SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T P D L G FEATURES ・VDSS=40V, ID=6A. A ・Drain-Source ON Resistance. RDS(ON)=38mΩ (Max.) @VGS=10V 8 5 RDS(ON)=50mΩ (Max.) @VGS=4.5V ・Super High Dense Cell Design B1 B2 ・Very fast switching 1 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25℃ Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage VDSS 40 V Gate Source Voltage VGSS ±12 V ID * 6 A IDP 24 A Peak Diode Recovery dv/dt (Note 2) dv/dt 4.5 V/ns Peak Diode Recovery di/dt di/dt 200 A/us Single pulsed Avalanche Energy (Note 3) EAS 66 mJ Repetitive Avalanche Energy (Note 1) EAR 2.7 mJ Tj -50~150 ℃ Tstg -50~150 ℃ RthJA* 62.5 ℃/W Ta=25℃ FLP-8 Drain Current Pulsed(Note1) Maximum Junction Temperature Storage Temperature Range Marking Type Name KMD6D0DN 40Q 101 Thermal Resistance, Junction to Ambient Lot No. * : Surface Mounted on FR4 Board (25mm×25mm, 1.5t, t≤10sec) PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 S2 3 6 D2 3 6 G2 4 5 D2 4 5 2012. 7. 26 Revision No : 0 1/5 KMD6D0DN40Q ELECTRICAL CHARACTERISTICS (Tj=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250μA, VGS=0V 40 - - V Drain Cut-off Current IDSS VDS=40V, VGS=0V - - 1 μA Gate Leakage Current IGSS VGS=±12V, VDS=0V - - ±10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 1.0 2.0 2.5 V VGS=10.0V, ID=6A - 27 38 VGS=4.5V, ID=5A - 35 50 VDS=10V, ID=6A(Note4, 5) - 10 - - 460 - - 80 - Drain-Source Breakdown Voltage Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs mΩ S Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 50 - Total Gate Charge Qg - 8.0 - Gate-Source Charge Qgs - 1.5 - Gate-Drain Charge Qgd - 2.0 - Total Gate Charge Qg - 4.1 - - 12 - VDD=20V, VGS=10V - 8 - ID=6A, RG=6Ω (Note4, 5) - 35 - - 6 - - 0.87 1.2 Turn-On Delay Time VDS=15V, f=1MHz, VGS=0V VDS=20V, VGS=10V, ID=6A (Note4, 5) VDS=20V, VGS=5V, ID=6A (Note4, 5) td(on) tr Turn-On Rise Time pF nC nC ns Turn-Off Delay Time td(off) tf Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF IDR=6A, VGS=0V V Note1) Repetivity rating : Pulse width Limited by juntion temperature. Note2) IS ≤6A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note3) L = 1mH, IAS = 6A, VDD = 32V, Rg = 25Ω, Starting Tj = 25℃. Note4) Pulse test : Pulse width ≤ 300㎲ , Duty cycle ≤ 2% Note5) Essentially independenl of operating temperature. 2012. 7. 26 Revision No : 0 2/5 KMD6D0DN40Q Fig1. ID - VDS VGS=4.5 Drain Current ID (A) VGS=10 Common Source Tc= 25 C Pulse Test 16 VGS=5 12 VGS=4.0 8 VGS=3.5 4 VGS=3.0 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) 20 Fig2. RDS(on) - ID 0.16 Common Source 0.14 Tc= 25 C Pulse Test 0.12 0.1 0.08 0.06 V GS=4.5 0.02 0 0 5 Drain - Source Voltage VDS (V) 100 Drain Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) VDS=10V Pulse Test 1 25 C 100 80 Common Source VDS=10V Pulse Test 60 40 20 3 4 5 6 7 8 9 10 -80 -40 Fig5. Vth - Tj 40 80 120 160 Fig6. IDR - VSDF Reverse Drain Current IDR (A) 5 Common Source VGS=VDS ID=250µA 4 Pulse Test 3 2 1 0 -80 0 Junction Temperature Tj ( C ) Gate - Source Voltage VGS (V) Gate Threshold Voltage Vth (V) 20 0 2 102 Common Drain VGS=0V Pulse Test 101 25 C 100 C 0 10 -40 0 40 80 120 Junction Temperature Tj ( C) 2012. 7. 26 15 Fig4. RDS(on) - Tj 102 Common Source 100 C 10 Drain Current ID (A) Fig3. ID - VGS 10 VGS=10V 0.04 Revision No : 0 160 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMD6D0DN40Q Fig7. Qg - VGS Fig8. Safe Operation Area 102 Operation in this ID=6A area is limited by RDS(ON) 10 Drain Current ID (A) Gate-Source Voltage VGS (V) 12 8 VDS=20V 6 4 2 10µs 101 100µs 100 1ms 10ms 100ms 10-1 Tc= 25 C Tj = 150 C 2 Single pulse 0 0 2 4 6 8 10 12 14 10 10-1 16 DC 101 100 102 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Transient Thermal Resistance (Ƅ.W) Fig9. Transient Thermal Response Curve 102 Single Pluse 101 0.01 10 0 0.02 0.05 0.1 0.2 0.5 PDM t1 t2 Duty Cycle D = t1/t2 -1 10 10-4 10-3 10-2 10-1 0 10 101 TIME (sec) 2012. 7. 26 Revision No : 0 4/5 KMD6D0DN40Q Fig. 10 Gate Charge VGS 10 V Schottky Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 11 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2012. 7. 26 Revision No : 0 td(off) tf toff 5/5