RoHS RoHS MBR3045CT Series SEMICONDUCTOR Nell Semiconductors Dual Common Cathode Schottky Rectifier, Available RoHS* 30A (15A x2), 45V COMPLIANT FEATURES 150°C T J operation High frequency operation CASE PIN 2 Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 275°C maximum, 10 s per JESD 22B-106 (for TO-220AB and ITO-220AB package) 1 2 3 PIN 1 PIN 3 TO-220AB (MBR3045CT) HEATSINK K K DESCRIPTION The MBR3045CT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. 1 2 PIN 1 PIN 2 TO-263AB (MBRH3045CT) APPLICATIONS Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. PRODUCT SUMMARY MECHANICAL DATA l F(AV) Case: TO-220AB, TO-263AB Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum 15A x 2 VR 45V V F at l F 0.57V l RM max . 100mA at 125°C T J max. 150°C Diode variation Dual dice, Common cathode E AS 10 mJ MAJOR RATINGS AND CHARACTERISTICS VALUE UNIT 15 x 2 A 45 V t p = 5 μs sine 1020 A VF 15 A pk , T J = 125°C 0.57 V TJ Range -65 to 150 °C SYMBOL l F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM www.nellsemi.com Page 1of 5 MBR3045CT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors VOLTAGE RATINGS SYMBOL PARAMETER Maximum DC reverse voltage VALUE UNIT 45 V VR Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per device per diode Peak repetitive forward current per leg Non-repetitive peak surge current VALUE TEST CONDITIONS UNIT 30 l F(AV) T C = 123°C, rated V R A 15 l FRM l FSM Rated V R , square wave, 20KHz, T C = 123C° 30 Following any rated load 5 μs sine or 3 μs rect.pulse condition and with rated V RRM applied A 1020 A Surge applied at rated load condition half wave single phase 60 Hz 200 Non-repetitive avalanche energy E AS T J = 25°C, l AS = 2.0A, L = 5mH Repetitive avalanche current l AR Current decaying linearly to zero in 1 μs Frequency limited by T J maximum V A = 1.5 x V R typical 10 mJ 2 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS I F = 15A I F = 30A Maximum forward voltage drop VALUE UNIT 0.65 T J = 25°C 0.8 V FM (1) V I F = 15A 0.57 T J = 125°C I F = 30A Maximum instantaneous reverse current l RM (1) 0.7 T J = 25°C 1 Rated DC voltage 100 650 pF 8 nH 10000 V/µs Maximum junction capacitance CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance LS Measured from top of terminal to mounting plane Maximum voltage rate of change dV/dt Rated V R Note (1) Pulse width < 300 µs, duty cycle < 2% www.nellsemi.com mA T J = 125°C Page 2 of 5 MBR3045CT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER VALUE TEST CONDITIONS MBR UNIT MBRH Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range T stg -65 to 175 °C Maximum thermal resistance, junction to case R thJC DC operation R thCS Mounting surface, smooth and greased 1.5 1.5 °C/W Typical thermal resistance, case to heatsink 0.5 0.5 2 1.4 g 0.07 0.05 oz. minimum 6 (5) - maximum 12 (10) - kgf . cm (lbf . in) Approximate weight Mounting torque Ordering Information Table Device code MBR H 30 45 CT 1 2 3 4 5 1 - Schottky MBR series 2 - Package outline "none" for TO-220AB "H" for TO-263AB (D 2 PAK) 3 - Current rating (30 = 30A, 15A x 2) 4 - Voltage ratings, 45 =45V 5 - Circuit configuration, Center tap common cathode, TO-220 series package Fig.2 Typical values of reverse current vs. reverse voltage (Per Leg) 100 1000 Reverse current, l R (mA) lnstantaneous forward current, I F (A) Fig.1 Maximum forward voltage drop characteristics (Per Leg) 10 T J =150° T J =125° T J =25° 1 0 0.3 0.6 0.9 1.2 Forward voltage drop, V FM (V) www.nellsemi.com T J =125° 10 T J =100° T J =75° 1 T J =50° 0.1 T J =25° 0.01 0.001 0 1.5 T J =150° 100 10 20 30 40 Reverse voltage, V R (V) Page 3 of 5 50 MBR3045CT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Fig.3 Typical junction capacitance vs. reverse voltage (Per Leg) Fig.4 Maximum allowable case temperature vs. average forward current (Per Leg) T J =25° 100 0 10 20 30 150 Allowable case temperature ( ° C) Junction capacitance, C T (pF) 1000 40 140 DC 130 Square wave (D = 0.50) Rated V R applied 120 110 See note (1) 100 50 5 0 10 15 20 25 Average forward current, l F(AV) (A) Reverse voltage, V R (V) Fig.5 Maximum thermal impedance R th(j-c) characteristics (Per Leg) Thermal lmpedance, R th(j-c) (°C/W) 10 1 P DM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 Notes: Single pulse (thermal resistance) 0.01 0.00001 0.0001 . 1. Duty Factor D =t 1 /t 2 2.Peak T J = PDM x R th(j-c) +T C 0.001 0.01 0.1 10 1 100 Rectangular pulse duration, t 1 (s) Fig.7 Maximum non-repetitive surge current (Per Leg) Non-repetitive surge current, l FSM (A) Fig.6 Forward power loss characteristics (Per Leg) Average power loss (W) 15 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 12 9 RMS limit 6 DC 3 0 0 2 10 15 20 25 Average forward current, l F(AV) (A) At any rated load condition and with rated V RRM applied following surge 100 10 100 1000 Square wave pulse duration, t p ( µ s) Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6); Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R www.nellsemi.com 1000 Page 4of 5 10000 MBR3045CT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors TO-220AB(MBR3045CT) 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) CASE PIN 2 All dimensions in millimeters (inches) PIN 1 PIN 3 TO-263AB(MBRH3045CT) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 1.40 (0.055) 1.14 (0.045) 6.22 (0.245) 1.40 (0.055) 1.19 (0.047) 9.14 (0.360) 8.13 (0.320) 2 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) 2.79 (0.110) HEATSINK K All dimensions in millimeters (inches) www.nellsemi.com Page 5of 5 PIN 1 PIN 2