nC 62 nC 17 33 1.80 130 57 ns ns mJ ns 100 ns Eoff 0.55 1.00 mJ td(on) tri Eon td(off) tfi Eoff 17 35 3.50 177 298 1.60 ns ns mJ ns ns mJ 0.21 0.33 °C/W °C/W Cies Coes Cres IC = 30A, VCE = 10V, Note 1 18 TO-247 (IXGH) Outline VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 600V, RG = 3Ω Note 2 Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 600V, RG = 3Ω Note 2 RthJC RthCK Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions VF IRM trr IF = 30A,VGE = 0V, Note 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Characteristic Value Min. Typ. Max. TJ = 150°C 2.8 V V 4 A 1.6 IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 300V 1 100 TJ = 100°C RthJC ns 0.9 °C/W Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.5 VCES, Higher TJ or Increased RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH40N120C3D1 Fig. 1. Output Characteristics @ 25ºC 80 Fig. 2. Extended Output Characteristics @ 25ºC 250 VGE = 15V 13V 11V 70 200 60 9V 175 50 IC - Amperes IC - Amperes VGE = 15V 13V 225 40 7V 30 11V 150 125 9V 100 75 20 7V 50 10 25 5V 0 5V 0 0 1 2 3 4 5 6 0 3 6 9 Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 1.3 VGE = 15V 13V 11V 70 VGE = 15V 1.2 60 50 7V 40 I 1.1 9V VCE(sat) - Normalized IC - Amperes 15 Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 30 20 C = 80A 1.0 0.9 0.8 I C = 40A I C = 20A 0.7 0.6 10 5V 0.5 0.4 0 0 1 2 3 4 5 25 6 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 8.0 90 TJ = 25ºC 7.5 80 7.0 70 6.0 I C IC - Amperes 6.5 VCE - Volts 12 VCE - Volts VCE - Volts = 80A 5.5 5.0 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 40A 4.5 20 4.0 10 20A 3.5 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 IXGH40N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 TJ = - 40ºC 40 25ºC 30 VGE - Volts g f s - Siemens 35 125ºC 25 20 15 14 VCE = 600V 12 I G = 10mA I C = 40A 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 Fig. 9. Capacitance 80 100 120 140 160 Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 80 70 Cies 1,000 60 IC - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs IC - Amperes Coes 100 Cres 5 10 15 20 25 30 35 40 30 20 TJ = 125ºC 10 RG = 3Ω dV / dt < 10V / ns 0 200 10 0 50 40 400 600 VCE - Volts 800 1000 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_40N120C3(6N)2-18-09-A IXGH40N120C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 6 4.0 9 Eon - Eoff --- TJ = 125ºC , VGE = 15V 5 5 Eoff - MilliJoules Eoff - MilliJoules 2 - MilliJoules 6 I C = 30A 1 4 0 14 18 22 26 2.5 5 2.0 1.5 3 1.0 2 0.0 0 15 30 20 25 30 3.5 1.0 3 0.5 2 t f - Nanoseconds 4 I C = 30A 0.0 55 65 75 85 95 105 115 td(off) - - - - 700 300 600 I 500 200 400 150 I 100 200 50 100 0 4 6 8 10 12 16 18 20 22 24 26 28 350 30 RG = 3Ω , VGE = 15V 190 350 VCE = 600V 180 200 300 170 TJ = 125ºC 160 200 150 150 140 TJ = 25ºC tf 300 td(off) - - - - 180 RG = 3Ω , VGE = 15V t f - Nanoseconds td(off) - - - - 190 I VCE = 600V 250 C = 30A 170 200 160 150 I C = 60A 150 100 140 50 130 130 50 120 0 110 30 35 40 45 50 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 55 60 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 120 125 t d(off) - Nanoseconds tf 400 t d(off) - Nanoseconds t f - Nanoseconds 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 450 25 300 = 60A 0 1 125 210 20 C RG - Ohms 500 15 = 30A C 250 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 100 800 VCE = 600V TJ - Degrees Centigrade 250 60 t d(off) - Nanoseconds 5 45 tf 350 1.5 35 55 TJ = 125ºC, VGE = 15V 6 I C = 60A 25 50 900 400 7 VCE = 600V 2.0 45 450 Eon - MilliJoules Eoff - MilliJoules ---- RG = 3Ω , VGE = 15V 2.5 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 8 Eon 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 1 TJ = 25ºC RG - Ohms 3.0 4 TJ = 125ºC 0.5 3 10 6 VCE = 600V - MilliJoules on 3 7 on 7 ---- E = 60A E C Eon RG = 3Ω , VGE = 15V 3.0 I 4 6 Eoff 3.5 8 VCE = 600V 2 8 IXGH40N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 90 60 tr 160 td(on) - - - - 80 55 TJ = 125ºC, VGE = 15V C 45 = 60A 100 40 80 I C 35 = 30A t r - Nanoseconds t r - Nanoseconds I t d(on) - Nanoseconds 120 22 RG = 3Ω , VGE = 15V 70 50 VCE = 600V td(on) - - - - 21 VCE = 600V 60 20 50 19 TJ = 125ºC, 25ºC 40 18 30 17 60 30 40 25 20 16 20 20 10 15 15 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 14 15 RG - Ohms t d(on) - Nanoseconds 140 23 tr 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 22 80 21 70 20 tr 60 td(on) - - - - RG = 3Ω , VGE = 15V VCE = 600V 50 I 40 C 19 18 = 30A 17 30 t d(on) - Nanoseconds t r - Nanoseconds I C = 60A 16 20 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_40N120C3(6N)2-18-09-A IXGH40N120C3D1 1000 60 A 50 IF 30 TVJ= 100°C 800 Qr TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A nC V = 300V R 0 1 0 100 3 V 2 5 A/μs 1000 -diF /dt VF Fig. 21. Forward Current IF Versus VF Fig. 22. Reverse Recovery Charge Qr Versus -diF/dt 2.0 90 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 -diF /dt 1000 1.00 TVJ= 100°C IF = 30A μs VFR tfr 80 1.0 200 Fig. 23. Peak Reverse Current IRM Versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 -diF /dt Fig. 24. Dynamic Parameters Qr, IRM Versus TVJ Fig. 25. Recovery Time trr Versus -diF/dt 1 K/W 0.1 Z thJC 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient Thermal Resistance Junction to Case Note: Fig. 21to Fig. 22 show typical values © 2009 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 0 0 200 400 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak Forward Voltage VFR and tfr Versus diF/dt