MBR1645 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Schottky Rectifier, 16 A Available RoHS* COMPLIANT FEATURES 150°C T J operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Base cathode 2 DESCRIPTION 1 Cathode The MBR1645 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. 3 Anode TO-220AC APPLICATIONS PRODUCT SUMMARY Switching mode power supplies Converters Freewheeling diodes Reverse battery protection. Package TO-220AC l F(AV) 16A VR 45V V F at l F 0.57V l RM max . 40mA at 125°C T J max. 150°C Diode variation Single die E AS 24 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUE UNIT 16 A 45 V t p = 5 μs sine 1800 A VF 16 A pk , T J = 125°C 0.57 V TJ Range -65 to 150 °C MBR1645 UNIT 45 V l F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage www.nellsemi.com SYMBOL VR V RWM Page 1 of 5 MBR1645 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current Non-repetitive peak surge current l F(AV) l FSM TEST CONDITIONS VALUE UNIT 16 A T C = 134°C, rated V R Following any rated load 5 μs sine or 3 μs rect.pulse condition and with rated V RRM applied 1800 A Surge applied at rated load condition half wave single phase 60 Hz 150 Non-repetitive avalanche energy E AS T J = 25°C, l AS = 3.6A, L = 3.7mH 24 mJ Repetitive avalanche current l AR Current decaying linearly to zero in 1 μs Frequency limited by T J maximum V A = 1.5 x V R typical 3.6 A SYMBOL TEST CONDITIONS VALUE UNIT ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Maximum instantaneous reverse current 16A T J = 25°C 0.63 16A T J = 125°C 0.57 V FM (1) l RM (1) V T J = 25°C 0.2 Rated DC voltage mA T J = 125°C 40 Maximum junction capacitance CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance LS Measured from top of terminal to mounting plane Maximum voltage rate of change dV/dt Rated V R 1400 pF 8 nH 10000 V/µs Note (1) Pulse width < 300 µs, duty cycle < 2% THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS VALUE Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range T stg -65 to 175 UNIT °C Maximum thermal resistance, junction to case R thJC DC operation Typical thermal resistance, case to heatsink R thCS Mounting surface, smooth and greased 1.5 °C/W 0.5 2 g 0.07 oz. 6 (5) kgf . cm (lbf . in) Approximate weight Mounting torque Marking device www.nellsemi.com minimum maximum 12 (10) Case style TO-220AC Page 2 of 5 MBR1645 MBR1645 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Ordering Information Table Device code MBR 16 45 1 2 3 1 - Schottky MBR series 2 - Current rating 3 - Voltage ratings (16 = 16A) Fig.2 Typical values of reverse current vs. reverse voltage Fig.1 Maximum forward voltage drop characteristics 100 100 T J =150°C Reverse current, l R (μA) lnstantaneous forward current, I F (A) 45=45V 10 T J =150°C T J =125°C T J =25°C 1 0 0.2 0.4 0.6 0.8 1.0 10 T J =125° C 1 T J =100° C 0.1 T J =75° C T J =50 °C 0.01 T J =25 °C 0.001 0.0001 1.2 0 Forward voltage drop, V FM (V) 1000 T J =25°C 20 30 40 20 25 30 35 40 45 155 150 145 140 50 DC Square wave (D = 0.50) Rated V R applied 135 130 125 See note (1) 120 0 5 10 15 20 Average forward current, l F(AV) (A) Reverse voltage, V R (V) www.nellsemi.com 15 Fig.4 Maximum allowable case temperature vs. average forward current Allowable case temperature ( ° C) Junction capacitance, C T (pF) 10000 10 10 Reverse voltage, V R (V) Fig.3 Typical junction capacitance vs. reverse voltage 100 0 5 Page 3 of 5 25 MBR1645 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Fig.5 Maximum thermal impedance R th(j-c) characteristics Thermal lmpedance, R th(j-c) (°C/W) 10 1 P DM 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.01 t1 t2 Notes: 1. Duty Factor D =t 1 /t 2 2.Peak T J = PDM x R th(j-c) +T C 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 Rectangular pulse duration, t 1 (s) Fig.7 Maximum non-repetitive surge current (per leg) Non-repetitive surge current, l FSM (A) Fig.6 Forward power loss characteristics Average power loss (W) 15 10 RMS limit D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 5 DC 0 5 0 10 15 20 25 10000 At any rated load condition and with rated V RRM applied following surge 1000 100 10 1 Average forward current, l F(AV) (A) L IRFP460 Rg = 25Ω Current monitor Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6); Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R www.nellsemi.com 1000 Square wave pulse duration, t p ( µ s) Fig.8 Unclamped inductive test circuit D.U.T. 100 Page 4 of 5 High-speed switch Freewheel diode 40HFL40S02 + V d = 25V 10000 MBR1645 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors TO-220AC Package Outline MBR1645 2 pins 10.26 [0.404] 9.98 [0.393] Cathode 4.72 [0.186] 4.42 [0.174] 2.90 [ 0.114] 2.59 [0.102] 1.47 [0.058] 1.19 [0.047] Ø3.89 [0.153] Ø3.78 [0.149] 12.90 [0.508] 12.50 [0.492] 9.19 [0.362] 8.99 [0.354] 3.91 [0.154] 3.40 [0.134] 2.79 [ 0.110] 2.51 [0.099] 13.49 [0.531] 13.08 [0.515] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.46 [0.018] 0.36 [0.014] 2.54 [0.100] TYP 5.18 [0.204] 4.98 [0.196] 0.034 [0.86] 0.030 [0.76] Base cathode 2 1 Cathode www.nellsemi.com Page 5 of 5 3 Anode

- Similar pages
- MBR30100PT Series
- MBR1545CT、MBR1560CT Series
- KERSEMI MBR1045PBF
- KERSEMI VS-MBR3035CT-1PbF
- KERSEMI VS
- KERSEMI MBR4045CT
- MBR6060PT Series - 勿動
- MBR3045CT Series
- NKS100-150 Series - 勿動
- NKS200-100 Series
- NKS200-150 Series - 勿動
- NKSD400-100 Series
- NELLSEMI NKSD300-100
- NKSD400-150 Series
- NKSD200-100 Series
- MBR1635 MBR1645.aspx?ext=