KERSEMI MBR1045PBF

MBR10..PbF Series
Schottky Rectifier, 10 A
FEATURES
•
•
•
•
•
150 °C TJ operation
Pb-free
TO-220 and D2PAK packages
Available
High frequency operation
RoHS*
Low forward voltage drop
COMPLIANT
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Base
cathode
2
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
DESCRIPTION
IF(AV)
10 A
VR
35/45 V
IRM
15 mA at 125 °C
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IF(AV)
Rectangular waveform
10
IFRM
TC = 135 °C
20
VRRM
IFSM
tp = 5 µs sine
VF
10 Apk, TJ = 125 °C
TJ
Range
UNITS
A
35/45
V
1060
A
0.57
V
- 65 to 150
°C
MBR1035PbF
MBR1045PbF
UNITS
35
45
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 135 °C, rated VR
10
Peak repetitive forward current
IFRM
Rated VR, square wave, 20 kHz, TC = 135 °C
20
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
Following any rated load condition
and with rated VRRM applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
UNITS
A
1060
A
150
EAS
TJ = 25 °C, IAS = 2 A, L = 4 mH
8
mJ
IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
A
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MBR10..PbF Series
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
20 A
VFM (1)
Maximum forward voltage drop
TJ = 25 °C
10 A
TJ = 125 °C
20 A
Maximum instantaneous reverse current
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
Rated DC voltage
TJ = 125 °C
TJ = TJ maximum
VALUES
UNITS
0.84
V
0.57
0.72
0.1
mA
15
0.354
V
17.6
mΩ
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
600
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
10 000
V/µs
VALUES
UNITS
Forward slope resistance
rt
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
- 65 to 150
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
(only for TO-220)
0.50
Marking device
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2
°C/W
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
°C
Case style TO-220AC
MBR1045
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.2
IR - Reverse Current (mA)
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
5
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
IF - Instantaneous Forward Current (A)
MBR10..PbF Series
10
1
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
1.0
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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MBR10..PbF Series
10
Average Power Loss (W)
Allowable Case Temperature (°C)
150
145
140
DC
Square wave (D = 0.50)
Rated VR applied
135
130
125
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
6
RMS limit
4
2
DC
See note (1)
120
0
0
3
6
9
12
15
0
2
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition and
with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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MBR10..PbF Series
ORDERING INFORMATION TABLE
Device code
MBR
10
45
PbF
1
2
3
4
1
-
Schottky MBR series
2
-
Currrent rating (10 = 10 A)
3
-
Voltage ratings
4
-
35 = 35 V
45 = 45 V
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95221
Part marking information
http://www.vishay.com/doc?95216
SPICE model
http://www.vishay.com/doc?95293
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