SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A C K D L B FEATURES ・VDSS= 500V, ID= 4.3A H ・Drain-Source ON Resistance : RDS(ON)=1.4Ω(Max) @VGS = 10V J E N G ・Qg(typ) = 12nC F F M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V @TC=25℃ @TC=100℃ Drain Current 2.7 A 13 EAS 270 mJ EAR 8.6 mJ dv/dt 20 V/ns 59.5 W 0.48 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 2.1 ℃/W Thermal Resistance, Junction-toAmbient RthJA 110 ℃/W Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Tc=25℃ Drain Power Dissipation PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range 2 3 1. GATE 2. DRAIN 3. SOURCE 4.3 ID IDP Pulsed (Note1) 1 DPAK (1) Thermal Characteristics PIN CONNECTION (KF5N50DZ) (KF5N50D) D D G G S 2008. 12. 3 S Revision No : 1 1/6 KF5N50D/DZ ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 500 - - V ID=250㎂, Referenced to 25℃ - 0.55 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂ , VGS=0V Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.0 - 4.0 V Gate Leakage Current IGSS RDS(ON) Drain-Source ON Resistance KF5N50D VGS=±30V, VDS=0V - - ±100 nA KF5N50DZ VGS=±25V, VDS=0V - - ±10 ㎂ - 1.10 1.4 Ω - 12 - - 3.4 - - 4.5 - - 23 - - 17 - - 40 - - 13 - VGS=10V, ID=2.5A Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time Turn-off Fall time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=400V, ID=5A VGS=10V (Note4,5) VDD=250V RL=50Ω RG=25Ω (Note4,5) KF5N50D VDS=25V, VGS=0V, - 510 - KF5N50DZ f=1.0MHz - 440 - - 69 - - 6 - - - 5 - - 20 VDS=25V, VGS=0V, f=1.0MHz nC ns pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, - 300 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 3.1 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. Marking 1 1 KF5N50 801 D 2 KF5N50 801 DZ 2 1 PRODUCT NAME 2 LOT NO 2008. 12. 3 Revision No : 1 2/6 KF5N50D/DZ Fig1. ID - VDS Fig2. ID - VGS VDS=30V Drain Current ID (A) Drain Current ID (A) 100 VGS=10V 10 VGS=7V VGS=5V 1 10 1 TC=100 C 10 25 C 0 -1 0.1 10 0.1 10 1 2 100 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 3.0 1.1 1.0 0.9 0 -50 50 100 2.5 VGS=6V 2.0 1.5 VGS=10V 1.0 0.5 0 0 150 2 4 Junction Temperature Tj ( C ) 3.0 2 Normalized On Resistance Reverse Drain Current IS (A) 1 10 TC=100 C 25 C 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 2008. 12. 3 Revision No : 1 8 10 12 Fig6. RDS(ON) - Tj 10 0.2 6 Drain Current ID (A) Fig5. IS - VSD 10 10 Fig4. RDS(ON) - ID VGS = 0V IDS = 250 0.8 -100 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 6 1.6 1.8 2.5 VGS =10V IDS = 2.5A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/6 KF5N50D/DZ Fig 7. C - VDS Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) 1000 Capacitance (pF) Ciss 100 Coss 10 Crss 1 0 5 10 15 20 25 30 35 ID=5A 10 8 VDS = 400V VDS = 250V 6 VDS = 100V 4 2 0 0 40 2 6 4 10 12 14 16 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig10. ID - Tj Fig9. Safe Operation Area (KF5N50D, KF5N50DZ) 102 Operation in this 8 6 5 101 Drain Current ID (A) Drain Current ID (A) area is limited by RDS(ON) 10µs 100µs 100 1ms 10ms 100ms DC 10-1 Tc= 25 C Tj = 150 C 2 Single pulse 10 0 10 4 3 2 1 102 1 10 0 103 0 50 25 Drain - Source Voltage VDS (V) 75 100 125 150 Junction Temperature Tj ( C) Transient Thermal Resistance Fig11. Transient Thermal Response Curve Duty=0.5 100 0.2 0.1 0.05 10-1 PDM 0.02 t1 0.01 t2 e gle Sin 10-2 10-5 ls Pu - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2008. 12. 3 Revision No : 1 4/6 KF5N50D/DZ Fig12. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig13. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2008. 12. 3 VGS Revision No : 1 td(on) ton tr td(off) tf toff 5/6 KF5N50D/DZ Fig15. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.5 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2008. 12. 3 VGS Revision No : 1 Body Diode Forword Voltage drop 6/6