SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. H T P D L G FEATURES A VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V 8 5 B1 B2 Super High Dense Cell Design 1 High Power and Current Handing Capability MAXIMUM RATING (Ta=25 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS DC 20 V ID * 6 A IDP 20 A IS 1.3 A 2 W 1.6 W FLP-8 Drain Current Pulsed (note1) Drain Source Diode Forward Current 25 PD * Drain Power Dissipation 100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Tj -50~150 Tstg -50~150 RthJA* 78 /W * : Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) 2007. 4. 3 S1 1 8 D1 1 8 G1 2 7 D1 2 7 6 5 S2 3 6 D2 3 G2 4 5 D2 4 Revision No : 0 1/5 KMB6D0DN30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250 A, VGS=0V 30 - - V Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A Gate Leakage Current IGSS VGS= - - 100 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 2 3 V VGS=10.0V, ID=6A - 24 28 VGS=4.5V, ID=4.9A - 35 42 VDS=5V, VGS=10A 20 - - A - 20 - S - 740 - - 170 - Drain-Source Breakdown Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance 25V, VDS=0V RDS(ON) ID(ON) Gfs m VDS=10V, ID=6A Dynamic (Note 3) Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 75 - Total Gate Charge Qg - 7 10 Gate-Source Charge Qgs - 3.8 - Gate-Drain Charge Qgd - 2.5 - Turn-On Delat Time td(on) - 8 16 Turn-On Rise Time tr VDD=15V, VGS=10V - 13 24 ID=1A, RG=6 - 18 29 - 8 6 - 0.75 1.2 VDS=15V, f=1MHz, VGS=OV VDS=10V, VGS=5V, ID=6A pF nC ns Turn-On Deley Time td(off) (Note 1) tr Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF IDR=1.7A, VGS=0V V Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% * Upper electrical characteristics can be changed because these are tentative specifications. * Graphs are omitted because these are tentative specifications. 2007. 4. 3 Revision No : 0 2/5 KMB6D0DN30QA Fig2. RDS(on) - ID 20 VGS=4.5 Drain Current ID (A) VGS=10 Common Source Tc= 25 C Pulse Test 16 VGS=5 12 VGS=4.0 8 VGS=3.5 4 VGS=3.0 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 0.16 Common Source 0.14 Tc= 25 C Pulse Test 0.12 0.1 0.08 VGS=4.5 0.06 0.04 VGS=10.0 0.02 0 0 5 Drain - Source Voltage VDS (V) Normalized Drain Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) 50 Common Source VDS=5V Pulse Test 15 10 125 C 25 C 5 -55 C Common Source VDS=10V Pulse Test 40 30 20 10 0 1 2 3 4 5 -80 -40 0 Fig5. Vth - Tj 10 Reverse Drain Current IDR (A) VGS=VDS ID=250µA 4 Pulse Test 3 2 1 -40 80 0 40 120 160 Fig6. IDR - VSDF 5 Common Source 0 -80 40 Junction Temperature Tj ( C ) Gate - Source Voltage VGS (V) Gate Threshold Voltage Vth (V) 20 Fig4. RDS(on) - Tj 0 80 120 Junction Temperature Tj ( C ) 2007. 4. 3 15 Drain Current ID (A) Fig3. ID - VGS 20 10 Revision No : 0 160 Common Source Tc= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMB6D0DN30QA Normalized Effective Transient Thermal Resistance Fig7. Transient Thermal Response Curve 1 0.5 0.2 10-1 0.1 0.05 PDM 0.02 0.01 t1 t2 10-2 RθJA(t) = r(t) RθJA RθJA= 135 C/W TJ-TA=P RθJA(t) Duty Cycle D = t1/t2 Single Pluse 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) Fig8. Safe Operation Area Drain Current ID (A) 102 Operation in this area is limited by RDS(ON) 100µs 1ms 101 10ms 100ms 1s DC 10s 100 10-1 VGS= 10V SINGLE PULSE RθJA = 135 C/W TA = 25 C 10-2 -1 10 100 101 102 Drain - Source Voltage VDS (V) 2007. 4. 3 Revision No : 0 4/5 KMB6D0DN30QA Fig. 9 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 10 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2007. 4. 3 Revision No : 0 td(off) tf toff 5/5