SEMICONDUCTOR KU3600N10D TECHNICAL DATA N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. A C K D L B FEATURES ・VDSS(Min.)= 100V, ID= 5A H J ・Drain-Source ON Resistance : RDS(ON)=0.36 Ω(max) @VGS =10V ・Qg(typ.) =4.2nC N F MAXIMUM RATING (Tc=25℃) CHARACTERISTIC E G 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V F 2 M 3 DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.50 + 0.10 L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O 1. GATE 2. DRAIN 3. SOURCE O @TC=25℃ Drain Current 5 DPAK (1) ID @TC=100℃ 3.1 A IDP 13 EAS 12.4 mJ EAR 0.1 mJ dv/dt 4.5 V/ns 22.7 W 0.18 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 5.5 ℃/W Thermal Resistance, Junction-toAmbient RthJA 110 ℃/W Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TA=25℃ PD Derate above25℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics PIN CONNECTION 2013. 7. 02 Revision No : 0 1/6 KU3600N10D ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 100 - - V ID=250μA, Referenced to 25℃ - 0.1 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=2.5A - 0.30 0.36 - 0.40 - 4.2 5.5 - 1.0 - - 1.5 - - 20 - - 15 - - 50 - Ω RDS(ON) Drain-Source ON Resistance VGS=6V, ID=2.0A Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=80V, ID=1.7A VGS=10V VDD=50V, ID=1.7A RG=25Ω td(off) Turn-off Delay time (Note4,5) (Note4,5) VGS=10V ns Turn-off Fall time tf - 10 - Input Capacitance Ciss - 230 320 Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 9.0 - - - 2.5 - - 10 VDS=25V, VGS=0V, f=1.0MHz nC pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=2.5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=1.7A, VGS=0V, - 60 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.10 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 5mH, IS=1.7A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤1.7A, dI/dt≤300A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking KU 3600N10 D 2013. 7. 02 Revision No : 0 2/6 KU3600N10D VDS = 10V VDS = 7V, 10V VDS = 5V TC = 100℃ VDS = 4.5V TC = 25℃ 2 0 4 6 8 1.2 1.0 0.8 0.6 0.4 0.2 6 IDS=2.5A 0 2013. 7. 02 0.5 1.0 Revision No : 0 1.5 3/6 KU3600N10D Fig 7. C - VDS Fig8. Qg- VGS 103 Gate - Source Voltage VGS (V) 12 Capacitance (pF) Ciss 102 Coss Crss 101 100 0 5 10 15 20 25 30 35 ID=1.7A 10 VDS = 80V 8 6 4 2 0 1 0 40 4 5 6 125 150 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig10. ID - Tj Fig9. Safe Operation Area 102 6 Operation in this area is limited by RDS(ON) 5 Drain Current ID (A) Drain Current ID (A) 3 2 101 10µs 100µs 100 1ms Tc= 25 C Tj = 150 C Single pulse 10-1 101 3 2 1 10ms DC 100 4 0 102 0 50 25 Drain - Source Voltage VDS (V) 75 100 Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve Transient Thermal Resistance 101 Duty=0.5 100 0.20 0.10 PDM t1 5 0.02 0.01 lse 0 . 0 Pu gle Sin 10-1 10-5 t2 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2013. 7. 02 Revision No : 0 4/6 KU3600N10D Fig12. Gate Charge VGS 5V RL 0.8 VDSS ID Q VDS Qgd Qgs Qg VGS Fig13. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% td(off) 25 Ω VDS td(on) ton 10V 2013. 7. 02 tr tf toff VGS Revision No : 0 5/6 KU3600N10D Fig15. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS ISD di/dt (DUT) L IRM ISD 0.5 Body Diode Reverse Current VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2013. 7. 02 VGS Revision No : 0 Body Diode Forword Voltage drop 6/6