Preliminary Technical Information IXGH30N120C3H1 GenX3TM 1200V IGBT VCES = 1200V = 24A IC100 VCE(sat) ≤ 4.2V = 42ns tfi(typ) High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM TO-247AD 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC100 ICM TC = 25°C TC = 100°C TC = 25°C, 1ms 48 24 115 A A A G IA TC = 25°C 20 A EAS TC = 25°C 250 mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 60 @VCE ≤ 1200 A V PC TC = 25°C 250 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. z 300 260 °C °C z 6 g z TJ TJM Tstg Md Mounting Torque TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight C TAB E G = Gate E = Emitter C = Collector TAB = Collector Features z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Rated International Standard Package Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES VGE= 0V V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 24A, VGE = 15V, Note 2 TJ = 125°C © 2009 IXYS CORPORATION, All rights reserved z 3.6 3.2 5.0 V 100 1.5 μA mA ±100 nA 4.2 V V High Power Density Low Gate Drive Requirement Applications z z z z z AC Motor Speed Control DC Servo and Robot Drives DC Choppers Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies DS100123(03/09) IXGH30N120C3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 24A, VCE = 10V, Note 2 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 10 17 S 1810 185 50 pF pF pF 80 nC 11 nC 37 nC 18 33 1.45 106 42 ns ns mJ ns ns Qg Qge IC = 24A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°C IC = 24A, VGE = 15V VCE = 600V, RG = 5Ω Note 1 Eoff 0.47 td(on) tri Eon td(off) tfi Eoff 20 40 2.50 135 280 1.30 Inductive Load, TJ = 125°C IC = 24A, VGE = 15V VCE = 600V, RG = 5Ω Note 1 RthJC RthCK TO-247 (IXGH) AD Outline 0.21 0.85 mJ 2.10 ns ns mJ ns ns mJ 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 0.50 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 20A, VGE = 0V IRM trr IF = 20A, -diF/dt = 750A/μs, VR = 800V VGE = 0V 3.0 2.8 TJ = 125°C 19 70 RthJC Notes: V V A ns 0.9 °C/W 1. 2. Switching Times May Increase for VCE (Clamp) > 0.5 • VCES, Higher TJ or Increased RG. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH30N120C3H1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 48 180 VGE = 15V 13V 11V 44 40 140 36 32 13V 120 9V 28 IC - Amperes IC - Amperes VGE = 15V 160 24 20 16 100 11V 80 60 7V 12 9V 40 8 20 4 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2 4 6 8 40 16 18 20 22 24 26 28 VGE = 15V 1.4 1.3 VCE(sat) - Normalized 36 IC - Amperes 14 1.5 VGE = 15V 13V 11V 44 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 48 10 VCE - Volts VCE - Volts 32 9V 28 24 20 7V 16 12 1.2 I C = 48A I C = 24A I C = 12A 1.1 1.0 0.9 0.8 8 4 0.7 5V 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 5.5 50 75 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 125 150 Fig. 6. Input Admittance 60 8.0 7.5 55 TJ = 25ºC 50 7.0 45 6.5 6.0 5.5 I C IC - Amperes VCE - Volts 100 TJ - Degrees Centigrade = 48A 5.0 4.5 40 35 30 25 TJ = 125ºC 25ºC - 40ºC 20 24A 4.0 15 3.5 10 3.0 5 12A 2.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGH30N120C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 24 TJ = - 40ºC 22 VCE = 600V 14 I C = 24A 20 25ºC 16 14 I G = 10mA 12 VGE - Volts g f s - Siemens 18 125ºC 12 10 8 10 8 6 4 6 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 65 10 20 Fig. 9. Capacitance 40 50 60 70 80 Fig. 10. Reverse-Bias Safe Operating Area 70 10,000 f = 1 MHz 60 Cies 50 1,000 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs IC - Amperes Coes 100 40 30 20 TJ = 125ºC 10 Cres 0 200 10 0 5 10 15 20 25 30 35 40 RG = 5Ω dV / dt < 10V / ns 400 600 VCE - Volts 800 1000 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N120C3H1(4A)03-10-09 IXGH30N120C3H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 2.8 10 Eoff 2.6 TJ = 125ºC , VGE = 15V Eon - 9 --- 5 = 48A 1.8 4 1.6 3 1.4 5 TJ = 125ºC 1.6 4 1.2 3 0.8 2 2 I C = 24A 1.2 0.4 1 1.0 6 8 10 12 14 16 18 20 22 24 26 28 1 TJ = 25ºC 0.0 0 4 0 10 30 15 20 25 RG - Ohms Eon ---- I C = 48A 1.5 4 1.0 3 I C = 24A 0.5 0.0 55 65 75 85 95 105 115 t f - Nanoseconds Eoff - MilliJoules 5 Eon - MilliJoules 2.0 45 tf td(off) - - - - VCE = 600V 340 I 320 C 300 = 24A 250 300 200 280 150 I 2 260 1 125 240 C = 48A 100 50 4 6 8 10 12 14 16 18 20 22 24 26 28 30 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tf 400 RG = 5Ω , VGE = 15V 350 VCE = 600V td(off) - - - - 500 200 450 tf 185 400 RG = 5Ω , VGE = 15V t d(off) - Nanoseconds 170 300 155 TJ = 125ºC 140 200 125 150 110 160 150 td(off) - - - - 140 VCE = 600V 350 130 300 120 250 110 I 200 C = 24A 100 I C = 48A 150 90 95 100 80 50 80 50 70 0 65 0 TJ = 25ºC 10 15 20 25 30 35 IC - Amperes © 2009 IXYS CORPORATION, All rights reserved 40 45 50 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 60 125 t d(off) - Nanoseconds 450 215 t f - Nanoseconds 500 100 350 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 250 50 t d(off) - Nanoseconds VCE = 600V 35 45 400 360 6 RG = 5Ω , VGE = 15V 25 40 380 7 Eoff 35 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.0 2.5 30 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature t f - Nanoseconds - MilliJoules C VCE = 600V on I - MilliJoules 6 6 E on 2.2 ---- Eon RG = 5Ω , VGE = 15V 2.0 7 2.0 Eoff 8 VCE = 600V 2.4 7 2.4 Eoff - MilliJoules 2.8 E Eoff - MilliJoules 3.0 IXGH30N120C3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 200 160 55 140 50 140 45 I 120 = 48A C 40 100 35 80 I C 30 = 24A 60 19 40 16 13 20 15 0 10 12 14 16 18 20 22 24 26 28 30 10 10 RG - Ohms 25 22 20 8 28 80 40 6 31 TJ = 125ºC, 25ºC 100 25 4 td(on) - - - - VCE = 600V 120 60 20 tr t d(on) - Nanoseconds VCE = 600V 34 RG = 5Ω , VGE = 15V t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 160 t r - Nanoseconds tr 180 60 15 20 25 30 35 40 45 50 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 30 tr 140 td(on) - - - - 28 RG = 5Ω , VGE = 15V t r - Nanoseconds 26 VCE = 600V 100 24 I C = 48A 80 22 60 20 40 18 I C t d(on) - Nanoseconds 120 = 24A 20 16 0 25 35 45 55 65 75 85 95 105 115 14 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N120C3H1(4A)03-10-09