IXYS IXGA30N60C3D4

Preliminary Technical Information
GenX3TM 600V IGBT
With Diode
IXGA30N60C3D4
IXGP30N60C3D4
VCES =
IC110 =
VCE(sat) ≤
tfi(typ) =
High Speed PT IGBTs for
40-100kHz switching
600V
30A
3.0V
47ns
TO-263 (IXGA)
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
A
G
E
TO-220 (IXGP)
IC25
TC = 25°C
60
IC110
TC = 110°C
30
A
ICM
TC = 25°C, 1ms
150
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 5Ω
ICM = 60
A
G
(RBSOA)
Clamped inductive load @ ≤ 600V
PC
TC = 25°C
220
W
-55 ... +150
°C
G = Gate
E = Emitter
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
TL
1.6mm (0.062 in.) from case for 10s
300
°C
TSOLD
Plastic body for 10 seconds
260
°C
Md
Mounting torque (TO-220)
1.13/10
Nm/lb.in.
Weight
TO-220
TO-263
2.5
3.0
g
g
C(TAB)
C
C(TAB)
E
C
= Collector
TAB = Collector
Features
Optimized for low switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
Advantages
High power density
Low gate drive requirement
Symbol Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
BVCES
IC = 250μA, VGE = 0V
600
VGE(th)
IC = 250μA, VCE = VGE
3.5
ICES
Typ.
V
5.5
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
V
75 μA
VCE = VCES
VGE = 0V
Max.
500 μA
TJ = 125°C
±100 nA
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
2.6
1.8
3.0
V
V
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100073(11/08)
IXGA30N60C3D4
IXGP30N60C3D4
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 20A, VCE = 10V, Note 1
9
Cies
Coes
16
S
915
pF
78
pF
Cres
32
pF
Qg
38
nC
Qge
VCE = 25V, VGE = 0V, f = 1MHz
TO-263 (IXGA) Outline
8
nC
Qgc
17
nC
td(on)
16
ns
tri
Eon
td(off)
tfi
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
26
ns
0.27
mJ
42
VCE = 300V, RG = 5Ω
Eoff
0.09
td(on)
17
tri
Eon
td(off)
tfi
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Eoff
ns
ns
0.18
mJ
ns
28
ns
0.44
mJ
70
ns
90
ns
0.33
mJ
RthJC
RthCS
75
47
0.56 °C/W
TO-220
0.50
°C/W
TO-220 (IXGP) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VF
trr
IRM
Characteristic Values
Min.
Typ.
Max.
IF = 10A, VGE = 0V, Note 1
IF = 10A, -diF/dt = 200A/μs
VR = 300V
3.0
TJ = 150°C
TJ = 100°C
1.7
V
V
60
ns
TJ = 25°C
TJ = 100°C
3
4
RthJC
A
A
Pins:
2.5 °C/W
1 - Gate
3 - Source
2 - Drain
4 - Drain
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
7,005,734 B2
6,759,692
7,063,975 B2
6,771,478 B2 7,071,537
7,157,338B2
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
180
VGE = 15V
13V
35
140
30
11V
120
25
IC - Amperes
IC - Amperes
VGE = 15V
160
20
9V
15
10
13V
100
11V
80
60
9V
40
5
7V
20
0
7V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0
2
4
6
8
12
14
16
18
20
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
40
1.1
VGE = 15V
13V
11V
35
VGE = 15V
1.0
VCE(sat) - Normalized
30
IC - Amperes
10
VCE - Volts
VCE - Volts
9V
25
20
15
I
C
= 40A
0.9
0.8
I
C
= 20A
0.7
10
I
0.6
5
C
= 10A
7V
0.5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
25
3.2
50
VCE - Volts
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
70
5.5
TJ = 25ºC
60
5.0
50
I
4.0
C
IC - Amperes
VCE - Volts
4.5
= 40A
20A
10A
3.5
40
TJ = 125ºC
25ºC
- 40ºC
30
20
3.0
10
2.5
0
7
8
9
10
11
12
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
13
14
15
5
6
7
8
VGE - Volts
9
10
11
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 8. Gate Charge
Fig. 7. Transconductance
24
16
TJ = - 40ºC
22
18
16
125ºC
14
I C = 20A
I G = 10 mA
12
25ºC
VGE - Volts
g f s - Siemens
VCE = 300V
14
20
12
10
8
6
10
8
6
4
4
2
2
0
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
40
10,000
60
50
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
f = 1 MHz
Coes
100
40
30
20
TJ = 125ºC
10
Cres
0
100
10
0
5
10
15
20
25
30
35
40
RG = 5Ω
dV / dt < 10V / ns
200
300
400
500
600
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_30N60C3(4D)7-25-08
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.8
Eon -
Eoff
0.7
1.4
0.6
1.2
0.5
1.2
Eoff
---
TJ = 125ºC , VGE = 15V
0.3
I C = 20A
0.2
8
10
12
14
16
18
Eoff - MilliJoules
Eoff - MilliJoules
0.6
0.8
TJ = 125ºC
0.3
0.6
0.2
0.4
0.1
0.2
0.0
0.4
TJ = 25ºC
15
20
RG - Ohms
E
0.8
0.3
0.6
0.2
0.4
0.2
0
55
65
tf
160
TJ = 125ºC, VGE = 15V
75
td(off) - - - -
110
140
100
130
I
85
95
105
115
80
110
70
I
50
40
4
6
8
10
140
80
60
60
50
40
40
TJ = 25ºC
20
30
0
20
35
40
t f - Nanoseconds
t f - Nanoseconds
70
© 2008 IXYS CORPORATION, All rights reserved
18
20
td(off) - - - -
80
RG = 5Ω , VGE = 15V
120
70
100
60
I C = 40A, 20A
80
50
60
40
40
30
20
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
20
125
t d(off) - Nanoseconds
100
IC - Amperes
16
VCE = 300V
t d(off) - Nanoseconds
80
TJ = 125ºC
30
14
90
tf
90
25
12
160
100
VCE = 300V
20
60
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
RG = 5Ω , VGE = 15V
15
= 20A
80
110
10
C
RG - Ohms
td(off) - - - -
120
90
= 40A
90
0.0
125
180
140
C
120
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
160
120
VCE = 300V
150
TJ - Degrees Centigrade
tf
130
100
I C = 20A
45
- MilliJoules
0.4
t f - Nanoseconds
1.0
I C = 40A
35
170
t d(off) - Nanoseconds
VCE = 300V
25
40
140
1.2
on
Eoff - MilliJoules
----
RG = 5Ω , VGE = 15V
0.1
35
180
1.4
0.5
30
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
0.7
Eon
25
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eoff
0.2
0.0
10
20
- MilliJoules
0.4
- MilliJoules
0.8
0.4
on
1.0
= 40A
0.5
0.6
1.0
E
C
on
I
E
0.6
6
----
VCE = 300V
VCE = 300V
4
Eon
RG = 5Ω , VGE = 15V
IXGA30N60C3D4
IXGP30N60C3D4
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
90
td(on) - - - -
28
TJ = 125ºC, VGE = 15V
60
I
C
24
= 40A
50
22
40
20
30
I
C
20
10
4
6
8
10
12
14
16
18
22
RG = 5Ω , VGE = 15V
VCE = 300V
50
20
TJ = 125ºC
40
18
TJ = 25ºC
30
16
20
14
16
10
12
14
0
18
= 20A
td(on) - - - -
10
10
20
t d(on) - Nanoseconds
26
t d(on) - Nanoseconds
VCE = 300V
70
24
tr
60
t r - Nanoseconds
80
t r - Nanoseconds
70
30
tr
15
20
25
30
35
40
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
21
75
70
65
20
I C = 40A
t r - Nanoseconds
55
tr
50
td(on) - - - -
RG = 5Ω , VGE = 15V
45
VCE = 300V
19
18
40
35
I
30
C
17
= 20A
t d(on) - Nanoseconds
60
16
25
20
15
25
35
45
55
65
75
85
95
105
115
15
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_30N60C3(4D) 7-25-08
IXGA30N60C3D4
IXGP30N60C3D4
30
250
A
nC
25
20
T VJ = 100°C
15
IF = 5 A
150
IF = 10 A
8
IRM
Qr
IF = 5 A
A
V R = 300 V
200
T VJ = 150°C
IF
10
T VJ = 100°C
IF = 20 A
6
I F = 10 A
I F = 20 A
100
4
50
2
T VJ = 100°C
10
5
0
T VJ = 25°C
0
1
2
0
100
V
3
VF
Fig. 21. Forward current IF versus VF
Fig. 22. Reverse recovery charge Qr
2.0
ns
V R = 300 V
400
600 A/μs
800 1000
-diF/dt
0.3
T VJ = 100°C
μs
I F = 10 A
V FR
t fr
0.2
40
IF = 5 A
80
I F = 10 A
1.0
I F = 20 A
I RM
60
20
t fr
V FR
0.5
Qr
0.0
200
Fig. 23. Peak reverse current IRM
V
trr
Kf
0
60
T VJ = 100°C
100
1.5
0
A/μs 1000
-diF/dt
V R = 300 V
0
40
40
80
120 C 160
0
200
T VJ
400
600
800 1000
A/μs
0
0
200
400
-diF/dt
Fig. 24. Dynamic parameters Qr, IRM
Fig. 25. Recovery time trr versus -diF/dt
10
0.0
600 A/μs
800 1000
diF/dt
Fig. 26. Peak forward voltage VFR and
Constants for ZthJC calculation:
K/W
i
1
1
2
Z thJC
0.1
0.01
0.001
0.00001
0.1
DSEP 8-06B
0.0001
0.001
0.01
Fig. 27. Transient thermal resistance junction-to-case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2008 IXYS CORPORATION, All rights reserved
0.1
s
t
1
Rthi (K/W)
ti (s)
1.449
0.5578
0.0052
0.0003