MBR10..PbF Series Schottky Rectifier, 10 A FEATURES • • • • • 150 °C TJ operation Pb-free TO-220 and D2PAK packages Available High frequency operation RoHS* Low forward voltage drop COMPLIANT High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Lead (Pb)-free (“PbF” suffix) • Designed and qualified for industrial level Base cathode 2 TO-220AC 1 Cathode 3 Anode PRODUCT SUMMARY DESCRIPTION IF(AV) 10 A VR 35/45 V IRM 15 mA at 125 °C This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IF(AV) Rectangular waveform 10 IFRM TC = 135 °C 20 VRRM IFSM tp = 5 µs sine VF 10 Apk, TJ = 125 °C TJ Range UNITS A 35/45 V 1060 A 0.57 V - 65 to 150 °C MBR1035PbF MBR1045PbF UNITS 35 45 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 135 °C, rated VR 10 Peak repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 135 °C 20 5 µs sine or 3 µs rect. pulse Non-repetitive peak surge current Non-repetitive avalanche energy Repetitive avalanche current IFSM Following any rated load condition and with rated VRRM applied Surge applied at rated load conditions halfwave, single phase, 60 Hz UNITS A 1060 A 150 EAS TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A www.kersemi.com 1 MBR10..PbF Series ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A VFM (1) Maximum forward voltage drop TJ = 25 °C 10 A TJ = 125 °C 20 A Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) TJ = 25 °C Rated DC voltage TJ = 125 °C TJ = TJ maximum VALUES UNITS 0.84 V 0.57 0.72 0.1 mA 15 0.354 V 17.6 mΩ Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 600 pF Typical series inductance LS Measured from top of terminal to mounting plane 8.0 nH 10 000 V/µs VALUES UNITS Forward slope resistance rt Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 µs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance, junction to case RthJC DC operation 2.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased (only for TO-220) 0.50 Marking device www.kersemi.com 2 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque °C Case style TO-220AC MBR1045 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 IR - Reverse Current (mA) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 100 °C TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) IF - Instantaneous Forward Current (A) MBR10..PbF Series 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1.0 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.kersemi.com 3 MBR10..PbF Series 10 Average Power Loss (W) Allowable Case Temperature (°C) 150 145 140 DC Square wave (D = 0.50) Rated VR applied 135 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 6 RMS limit 4 2 DC See note (1) 120 0 0 3 6 9 12 15 0 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.kersemi.com 4 MBR10..PbF Series ORDERING INFORMATION TABLE Device code MBR 10 45 PbF 1 2 3 4 1 - Schottky MBR series 2 - Currrent rating (10 = 10 A) 3 - Voltage ratings 4 - 35 = 35 V 45 = 45 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95221 Part marking information http://www.vishay.com/doc?95216 SPICE model http://www.vishay.com/doc?95293 www.kersemi.com 5